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21.
公开(公告)号:WO2022268434A1
公开(公告)日:2022-12-29
申请号:PCT/EP2022/064507
申请日:2022-05-29
Applicant: ASML NETHERLANDS B.V.
Inventor: HUANG, Jiao , WANG, Jinze , YAN, Yan , FAN, Yongfa , LIU, Liang , FENG, Mu
IPC: G03F7/20 , G03F7/70441 , G03F7/705 , G03F7/70625
Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model comprises a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.
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公开(公告)号:WO2022268433A1
公开(公告)日:2022-12-29
申请号:PCT/EP2022/064473
申请日:2022-05-27
Applicant: ASML NETHERLANDS B.V.
Inventor: SHAYEGAN SALEK, Mir Farrokh , KERSTEN, Robert, Renier , GUTIERREZ SAN SIMON, Jorge , ENGWERDA, Heiko, Jacob, Anthonius
IPC: G03F7/20 , H01L21/687 , G03F7/705 , G03F7/707 , H01L21/6875
Abstract: Described are embodiments for predicting a physical condition of a burl of an object holder of a lithographic apparatus. Images of the burls are provided as an input to a machine learning (ML) model to generate a prediction of a physical condition of the burls. Various ML models may be used to generate the prediction. A first ML model generates the prediction using a first type of burl data, e.g., high resolution images of a burl. A second ML model generates the prediction using a second type of burl data, e.g., a subset of the high resolution images of a burl or a low resolution image of the burls. A third ML model generates the prediction using a third type of burl data, e.g., surface descriptive parameters of a burl that are indicative of properties of a surface of the object holder.
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公开(公告)号:WO2022268413A1
公开(公告)日:2022-12-29
申请号:PCT/EP2022/063380
申请日:2022-05-18
Applicant: ASML NETHERLANDS B.V.
Inventor: KAPADIA, Rahul, Sunil , ROLLINGER, Bob , LUKENS, Joshua, Mark , VASCHENKO, Georgiy, Olegovich , GANNA, Sreedhar
Abstract: Disclosed is a capillary retention system including a pressure-energized ferrule which is double-sealing and configured and arranged so that internal target material pressure acts to increase the sealing pressure. According to another aspect of an embodiment the pressure-energized ferrule is configured and arranged so that sealing contact pressure on the capillary is closer to the capillary free face making 5 up the nozzle outlet and thus reduces the capillary free length in turn increasing the bending mode of the capillary, thereby making it less likely to be excited by system vibrations.
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公开(公告)号:WO2022263312A1
公开(公告)日:2022-12-22
申请号:PCT/EP2022/065811
申请日:2022-06-10
Applicant: ASML NETHERLANDS B.V.
Inventor: TAO, Jun , CAO, Yu , SPENCE, Christopher, Alan
Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to- sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.
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25.
公开(公告)号:WO2022263153A1
公开(公告)日:2022-12-22
申请号:PCT/EP2022/064577
申请日:2022-05-30
Inventor: ZHANG, Shun , LA FONTAINE, Bruno , FAN, Zheng , YIN, Gao Xing , LU, He Sheng , ZHAO, Zhenfeng
IPC: H01J37/24 , H01J37/065
Abstract: Apparatuses, systems, and methods for adjusting beam current using a feedback loop are provided. In some embodiments, a system 104 may include a first anode aperture 120b configured to measure a current of an emitted beam 161 during inspection of a sample 170, wherein the first anode aperture is positioned in an environment that is configured to support a vacuum pressure of less than 3 x10-10 torr and a controller including circuitry configured to cause the system to perform: generating a feedback signal when a difference between the measured current and a setpoint current exceeds a threshold value and adjusting a voltage of an extractor voltage supply 312 based on the feedback signal during inspection of the sample such that a difference between an adjusted current of the emitted beam and the setpoint current is below the threshold value.
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公开(公告)号:WO2022258391A2
公开(公告)日:2022-12-15
申请号:PCT/EP2022/064365
申请日:2022-05-26
Applicant: ASML NETHERLANDS B.V.
