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公开(公告)号：WO2017089610A1
公开(公告)日：2017-06-01
申请号：PCT/EP2016/079008
申请日：2016-11-28
发明人： WALTER, Andreas , SUCHENTRUNK, Christof , BECK, Thomas , STEINBERGER, Gerhard , BERA, Holger , BRUNNER, Heiko , FROESE, Bernd
IPC分类号： C23C18/44 , H01L21/288 , H05K3/24
CPC分类号： H05K3/187 , C23C18/1651 , C23C18/1683 , C23C18/32 , C23C18/44 , H01L21/288 , H05K3/244
摘要： The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and an unsaturated compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the unsaturated compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The unsaturated compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.
摘要翻译： 本发明涉及一种水性镀浴组合物和通过无电镀在基材上沉积钯层的方法。 根据本发明的含水镀浴组合物包含钯离子源，钯离子还原剂和不饱和化合物。 根据本发明的水性镀浴组合物具有改进的稳定性，以防止由于不饱和化合物引起的不希望的分解，同时将钯的沉积速率保持在期望的满意值。 含水电镀液组合物也具有延长的使用寿命。 本发明的不饱和化合物允许将沉积速率调节至浴寿命期间的满意范围，并且用于在较低温度下无电沉积钯层。
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2.发明申请METHOD FOR MANUFACTURE OF WIRE BONDABLE AND SOLDERABLE SURFACES ON NOBLE METAL ELECTRODES 审中-公开在金属电极上制造电线和可焊接表面的方法
公开(公告)号：WO2014086567A2
公开(公告)日：2014-06-12
申请号：PCT/EP2013/073841
申请日：2013-11-14
发明人： WALTER, Andreas
CPC分类号： H01L33/62 , C23C18/1651 , C23C18/1844 , C23C18/44 , C23C18/54 , H01L33/005 , H01L33/40 , H01L2224/03424 , H01L2224/03464 , H01L2224/05164 , H01L2224/27464 , H01L2224/27823 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a method for manufacture of wire bondable and solderable surfaces on noble metal electrodes. The noble metal electrodes are activated by depositing a seed layer of palladium or a palladium alloy layer by electroless plating at 60 to 90 °C. Next, an intermediate layer is deposited onto the seed layer followed by deposition of the wire bondable and/or solderable surface finish layer(s) onto the intermediate layer. This method is particularly suitable in the production of optoelectronic devices such as light emitting diodes (LEDs).
摘要翻译： 本发明涉及一种在贵金属电极上制造可焊接和可焊接表面的方法。 贵金属电极通过在60〜90℃下进行化学镀来沉积钯或钯合金层的种子层而被活化。 接下来，将中间层沉积到种子层上，然后将可焊接的和/或可焊接的表面处理层沉积到中间层上。 该方法特别适用于制造诸如发光二极管（LED）的光电器件。
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公开(公告)号：WO2017089608A1
公开(公告)日：2017-06-01
申请号：PCT/EP2016/079002
申请日：2016-11-28
发明人： WALTER, Andreas , SUCHENTRUNK, Christof , BECK, Thomas , STEINBERGER, Gerhard , BERA, Holger , BRUNNER, Heiko , RÜCKBROD, Sven
IPC分类号： C23C18/44 , H01L21/288 , H05K3/24
CPC分类号： C23C18/44 , C23C18/1844 , H01L21/288 , H05K3/187 , H05K3/243
摘要： The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and a cyanide group containing aromatic compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the cyanide group containing aromatic compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The cyanide group containing aromatic compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.
摘要翻译： 本发明涉及一种水性镀浴组合物和通过无电镀在基材上沉积钯层的方法。 根据本发明的水性镀浴组合物包含钯离子源，钯离子还原剂和含氰基的芳族化合物。 根据本发明的水性镀浴组合物具有改进的稳定性，以防止由于含氰化物基团的芳族化合物引起的不希望的分解，同时将钯的沉积速率保持在期望的满意值。 含水电镀液组合物也具有延长的使用寿命。 本发明的含氰基芳族化合物允许将沉积速率调节至浴寿命期间的满意范围并且用于在较低温度下无电沉积钯层。
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4.发明申请METHOD FOR DIRECTLY DEPOSITING PALLADIUM ONTO A NON-ACTIVATED SURFACE OF A GALLIUM NITRIDE SEMICONDUCTOR 审中-公开将钯直接沉积在氮化镓半导体的非活化表面上的方法
公开(公告)号：WO2018036951A1
公开(公告)日：2018-03-01
申请号：PCT/EP2017/071003
申请日：2017-08-21
发明人： WALTER, Andreas
IPC分类号： C23C18/16 , C23C18/44 , H01L29/872 , H01L33/00 , H01L33/32
摘要： The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.
