公开(公告)号：WO2022182994A1

公开(公告)日：2022-09-01

申请号：PCT/US2022/017912

申请日：2022-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： LAKSHMANAN, Annamalai ,  WRENCH, Jacqueline S. ,  WANG, Feihu ,  YANG, Yixiong ,  LEE, Joung Joo ,  GANDIKOTA, Srinivas

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C14/34

Abstract: Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

公开(公告)号：WO2014194199A1

公开(公告)日：2014-12-04

申请号：PCT/US2014/040239

申请日：2014-05-30

Applicant: APPLIED MATERIALS, INC. ,  MA, Paul, F. ,  TSENG, Jennifer, Meng ,  CHANG, Mei ,  LAKSHMANAN, Annamalai ,  TANG, Jing

Inventor： MA, Paul, F. ,  TSENG, Jennifer, Meng ,  CHANG, Mei ,  LAKSHMANAN, Annamalai ,  TANG, Jing

IPC: H01L21/318 ,  H01L21/205 ,  H01L21/203

CPC classification number: H01L21/321 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.

Abstract translation: 描述了形成半导体器件的方法。 某些方法包括在电介质上沉积包含氮化锰的膜; 在该膜上沉积铜种子层; 以及在铜种子层上沉积铜填充层。 还描述了半导体器件。 某些半导体器件包括低k电介质层; 覆盖低k电介质层的氮化锰层; 选自铜籽晶层或覆盖氮化锰层的电化学沉积种子层的晶种层; 覆铜层的铜层。

公开(公告)号：WO2013116495A1

公开(公告)日：2013-08-08

申请号：PCT/US2013/024107

申请日：2013-01-31

Applicant: APPLIED MATERIALS, INC. ,  MA, Paul F. ,  LIU, Guojun ,  LAKSHMANAN, Annamalai ,  WU, Dien-Yeh ,  SUBRAMANI, Anantha K.

Inventor： MA, Paul F. ,  LIU, Guojun ,  LAKSHMANAN, Annamalai ,  WU, Dien-Yeh ,  SUBRAMANI, Anantha K.

IPC: C23C16/50 ,  C23C16/448 ,  C23C16/455

CPC classification number: H01L21/76838 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76862

Abstract: Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

Abstract translation: 提供了使用CVD和ALD技术沉积金属层，更具体地TaN层的方法。 在一个或多个实施例中，该方法包括将衬底顺序地暴露于金属前体，或更具体地钽前体，接着是高频等离子体。

公开(公告)号：WO2013082370A1

公开(公告)日：2013-06-06

申请号：PCT/US2012/067212

申请日：2012-11-30

Applicant: APPLIED MATERIALS, INC. ,  LAKSHMANAN, Annamalai ,  MA, Paul F. ,  CHANG, Mei ,  SHAN, Jennifer

Inventor： LAKSHMANAN, Annamalai ,  MA, Paul F. ,  CHANG, Mei ,  SHAN, Jennifer

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/318

CPC classification number: H01L21/76843 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.

Abstract translation: 描述的是掺杂的TaN膜，以及用于提供掺杂的TaN膜的方法。 具有Ru，Cu，Co，Mn，Al，Mg，Cr，Nb，Ti和/或V的掺杂TaN膜允许增强TaN膜的铜阻挡性能。 还描述了提供具有包含掺杂TaN的第一层和包含Ru和Co中的一种或多种的第二层的膜的方法，并且可选地掺杂第二层。

公开(公告)号：WO2016111832A1

公开(公告)日：2016-07-14

申请号：PCT/US2015/066808

申请日：2015-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： MEBARKI, Bencherki ,  LAKSHMANAN, Annamalai ,  SINGH, Kaushal K. ,  MA, Paul F. ,  NAIK, Mehul B. ,  COCKBURN, Andrew ,  GODET, Ludovic

IPC: H01L21/441

CPC classification number: H01L21/76886 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/32053 ,  H01L21/76877 ,  H01L23/53257 ,  H01L23/53271 ,  H01L2221/1094

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.

Abstract translation: 提供了用于形成用于半导体应用的后端互连结构的纳米线的金属硅化物的方法和装置。 在一个实施例中，该方法包括通过化学气相沉积工艺或物理气相沉积工艺在衬底上形成包含多个金属硅化物层的金属硅化物堆叠，在处理室中热处理金属硅化物堆叠，施加微波功率 在处理室中，同时热处理金属硅化物层; 并且在对金属硅化物层进行热处理的同时保持低于400摄氏度的衬底温度。

公开(公告)号：WO2011149615A2

公开(公告)日：2011-12-01

申请号：PCT/US2011/034091

申请日：2011-04-27

Applicant: APPLIED MATERIALS, INC. ,  LAKSHMANAN, Annamalai ,  TRAN, Truc T. ,  LY, Nhon ,  VOSKOBOYNIK, Izidor ,  HO, Dustin W. ,  TANAKA, Tsutomu

Inventor： LAKSHMANAN, Annamalai ,  TRAN, Truc T. ,  LY, Nhon ,  VOSKOBOYNIK, Izidor ,  HO, Dustin W. ,  TANAKA, Tsutomu

IPC: C23C16/44 ,  C23C16/455 ,  H01L31/18

CPC classification number: C23C16/24 ,  C23C16/453 ,  C23C16/45565 ,  C23C16/45587 ,  C23C16/505 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method and apparatus for producing thin films for photovoltaic (PV) devices is described. In one embodiment, an apparatus for depositing thin films on a substrate is described. The apparatus includes a chamber having a showerhead disposed in an opposing relationship to a substrate support, and at least a first gas source and a second gas source in fluid communication with a plurality of discrete reaction zones of the showerhead, the reaction zones comprising a first reaction zone contained in a space between a first side of the showerhead and the substrate support, the first reaction zone in electrical communication with a RF power supply, and a second reaction zone contained within an opposing second side of the showerhead, the second reaction zone being electrically isolated from the first reaction zone.

