公开(公告)号：WO2012167027A2

公开(公告)日：2012-12-06

申请号：PCT/US2012/040388

申请日：2012-06-01

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED ,  WEST, Jeffrey, Alan

Inventor： WEST, Jeffrey, Alan

IPC: H01L21/768 ,  H01L21/60 ,  H01L23/48

CPC classification number: H01L23/538 ,  H01L21/563 ,  H01L23/481 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13673 ,  H01L2224/13681 ,  H01L2224/14181 ,  H01L2224/1613 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81002 ,  H01L2224/81005 ,  H01L2224/81007 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01074

Abstract: A method (100) of protecting through-substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside (101). A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips (102). The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head (104). The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.

Abstract translation: 保护通过（TSV）管芯的通过衬底的接合损伤的方法（100）包括提供包括多个TSV管芯的衬底，所述TSV管芯具有包括有源电路，底部和多个TSV的顶部，所述TSV包括内部金属芯， 从顶部到达突出的TSV尖端，从底部延伸出来（101）。 在TSV管芯的底部上形成保护层，包括在突出的TSV尖端（102）之间和之上。 TSV模具的上下结合到具有工件表面的工件上，并且其底部向上并与接合头（104）接触。 保护层通过防止接合头与突出的TSV尖端直接接触来减少接合过程中的损伤，包括TSV模头的翘曲。

公开(公告)号：WO2014044435A1

公开(公告)日：2014-03-27

申请号：PCT/EP2013/065296

申请日：2013-07-19

Applicant: ATOTECH DEUTSCHLAND GMBH

Inventor： BECK, Thomas ,  STEINBERGER, Gerhard ,  WALTER, Andreas

IPC: H01L21/60 ,  H01L23/485

CPC classification number: H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05583 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/10145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11821 ,  H01L2224/11822 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/16507 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/3841 ,  H01L2924/01074 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01042 ,  H01L2924/20751 ,  H01L2924/2076 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2224/05552

Abstract: The present invention relates to a method for forming a copper pillar on a semi-conducting substrate, the copper pillar having an underbump metallization area comprising a metal less noble than copper and optionally a solder bump on the top portion, and having a layer of a second metal selected from tin, tin alloys, silver, and silver alloys deposited onto the side walls of said copper pillar. A layer of a first metal which is more noble than copper is deposited onto the entire outer surface of the copper pillar prior to deposition of the second metal layer. The layer of a second metal then has at least a reduced number of undesired pin-holes and serves as a protection layer for the underlying copper pillar.

Abstract translation: 本发明涉及一种在半导体基板上形成铜柱的方法，所述铜柱具有底部金属化区域，该底部金属化区域包括比铜更贵的金属，并且可选地在顶部上具有焊料凸块，并且具有 选自沉积在所述铜柱的侧壁上的锡，锡合金，银和银合金的第二金属。 在沉积第二金属层之前，在铜柱的整个外表面上沉积比铜更贵的第一金属层。 然后，第二金属层至少具有减少数量的不期望的针孔，并且用作下面的铜柱的保护层。

公开(公告)号：WO2012167027A3

公开(公告)日：2013-04-25

申请号：PCT/US2012040388

申请日：2012-06-01

Applicant: TEXAS INSTRUMENTS INC ,  TEXAS INSTRUMENTS JAPAN ,  WEST JEFFREY ALAN

Inventor： WEST JEFFREY ALAN

IPC: H01L21/768 ,  H01L21/60 ,  H01L23/48

CPC classification number: H01L23/538 ,  H01L21/563 ,  H01L23/481 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13673 ,  H01L2224/13681 ,  H01L2224/14181 ,  H01L2224/1613 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81002 ,  H01L2224/81005 ,  H01L2224/81007 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01074

Abstract: A method (100) of protecting through-substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside (101). A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips (102). The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head (104). The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.

Abstract translation: 保护通过（TSV）管芯的通过衬底的接合损伤的方法（100）包括提供包括多个TSV管芯的衬底，所述TSV管芯具有包括有源电路，底部和多个TSV的顶部，所述TSV包括内部金属芯， 从顶部到达突出的TSV尖端，从底部延伸出来（101）。 在TSV模头的底部上形成保护层，包括在突出的TSV尖端（102）之间和之上。 TSV模具的上下结合到具有工件表面的工件上，并且其底部向上并与接合头（104）接触。 保护层通过防止接合头与突出的TSV尖端直接接触来减少接合过程中的损伤，包括TSV模头的翘曲。