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    OCTAGON TRANSFER CHAMBER
    1.
    发明申请
    OCTAGON TRANSFER CHAMBER 审中-公开
    十字架转移室

    公开(公告)号：WO2008014136A3

    公开(公告)日：2008-09-25

    申请号：PCT/US2007073521

    申请日：2007-07-13

    Applicant: APPLIED MATERIALS INC ,  WHITE JOHN M ,  TAKEHARA TAKAKO

    Inventor： WHITE JOHN M ,  TAKEHARA TAKAKO

    IPC: H01L21/677

    CPC classification number: H01L21/67196 ,  H01L21/67742

    Abstract: A method and apparatus for processing substrates in a cluster tool is disclosed. The transfer chambers of the cluster tool have eight locations to which additional chambers (i.e., load lock, buffer, and processing chambers) may attach. The transfer chamber may be formed of three separate portions. The central portion may be a rectangular shaped portion. The two other portions may be trapezoidal shaped portions. The trapezoidal shaped portions each have three slots through which the substrate can move for processing. The central portion of the transfer chamber may have a removable lid that allows a technician to easily access the transfer chamber.

    Abstract translation: 公开了一种用于在集群工具中处理衬底的方法和装置。 集群工具的传送室具有八个位置，附加的室（即，装载锁定，缓冲器和处理室）可附接到该位置。 传送室可以由三个分开的部分形成。 中心部分可以是矩形部分。 另外两个部分可以是梯形形状的部分。 梯形形状部分每个具有三个狭缝，基板可以通过三个槽移动以用于处理。 传送室的中心部分可以具有可移除的盖，其允许技术人员容易地接近传送室。

    ROLL TO ROLL OLED PRODUCTION SYSTEM
    2.
    发明申请
    ROLL TO ROLL OLED PRODUCTION SYSTEM 审中-公开
    滚动OLED生产系统

    公开(公告)号：WO2009134697A3

    公开(公告)日：2010-03-04

    申请号：PCT/US2009041709

    申请日：2009-04-24

    Applicant: APPLIED MATERIALS INC ,  WHITE JOHN M ,  TAKEHARA TAKAKO

    Inventor： WHITE JOHN M ,  TAKEHARA TAKAKO

    IPC: H01L51/56 ,  H01L51/52 ,  H05B33/10

    CPC classification number: H01L51/56

    Abstract: The present invention generally relates to a method and an apparatus for processing one or more substrates on a roll to roll system. The one or more substrates may pass through several processing chambers to deposit the layers necessary to produce an OLED structure. The processing chambers may include ink jetting chambers, chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, and annealing chambers. Additional chambers may also be present.

    Abstract translation: 本发明一般涉及一种用于在卷对卷系统上处理一个或多个基板的方法和装置。 一个或多个衬底可以通过几个处理室以沉积产生OLED结构所必需的层。 处理室可以包括喷墨室，化学气相沉积（CVD）室，物理气相沉积（PVD）室和退火室。 还可以存在附加的室。

    LOW TEMPERATURE PROCESS FOR TFT FABRICATION
    4.
    发明申请
    LOW TEMPERATURE PROCESS FOR TFT FABRICATION 审中-公开
    TFT制造的低温工艺

    公开(公告)号：WO2004112104A3

    公开(公告)日：2005-03-17

    申请号：PCT/US2004017236

    申请日：2004-06-01

    Applicant: APPLIED MATERIALS INC ,  HSIAO MARK ,  YIM DONG-KIL ,  TAKEHARA TAKAKO ,  SHANG QUANYUAN ,  HARSHBARGER WILLIAM R ,  KIM WOONG-KWON ,  YUN DUK-CHUL ,  CHANG YOU-GYUNG

    Inventor： HSIAO MARK ,  YIM DONG-KIL ,  TAKEHARA TAKAKO ,  SHANG QUANYUAN ,  HARSHBARGER WILLIAM R ,  KIM WOONG-KWON ,  YUN DUK-CHUL ,  CHANG YOU-GYUNG

    IPC: H01L21/336 ,  H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/66765 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678

    Abstract: Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300 °C or less.

    Abstract translation: 制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。 衬底可以是绝缘衬底或滤色器。 在第一种方法中，栅极金属经受H 2等离子体。 在使栅极金属进入H 2等离子体之后，栅极绝缘膜沉积在栅极上。 在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。 在H2或氩稀释条件下沉积一层，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的总体压应力。 在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n +硅膜。

    LOW TEMPERATURE PROCESS FOR PASSIVATION APPLICATIONS
    7.
    发明申请
    LOW TEMPERATURE PROCESS FOR PASSIVATION APPLICATIONS 审中-公开
    钝化应用的低温过程

    公开(公告)号：WO2004054010A3

    公开(公告)日：2004-11-18

    申请号：PCT/US0339385

    申请日：2003-12-10

    Applicant: APPLIED MATERIALS INC

    Inventor： HSIAO MARK ,  TAKEHARA TAKAKO ,  SHANG QUANYUAN ,  HARSHBARGER WILLIAM R

    IPC: H01L51/52 ,  H01L51/20

    CPC classification number: H01L51/5253

    Abstract: An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.

    Abstract translation: 一种有机电致发光器件，包括衬底上的阳极层，阳极层上的有机层和有机层上的阴极层。 在一个实施例中，阴极层在阴极上沉积保护层之前经受H 2等离子体。 在另一个实施方案中，有机电致发光器件用阴极层上的内部封装层和内部封装层上的外部封装层封装。 内层针对粘附到阴极层而进行了优化。

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