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    Passive devices and modules for transceiver and manufacturing method thereof
    11.
    发明公开
    Passive devices and modules for transceiver and manufacturing method thereof 审中-公开
    被动组件和收发器模块及其制备方法

    公开(公告)号：EP1276152A3

    公开(公告)日：2003-01-22

    申请号：EP02013187.6

    申请日：2002-06-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, Insang

    IPC分类号： H01L23/64 ,  H01L27/13

    CPC分类号： B81B7/0064 ,  H01F17/0006 ,  H01F17/02 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6672 ,  H01L2924/0002 ,  H03H7/0115 ,  H03H7/1775 ,  H03H7/46 ,  H03H2007/006 ,  H01L2924/00

    摘要： A passive device and module for a transceiver, and a manufacturing method thereof are provided. The passive device includes a semiconductor or a dielectric substrate, at least one capacitor, at least one inductor, a viahole, a metal electrode, radio frequency signals, a radio frequency ground, a packaging substrate. The capacitor is formed on a first surface of the substrate. The inductor is formed on a second surface of the substrate that is opposite to the first surface. The viahole penetrates through the substrate. The metal electrode is formed on the viahole and electrically connects the capacitor on the first surface and the inductor on the second surface. The radio frequency ground is formed on the substrate and isolated from the radio frequency signals. The packaging substrate is bonded on the substrate, having a cavity covering a structure on the bonded surface of the substrate. Also, use of MEMS technique can reduce insertion loss of inductors, which improves the communication quality of the communication systems.

    Semiconductor devices with impedance matching circuits, and methods of manufacture thereof
    20.
    发明公开
    Semiconductor devices with impedance matching circuits, and methods of manufacture thereof 审中-公开
    具有阻抗匹配电路的半导体器件，及其制造方法

    公开(公告)号：EP2722882A2

    公开(公告)日：2014-04-23

    申请号：EP13183320.4

    申请日：2013-09-06

    申请人： Freescale Semiconductor, Inc.

    发明人： Viswanathan, Lakshminarayan ,  Jones, Jeffrey ,  Marshall, Scott D.

    IPC分类号： H01L23/66

    CPC分类号： H01L23/66 ,  H01L23/047 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

    摘要： Embodiments of semiconductor devices (100, 300, 600, 700, 800, 900, 1100) (e.g., RF devices) include a substrate (306, 606, 706, 806, 906, 1106), an isolation structure (308, 608, 708, 808, 908, 1108), an active device (120, 320, 620, 720, 820, 920, 1120), a lead (104, 304, 604, 704, 804, 904, 1104), and a circuit (149, 150, 349, 350, 649, 650, 749, 750, 849, 850, 949, 950). The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements (136, 138, 144, 146, 338, 344, 638, 644, 738, 744, 838, 844, 846, 936, 938, 944, 946, 1136, 1146) positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit (149, 349, 649, 749, 849, 949) and/or an impedance matching circuit (150, 350, 650, 750, 850, 950). Embodiments also include method (1202, 1204, 1206, 1208, 1210) of manufacturing such semiconductor devices.

    摘要翻译： 半导体装置的实施例（100，300，600，700，800，900，1100）（例如，RF）装置包括一个基片（306，606，706，806，906，1106），在隔离结构（308，608， （708，808，908，1108）有源器件（120，320，620，720，820，920，1120），铅（104，304，604，704，804，904，1104），和一个电路上 149，150，349，350，649，650，749，750，849，850，949，950）。 隔离结构耦合到所述基底，并且包括开口。 的有源器件区域由基材表面的一部分所限定并通过开口露出。 有源器件在有源器件区域内耦合到所述衬底的表面。 该电路电耦合在有源器件和引线之间。 该电路包括以外的活性定位一个或多个元素（136，138，144，146，338，344，638，644，738，744，838，844，846，936，938，944，946，1136，1146） 设备区域（例如，物理耦合到所述隔离结构和/或下的铅）。 有源器件区域的外部定位在所述元件可以包括一个包络终端电路（149，349，649，749，849，949）和/或阻抗匹配电路（150，350，650，750，850，950）的元件。 因此，实施例包括检查半导体器件的制造方法（1202，1204，1206，1208，1210）。