公开(公告)号：WO2017087336A1

公开(公告)日：2017-05-26

申请号：PCT/US2016/061931

申请日：2016-11-14

Applicant: CAVENDISH KINETICS, INC.

Inventor： VAN KAMPEN, Robertus Petrus ,  KNIPE, Richard L.

IPC: H01H59/00 ,  H01H1/00

CPC classification number: H01H59/0009 ,  H01H2001/0084 ,  H01H2059/0027 ,  H01H2059/0072

Abstract: The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.

Abstract translation: 本公开总体上涉及用于制造可以切换大电功率的MEMS开关的机构。 采用额外的着陆电极，沿着MEMS器件提供增加的电接触，使得当接触电流和热量从MEMS结构接近最热点移除时。

公开(公告)号：WO2016036422A1

公开(公告)日：2016-03-10

申请号：PCT/US2015/027201

申请日：2015-04-23

Applicant: CAVENDISH KINETICS, INC

Inventor： HUFFMAN, James Douglas ,  KHIEU, Cong Quoc ,  VAN KAMPEN, Robertus Petrus ,  SMAYLING, Karl, F. ,  JOSHI, Vikram

IPC: B81C99/00

CPC classification number: B81C99/003 ,  B81B2201/016 ,  B81B2207/015 ,  G01R27/2605 ,  H01G5/16 ,  H01L23/5228 ,  H01L29/93

Abstract: The present invention generally relates to a mechanism for testing a MEMS hysteresis. A power management circuit may be coupled to the electrodes that cause the movable plate that is disposed between the electrodes in a MEMS device to move. The power management circuit may utilize a charge pump, a comparator and a resistor ladder.

Abstract translation: 本发明一般涉及一种用于测试MEMS滞后的机构。 功率管理电路可以耦合到电极，其使得设置在MEMS器件中的电极之间的可移动板移动。 电源管理电路可以使用电荷泵，比较器和电阻梯。

公开(公告)号：WO2010054244A2

公开(公告)日：2010-05-14

申请号：PCT/US2009/063616

申请日：2009-11-06

Applicant: CAVENDISH KINETICS, INC. ,  SMITH, Charles Gordon ,  KNIPE, Richard L. ,  JOSHI, Vikram ,  GADDI, Roberto ,  UNAMUNO, Anartz ,  VAN KAMPEN, Robertus Petrus

Inventor： SMITH, Charles Gordon ,  KNIPE, Richard L. ,  JOSHI, Vikram ,  GADDI, Roberto ,  UNAMUNO, Anartz ,  VAN KAMPEN, Robertus Petrus

IPC: B81C1/00

CPC classification number: B81B7/04 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2207/053 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  H01G5/18 ,  H01G5/40

Abstract: Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.

Abstract translation: 本文公开的实施例通常包括使用大量的小MEMS器件来代替单个更大的MEMS器件或数字可变电容器的功能。 大量较小的MEMS器件具有与较大器件相同的功能，但是由于尺寸较小，因此可以使用互补金属氧化物半导体（CMOS）兼容工艺封装在腔中。 通过大量较小器件的信号平均，允许较小器件阵列的精度等同于较大的器件。 通过考虑使用具有惯性响应的集成模数转换的基于MEMS的加速度计开关阵列来举例说明该过程。 还通过考虑使用MEMS器件结构（其中MEMS器件并行地作为数字可变电容器）来使用该过程。

公开(公告)号：WO2016126517A1

公开(公告)日：2016-08-11

申请号：PCT/US2016/015360

申请日：2016-01-28

Applicant: CAVENDISH KINETICS, INC

Inventor： VAN KAMPEN, Robertus Petrus ,  GADDI, Roberto ,  KNIPE, Richard L.

IPC: H01H59/00 ,  H01H1/00

CPC classification number: H01G4/005 ,  B81B2201/016 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0057 ,  H01H2001/0084

Abstract: The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.

Abstract translation: 本公开通常涉及利用位于DVC的锚定器中的一个或多个MIM电容器和位于RF电极上的欧姆接触器的MEMS DVC。 MIM电容器与欧姆型MEMS器件相结合，确保了通过应用RF功率实现MEMS DVC的稳定电容。

公开(公告)号：WO2014189917A1

公开(公告)日：2014-11-27

申请号：PCT/US2014/038771

申请日：2014-05-20

Applicant: CAVENDISH KINETICS, INC

Inventor： VAN KAMPEN, Robertus Petrus ,  UNAMUNO, Anartz

IPC: H01G5/18

CPC classification number: H01G5/18 ,  B81B7/008 ,  B81B2201/0221 ,  H01H59/0009

Abstract: The present invention generally relates to a method and apparatus for damping a plate electrode or switching element in a MEMS DVC device. A resistor disposed between a waveform controller and the electrodes of the MEMS DVC causes the voltage to increase while capacitance decreases during the time that the plate electrode is moving. Due to the increase in voltage and decrease in capacitance, the electrostatic force that resists the plate electrode movement away from an electrode increases, which in turn dampens the movement of the plate electrode.

Abstract translation: 本发明一般涉及一种用于阻尼MEMS DVC装置中的平板电极或开关元件的方法和装置。 布置在波形控制器和MEMS DVC的电极之间的电阻器在平板电极移动期间电容降低，导致电压增加。 由于电压的增加和电容的减小，抵抗板电极远离电极的静电力增加，这又抑制板电极的运动。

公开(公告)号：WO2013033613A3

公开(公告)日：2013-03-07

申请号：PCT/US2012/053481

申请日：2012-08-31

Applicant: CAVENDISH KINETICS, INC ,  GADDI, Roberto ,  KNIPE, Richard L. ,  VAN KAMPEN, Robertus Petrus ,  UNAMUNO, Anartz

Inventor： GADDI, Roberto ,  KNIPE, Richard L. ,  VAN KAMPEN, Robertus Petrus ,  UNAMUNO, Anartz

IPC: H01G5/18 ,  H01G5/38 ,  H01G5/40 ,  H01H59/00

Abstract: The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.