摘要翻译： 本发明涉及一种用于将钯直接沉积到氮化镓半导体的未活化表面上的方法，使用酸性镀钯浴（如下所定义）直接沉积金属钯或 在掺杂或未掺杂的氮化镓半导体的未活化表面上涂覆钯合金，以及涂覆钯或钯合金的掺杂或未掺杂氮化镓半导体。
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公开(公告)号：WO2016097083A3
公开(公告)日：2016-06-23
申请号：PCT/EP2015/080136
申请日：2015-12-17
IPC分类号： C23C18/44
摘要： The present invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the present invention comprises a source for palladium ions, a reducing agent for palladium ions and an aromatic compound. The aqueous plating bath composition has an increased deposition rate for palladium while maintaining bath stability. The aqueous plating bath composition has also a prolonged life time. The aromatic compounds of the present invention allow for adjusting the deposition rate to a constant range over the bath life time and for electrolessly depositing palladium layers at lower temperatures. The aromatic compounds of the present invention activate electroless palladium plating baths having a low deposition rate and reactivate aged electroless palladium plating baths.
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公开(公告)号：WO2014044435A1
公开(公告)日：2014-03-27
申请号：PCT/EP2013/065296
申请日：2013-07-19
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L24/14 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03464 , H01L2224/0401 , H01L2224/05568 , H01L2224/05573 , H01L2224/05583 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05681 , H01L2224/10145 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/11821 , H01L2224/11822 , H01L2224/11823 , H01L2224/11825 , H01L2224/11901 , H01L2224/13005 , H01L2224/13013 , H01L2224/13014 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13562 , H01L2224/13565 , H01L2224/13582 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13664 , H01L2224/13669 , H01L2224/13673 , H01L2224/13676 , H01L2224/16507 , H01L2924/00014 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/3841 , H01L2924/01074 , H01L2924/01015 , H01L2924/01005 , H01L2924/01042 , H01L2924/20751 , H01L2924/2076 , H01L2924/0105 , H01L2924/01047 , H01L2224/05552
摘要： The present invention relates to a method for forming a copper pillar on a semi-conducting substrate, the copper pillar having an underbump metallization area comprising a metal less noble than copper and optionally a solder bump on the top portion, and having a layer of a second metal selected from tin, tin alloys, silver, and silver alloys deposited onto the side walls of said copper pillar. A layer of a first metal which is more noble than copper is deposited onto the entire outer surface of the copper pillar prior to deposition of the second metal layer. The layer of a second metal then has at least a reduced number of undesired pin-holes and serves as a protection layer for the underlying copper pillar.
摘要翻译： 本发明涉及一种在半导体基板上形成铜柱的方法，所述铜柱具有底部金属化区域，该底部金属化区域包括比铜更贵的金属，并且可选地在顶部上具有焊料凸块，并且具有 选自沉积在所述铜柱的侧壁上的锡，锡合金，银和银合金的第二金属。 在沉积第二金属层之前，在铜柱的整个外表面上沉积比铜更贵的第一金属层。 然后，第二金属层至少具有减少数量的不期望的针孔，并且用作下面的铜柱的保护层。
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公开(公告)号：WO2016097084A1
公开(公告)日：2016-06-23
申请号：PCT/EP2015/080138
申请日：2015-12-17
IPC分类号： C23C18/44
CPC分类号： C23C18/44 , C23C18/1646 , C23C18/1651
摘要： The present invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the present invention comprises a source for palladium ions, a reducing agent for palladium ions and an aldehyde compound. The aqueous plating bath composition has an increased deposition rate for palladium while maintaining bath stability. The aqueous plating bath composition has also a prolonged life time. The aldehyde compounds of the present invention allow for adjusting the deposition rate to a constant range over the bath life time and for electrolessly depositing palladium layers at lower temperatures. The aldehyde compounds of the present invention activate electroless palladium plating baths having a low deposition rate and reactivate aged electroless palladium plating baths.
摘要翻译： 本发明涉及一种水性电镀浴组合物和一种通过无电镀在基片上沉积钯层的方法。 根据本发明的水性电镀浴组合物包含钯离子源，钯离子还原剂和醛化合物。 含水电镀浴组合物具有增加的钯沉积速率，同时保持浴的稳定性。 电镀浴组合物也具有延长的使用寿命。 本发明的醛化合物允许将沉积速率在浴寿命中调节到一定范围，并且在较低温度下无电沉积钯层。 本发明的醛化合物活化具有低沉积速率的化学镀钯浴并且重新活化老化的化学镀钯浴。
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