Inventor: DRIESSEN, Theodorus, Wilhelmus , ROLLINGER, Bob , TREES, Dietmar, Uwe, Herbert , LUKENS, Joshua, Mark , VASCHENKO, Georgiy, Olegovich , BUIS, Edwin, Johan
IPC: H05G2/00 , B05B5/035 , B01L3/02 , B05B1/086 , B05B17/063 , B05B17/0661 , B05B17/0669 , H05G2/006
Abstract: A system includes: a conduit including an orifice configured to fluidly couple to a reservoir and to emit molten target material; an actuator including at least a first zone and a second zone that is between the first zone and the orifice, where motion of the first zone and the second zone is transferred to an interior of the conduit; and a controller configured to apply a first actuation signal to the first zone and a second actuation signal to the second zone. The second actuation signal has a higher frequency than the first actuation signal.
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公开(公告)号:WO2022258371A1
公开(公告)日:2022-12-15
申请号:PCT/EP2022/064102
申请日:2022-05-24
Applicant: ASML NETHERLANDS B.V.
Inventor: CHENG, Rui , ADAMS, Joshua , BIJNEN, Franciscus, Godefridus, Casper , CATEY, Eric, Brian , AARTS, Igor, Matheus, Petronella
IPC: G03F9/00
Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.
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公开(公告)号:WO2022258279A1
公开(公告)日:2022-12-15
申请号:PCT/EP2022/062579
申请日:2022-05-10
Applicant: ASML NETHERLANDS B.V.
Inventor: WIELAND, Marco, Jan-Jaco
IPC: H01J37/12
Abstract: Assessment systems and methods are disclosed. In one arrangement, an effect of electrode distortion in an objective lens array is compensated. An electrode distortion is adjusted by varying an electrostatic field in the objective lens array. The adjustment is such as to compensate for an effect of electrode distortion on sub-beams of a multi-beam impinging on a sample. A sub-beam is refocused in response to the variation in electrostatic field in the objective lens array. The adjusting and the refocusing comprises changing potentials applied to at least two electrodes of the objective lens array.
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公开(公告)号:WO2022248129A1
公开(公告)日:2022-12-01
申请号:PCT/EP2022/060688
申请日:2022-04-22
Applicant: STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN , UNIVERSITEIT VAN AMSTERDAM , NIPPON SHOKUBAI CO., LTD. , ASML NETHERLANDS B.V. , STICHTING VU
IPC: G03F7/004
Abstract: A resist composition for use in the fabrication of integrated circuits, the use of a resist composition, and a lithographic method utilising a resist composition, wherein the resist composition comprises an alkyltin-oxo cage having a counterion selected from tetrakis(pentafluorophenyl) borate, tetrakis[3,5-bis(trifluoromethyl)phenyl]borate, tetrakis[3,5-bis(tert-butyl)phenyl]borate, and tetrakis[(3,5-bis(l,l,l,3,3,3-hexafluoro-2-methoxypropan-2-yl)phenyl)phenyl]borate. A lithographic method comprising the steps of: a) providing a resist composition comprising an alkyltin-oxo cage having a counterion selected from the above borate groups; b) exposing the resist composition to a patterned radiation beam or an electron beam to form a pattern in the resist composition; and c) developing the resist to form a circuit pattern.
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公开(公告)号:WO2022243006A1
公开(公告)日:2022-11-24
申请号:PCT/EP2022/061382
申请日:2022-04-28
Applicant: ASML NETHERLANDS B.V.
Inventor: URONE, Dustin, Michael , THERIAULT, Gregory , NGUYEN, Lam , MCKENZIE, Paul, Alexander
Abstract: A metrology system includes: a light apparatus, a detection apparatus, and a control apparatus in communication with the detection apparatus. The light apparatus is configured to generate an optical probe propagating along a probe optical axis that intersects a target axial path at a probe region, the target axial path extending primarily along an X axis of an X, Y, Z coordinate system. The detection apparatus is configured to detect produced light at a plurality of distinct wavelengths, each wavelength associated with a distinct location along an X-transverse axis of the X, Y, Z coordinate system, the produced light being produced from an interaction in the probe region between the optical probe and a target traveling along the target axial path. The control apparatus is configured to analyze the detected light and determine position information relating to the target along the X-transverse axis of the X, Y, Z coordinate system.
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