利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

207 条记录 (耗时 0.019 秒)

    Method and apparatus of pretreatment of an electron gun chamber
    13.
    发明公开
    Method and apparatus of pretreatment of an electron gun chamber 有权
    Verfahren und Vorrichtung zur Vorbehandlung einer Elektronenkanonenkammer

    公开(公告)号：EP2312609A1

    公开(公告)日：2011-04-20

    申请号：EP09172942.6

    申请日：2009-10-13

    申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

    发明人： Adamec, Pavel ,  Liska, Ivo ,  Gluchman, Gennadij ,  Snabl, Milan

    IPC分类号： H01J37/06

    CPC分类号： H01J37/06 ,  H01J2237/022 ,  H01J2237/06316 ,  H01J2237/06341

    摘要： A method of pre-treating an ultra high vacuum charged particle gun chamber (100) by ion stimulated desorption is provided. The method includes generating a plasma (235) for providing a plasma ion source, and applying a negative potential to at least one surface (122,124,128) in the gun chamber, wherein the negative potential is adapted for extracting an ion flux from the plasma ion source to the at least one surface for desorbing contamination particles from the at least one surface by the ion flux impinging on the at least one surface.

    摘要翻译： 提供了一种通过离子刺激解吸预处理超高真空带电粒子枪室（100）的方法。 该方法包括产生用于提供等离子体离子源的等离子体（235），以及向枪室中的至少一个表面（122,124,128）施加负电位，其中负电位适于从等离子体离子源提取离子通量 到达所述至少一个表面，用于通过撞击在所述至少一个表面上的离子通量从所述至少一个表面解吸污染颗粒。

    MULTI-ELECTRON -BEAM LITHOGRAPHY APPARATUS WITH MUTUALLY DIFFERENT BEAM LIMITING APERTURES
    18.
    发明授权
    MULTI-ELECTRON -BEAM LITHOGRAPHY APPARATUS WITH MUTUALLY DIFFERENT BEAM LIMITING APERTURES 有权
    具有不同照射DAZZLE MUCH RAY电子束平版印刷设备

    公开(公告)号：EP1166319B1

    公开(公告)日：2007-04-25

    申请号：EP00985165.0

    申请日：2000-12-13

    申请人： FEI COMPANY

    发明人： KRANS, Jan, M. ,  TIEMEIJER, Peter, C.

    IPC分类号： H01J37/06

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/06316 ,  H01J2237/0635

    摘要： Multi-beam lithography apparatus is used for writing patterns on a substrate (14) such as a wafer for ICs. The patterns may have details of various dimensions. In order to enhance the production rate, it is attractive to write fine details with a small spot 16 and large details with a large spot. It is known to vary the spot size by varying the emissive surface of the electron source. In accordance with the invention the spot size is varied by varying the size (22) of the beam limiting aperture (20), thus enabling optimization of the beam current in dependence on the spot size. A preferred embodiment is provided with an additional (condenser) lens (24) such that the object distance remains constant when the magnification of the lens system (18, 24) is varied.

    Cathode with improved work function and method for making the same
    19.
    发明公开
    Cathode with improved work function and method for making the same 有权
    阴极具有改进的功函数，并产生相同的方法

    公开(公告)号：EP1063669A3

    公开(公告)日：2006-08-16

    申请号：EP00305015.0

    申请日：2000-06-13

    申请人： LUCENT TECHNOLOGIES INC.

    发明人： Sungho, Jin ,  Katsap, Victor ,  Waskiewicz, Warren K. ,  Zhu, Wei

    IPC分类号： H01J1/15 ,  H01J9/04 ,  H01J37/06

    CPC分类号： H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

    摘要： A cathode (110) with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer (114) between a substrate (112) and an emissive layer (116), where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.