公开(公告)号：WO2012145485A2

公开(公告)日：2012-10-26

申请号：PCT/US2012/034210

申请日：2012-04-19

Applicant: CAVENDISH KINETICS, INC ,  VAN DEN HOEK, Willibrordus Gerardus Maria ,  VAN KAMPEN, Robertus Petrus ,  KNIPE, Richard L. ,  SMITH, Charles G.

Inventor： VAN DEN HOEK, Willibrordus Gerardus Maria ,  VAN KAMPEN, Robertus Petrus ,  KNIPE, Richard L. ,  SMITH, Charles G.

IPC: B81B7/00

CPC classification number: H01L29/84 ,  B81B3/0059 ,  B81B7/0035 ,  B81B2203/0127 ,  B81C1/00285 ,  B81C1/00293 ,  B81C1/00682

Abstract: The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.

Abstract translation: 本发明一般涉及通过将气体引入到围绕MEMS装置的开关元件的空腔中来降低开关时降低着陆速度来增加MEMS器件寿命的方法。 使用离子注入将气体引入到容纳开关元件的腔附近的空腔中，并且通过通道将气体连接到该空腔，气体可以通过该通道从一个空腔流到另一个空腔。 选择植入能量以植入靠近腔室的内部屋顶和底部的许多原子，使得在退火时，这些原子扩散到空腔中。 气体提供气体阻尼，其降低开关MEMS器件的动能，然后应该具有更长的寿命。

公开(公告)号：WO2015050761A1

公开(公告)日：2015-04-09

申请号：PCT/US2014/057220

申请日：2014-09-24

Applicant: CAVENDISH KINETICS, INC

Inventor： RENAULT, Mickael ,  JOSHI, Vikram ,  VAN KAMPEN, Robertus Petrus ,  MAGUIRE, Thomas L. ,  KNIPE, Richard L.

IPC: H01H59/00 ,  H01G5/16

CPC classification number: H01G5/16 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00166 ,  B81C2201/0104 ,  B81C2201/0109 ,  H01G5/011 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

Abstract translation: 本发明一般涉及一种MEMS器件及其制造方法。 RF电极，因此其上的介电层具有基本上匹配可动板的底表面的接触面积的弯曲的上表面。 因此，可移动板能够与电介质层良好的接触，从而实现良好的电容。

公开(公告)号：WO2015009360A1

公开(公告)日：2015-01-22

申请号：PCT/US2014/040235

申请日：2014-05-30

Applicant: CAVENDISH KINETICS, INC

Inventor： VAN KAMPEN, Robertus Petrus

IPC: B81B3/00 ,  H01G5/16 ,  H01G5/38 ,  H01H59/00

CPC classification number: B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  H01G5/16 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS DVC. The MEMS DVC has an RF electrode and is formed above a CMOS substrate. To reduce noise in the RF signal, a poly-resistor that is connected between a waveform controller and the electrodes of the MEMS element, may be surrounded by an isolated p-well or an isolated n-well. The isolated well is coupled to an RF ground shield that is disposed between the poly-resistor and the MEMS element. Due to the presence of the isolated well that surrounds the poly-resistor, the substrate resistance does not influence the dynamic behavior of each MEMS element in the MEMS DVC and noise in the RF signal is reduced.

Abstract translation: 本发明一般涉及一种MEMS DVC。 MEMS DVC具有RF电极并且形成在CMOS衬底之上。 为了降低RF信号中的噪声，连接在波形控制器和MEMS元件的电极之间的多电阻器可以被隔离的p阱或隔离的n阱包围。 隔离的阱耦合到设置在多电阻器和MEMS元件之间的RF接地屏蔽。 由于存在围绕多电阻器的隔离阱，衬底电阻不影响MEMS DVC中每个MEMS元件的动态特性，并且降低了RF信号中的噪声。

公开(公告)号：WO2014194025A1

公开(公告)日：2014-12-04

申请号：PCT/US2014/039904

申请日：2014-05-29

Applicant: CAVENDISH KINETICS, INC

Inventor： GADDI, Roberto ,  VAN KAMPEN, Robertus Petrus ,  CASTILLOU, Paul Albert

IPC: H01L23/13 ,  H01L23/498 ,  H01L21/60 ,  H05K1/11

CPC classification number: H01L23/13 ,  B81B7/007 ,  H01L21/4846 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10175 ,  H01L2224/131 ,  H01L2224/14131 ,  H01L2224/16238 ,  H01L2224/17104 ,  H01L2224/81024 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/1461 ,  H05K1/0284 ,  H05K1/111 ,  H05K3/185 ,  H05K3/3436 ,  H05K2201/09045 ,  H05K2201/10674 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The present invention generally relates to techniques and structures that permit a CSP RF-MEMS to be assembled without the need for a solder mask. By having a mesa above the substrate, and having the chip soldered to traces on top of the mesa, the traces do not need a solder mask thereover outside of the mesa. If any solder mask is present, the solder mask is present only on top of the mesa and not on the sidewalls of the mesa or on the substrate.

Abstract translation: 本发明一般涉及允许组装CSP RF-MEMS而不需要焊接掩模的技术和结构。 通过在基板上方具有台面，并且将芯片焊接到台面顶部的迹线，迹线不需要在台面外部的焊接掩模。 如果存在任何焊接掩模，则焊料掩模仅存在于台面的顶部而不存在于台面的侧壁上或衬底上。