摘要:
A first conductor having a surface formed with an Au layer is connected, via a Zn-containing solder, to a second conductor which is conductive at least at a surface thereof. The first conductor may be, for example, a terminal pad (11a, 11b, 11c) constituting a part of a wiring pattern on a circuit board (1), whereas the second conductor may be a terminal (20a, 21a) of an electronic component (20, 21) or a terminal plate (22). The first conductor is connected to the second conductor via an Au-Zn alloy layer which is formed as a result of the diffusion of Zn from the Zn-containing solder into the Au layer of the first conductor.
摘要:
A personal ornament having a white coating layer comprises a base article made of a metal, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the base article. Another personal ornament having a white coating layer comprises a base article made of a nonferrous metal, an underlying plating layer formed on the surface of the base article, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the underlying plating layer. A process for producing a personal ornament having a white outermost layer comprises steps of forming a base article of the personal ornament by machining a metal; washing and degreasing the surface of the base article; cleaning the base article by bombard cleaning in the dry plating apparatus; and forming a white-colored stainless steel coating layer on the base article surface by a dry plating process. Another process for producing a personal ornament having a white outermost layer comprises steps of forming a base article of the personal ornament from a nonferrous metal by machining; washing and degreasing the surface of the base article; forming on the surface of the base article an underlying plating layer by a wet plating process or a dry plating process; cleaning the surface of the underlying plating layer by bombard cleaning in a dry plating apparatus; and forming a white-colored stainless steel coating layer by a dry plating process on the surface of the underlying plating layer. The present invention provides a low-priced personal ornament which has a white-colored inexpensive stainless steel outermost coating layer having a long-term corrosion resistance, and also provides a process for producing the personal ornament.
摘要:
The invention relates to use of a solder composition exhibiting a desired combination of high creep resistance at typical operating temperatures and low stress in formed solder joints. The invention uses a solder containing 82 to 85 wt.% Au, 12 to 14 wt.% Sn, and 3 to 4 wt.% Ga (optionally with up to 2 wt.% additional elements). The small amount of added Ga induces a significant depression in the liquidus temperatures of both Au and Sn, and thus a depressed melting point (about 27°C less than eutectic Au-Sn solder), and also provides an enhanced temperature-sensitivity of the solder's creep resistance.
摘要:
The object of the invention is to provide a reflector in which a reduction in high reflection factor of Ag is restricted, a stable wheatherability can be attained in a continuous manner even if it is exposed in a severe environment of high temperature and high humidity and further a high practical effect with the connecting characteristic being effectively enforced can be attained and also a high reliability is provided. The alloy reflective film 3 made of AgPdCu alloy or AgPdTi alloy with Ag being applied as major component, with Pd being added in a range of 0.5 to 3.0wt%, with either Cu or Ti, for example, in Al, Au, Pt, Cu, Ta, Cr, Ti, Ni, Co, Si as the third element being added in a range of 0.1 to 3.0 wt% is formed on the substrate 2 in a predetermined film thickness (nm). As its pre-treatment, the organic ground film 8 is applied on the substrate 2 and the reflective film 3 is formed on the film to enforce effectively the connecting characteristic.
摘要:
Adhesive film useful for the production of semiconductor devices is produced from a siloxane-modified polyamideimide resin composition, comprising 100 parts by weight of a siloxane-modified polyamideimide resin and 1 to 200 parts by weight of a thermosetting resin ingredient.
摘要:
A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys deposited in high aspect ratio structures including lines and vias. By using a germanium gas flow, germanium (Ge) will be introduced in a surface reaction which prevents voids and side seams and which also provides a passivating layer of CuGe. If a hard cap is needed for surface passivation or a wear-resistance application, the GeH 4 gas followed by WF 6 can be used to produce an in-situ hard cap of W x Ge y . Further, high aspect ratio vias/lines (aspect ratio of 3 or more) can be filled by utilizing low pressures and high temperatures (i.e., below 450 °C) without degrading the underlying metals.
摘要:
Adhesive film useful for the production of semiconductor devices is produced from a siloxane-modified polyamideimide resin composition, comprising 100 parts by weight of a siloxane-modified polyamideimide resin and 1 to 200 parts by weight of a thermosetting resin ingredient.