SEMICONDUCTOR PACKAGING WITH HIGH DENSITY INTERCONNECTS
    15.
    发明申请
    SEMICONDUCTOR PACKAGING WITH HIGH DENSITY INTERCONNECTS 审中-公开
    半导体封装具有高密度互连

    公开(公告)号:WO2018063351A1

    公开(公告)日:2018-04-05

    申请号:PCT/US2016/054856

    申请日:2016-09-30

    Abstract: Various embodiments disclosed relate to a semiconductor package. The present semiconductor package includes a substrate. The substrate is formed from alternating conducting layers and dielectric layers. A first active electronic component is disposed on an external surface of the substrate, and a second active electronic component is at least partially embedded within the substrate. A first interconnect region is formed from a plurality of interconnects between the first active electronic component and the second active electronic component. Between the first active electronic component and the substrate a second interconnect region is formed from a plurality of interconnects. Additionally, a third interconnect region is formed from a plurality of interconnects between the second active electronic component and the substrate.

    Abstract translation: 所公开的各种实施例涉及一种半导体封装。 本发明的半导体封装包括衬底。 衬底由交替的导电层和电介质层形成。 第一有源电子部件设置在基板的外表面上,并且第二有源电子部件至少部分地嵌入在基板内。 第一互连区域由第一有源电子部件和第二有源电子部件之间的多个互连形成。 在第一有源电子元件和衬底之间,第二互连区域由多个互连形成。 另外,第三互连区域由第二有源电子部件和衬底之间的多个互连形成。

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