Abstract translation: 描述了用于制造光伏（PV）装置薄膜的方法和装置。 在一个实施例中，描述了用于在衬底上沉积薄膜的装置。 该装置包括具有以与衬底支撑件相对的关系设置的喷头以及至少与喷头的多个离散反应区流体连通的第一气体源和第二气体源的室，所述反应区包括第一 所述反应区包含在所述喷头的第一侧和所述基板支撑件之间的空间中，所述第一反应区与RF电源电连通，所述第二反应区包含在所述喷头的相对的第二侧内，所述第二反应区 与第一反应区电隔离。

公开(公告)号：WO2008091900A1

公开(公告)日：2008-07-31

申请号：PCT/US2008/051715

申请日：2008-01-22

Applicant: APPLIED MATERIALS, INC. ,  NOORI, Atif ,  SCHMITT, Francimar ,  LAKSHMANAN, Annamalai ,  KIM, Bok Hoen ,  ARGHAVANI, Reza

Inventor： NOORI, Atif ,  SCHMITT, Francimar ,  LAKSHMANAN, Annamalai ,  KIM, Bok Hoen ,  ARGHAVANI, Reza

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/7682 ,  H01L21/76885 ,  H01L2221/1036

Abstract: Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a sacrificial material between the respective conductive elements, depositing a porous layer over the conductive elements and the sacrificial material, and then stripping the sacrificial material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The sacrificial material may be, for example, a polymerized alpha terpinene layer, the porous layer may be, for example, a porous carbon doped oxide layer, and the stripping process may utilize a UV based curing process, for example.

Abstract translation: 本发明的实施例通常提供了在半导体器件的导电元件之间形成空气间隙的方法，其中气隙的介电常数约为1.气隙通常可以通过在相应的导电元件之间沉积牺牲材料而形成 在导电元件和牺牲材料之上沉积多孔层，然后通过多孔层将牺牲材料从相应的导电元件之间的空间中剥离，该多孔层留下各导电元件之间的气隙。 牺牲材料可以是例如聚合的α萜品烯层，多孔层可以是例如多孔碳掺杂的氧化物层，并且剥离过程可以使用例如基于UV的固化方法。

公开(公告)号：WO2008024566A2

公开(公告)日：2008-02-28

申请号：PCT/US2007/073360

申请日：2007-07-12

Applicant: APPLIED MATERIALS, INC. ,  LAKSHMANAN, Annamalai ,  NGUYEN, Vu Nt ,  PARK, Sohyun ,  BALASUBRAMANIAN, Ganesh ,  REITER, Steven ,  KIYOHARA, Tsutomu ,  SCHMITT, Francimar ,  KIM, Bok Hoen

Inventor： LAKSHMANAN, Annamalai ,  NGUYEN, Vu Nt ,  PARK, Sohyun ,  BALASUBRAMANIAN, Ganesh ,  REITER, Steven ,  KIYOHARA, Tsutomu ,  SCHMITT, Francimar ,  KIM, Bok Hoen

IPC: H01L21/473

CPC classification number: C23C16/4404 ,  C23C16/0245 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3148 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185

Abstract: The present invention generally provides an apparatus and method for reducing defects on films deposited on semiconductor substrates. One embodiment of the present invention provides a method for depositing a film on a substrate. The method comprises treating the substrate with a first plasma configured to reduce pre-existing defects on the substrate, and depositing a film comprising silicon and carbon on the substrate by applying a second plasma generated from at least one precursor and at least one reactant gas.

Abstract translation: 本发明通常提供一种用于减少沉积在半导体衬底上的薄膜上的缺陷的装置和方法。 本发明的一个实施方案提供了一种在基材上沉积膜的方法。 该方法包括用配置成减少衬底上预先存在的缺陷的第一等离子体处理衬底，以及通过施加由至少一种前体和至少一种反应气体产生的第二等离子体将包含硅和碳的膜沉积在衬底上。

公开(公告)号：WO2004066365A2

公开(公告)日：2004-08-05

申请号：PCT/US2004/000628

申请日：2004-01-12

Applicant: APPLIED MATERIALS, INC.

Inventor： LAKSHMANAN, Annamalai ,  LEE, Ju-Hyung ,  KIM, Troy ,  ZHAO, Maosheng ,  VENKATARAMAN, Shankar

IPC: H01L

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated from a carbon and fluorine-containing gas and an oxygen source.

Abstract translation: 提供一种用于清洁处理室的方法和装置。 清洁方法包括使用远程等离子体源来产生反应物种和原位RF功率以产生或再生反应性物质。 活性物质由碳和含氟气体和氧源产生。

公开(公告)号：WO2022265734A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/028451

申请日：2022-05-10

Applicant: APPLIED MATERIALS, INC.

Inventor： LAKSHMANAN, Annamalai ,  WRENCH, Jacqueline S. ,  WANG, Feihu ,  YANG, Yixiong ,  LEE, Joung Joo ,  GANDIKOTA, Srinivas ,  KIM, Sang-heum ,  CHEN, Zhebo ,  SHEN, Gang

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.