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    COMBINATORIAL MOLECULAR LAYER EPITAXY DEVICE
    21.
    发明公开
    COMBINATORIAL MOLECULAR LAYER EPITAXY DEVICE 有权
    KOMBINATORISCHE VORRICHTUNGFÜREPITAKTISCHE MOLEKULARSCHICHT

    公开(公告)号：EP1038996A1

    公开(公告)日：2000-09-27

    申请号：EP99943276.8

    申请日：1999-09-10

    申请人： Japan Science and Technology Corporation ,  Kawasaki, Masashi

    发明人： KAWASAKI, Masashi Tokyo Inst. Tech ,  KOINUMA, Hideomi Tokyo Inst. Tech

    IPC分类号： C30B23/08 ,  H01L21/203

    CPC分类号： B01J19/0046 ,  B01J2219/00443 ,  B01J2219/00445 ,  B01J2219/00495 ,  B01J2219/00527 ,  B01J2219/00536 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00659 ,  B01J2219/00689 ,  B01J2219/00745 ,  B01J2219/00747 ,  C30B23/002 ,  C40B30/08 ,  C40B40/18 ,  C40B60/14 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units. The process conducting chambers includes a growth chamber (24) which has a multiple raw material supply means for supplying raw materials onto a substrate (5) held by a substrate heating unit, a gas supply means for feeding a gas onto a surface of the substrate, and an instantaneous observation means for instantaneously observing epitaxial growth of monomolecular layers for each of the layers on the substrate surface, thereby rendering the formation of vacuum chambers constituting from substrate heating unit and process conducting chambers, which are controllable in temperatures and pressures.

    摘要翻译： 提供组合分子层外延装置，其包括其中具有压力可控的公共室（22） 一个或多个可输送基板加热单元（36），具有用于将一个或多个基板保持在公共室中的基板保持器（48） 以及一个或多个具有压力的过程传导室（24,26,28），其可控制并且被提供以对应于衬底加热单元。 工艺导电室包括生长室（24），其具有用于将原材料供应到由基板加热单元保持的基板（5）上的多个原料供给装置，用于将气体供给到基板的表面上的气体供给装置 以及用于瞬时观察基板表面上的每个层的单分子层的外延生长的瞬时观察装置，从而形成由温度和压力可控的基板加热单元和加工导电室构成的真空室。

    METHOD FOR PRODUCING MONOCRYSTAL
    27.
    发明公开
    METHOD FOR PRODUCING MONOCRYSTAL 有权
    VERFAHREN ZUR HERSTELLUNG VON MONOKRISTALLEN

    公开(公告)号：EP2508653A1

    公开(公告)日：2012-10-10

    申请号：EP10833086.1

    申请日：2010-11-12

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： NISHIGUCHI, Taro ,  SASAKI, Makoto ,  HARADA, Shin

    IPC分类号： C30B23/08 ,  C30B29/36

    CPC分类号： C30B29/36 ,  C30B23/025

    摘要： A seed crystal (11) having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal (11) is increased. A coating film including carbon is formed on the backside surface of the seed crystal (11). The coating film and a pedestal (41) are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal (11) to the pedestal (41). A single crystal (52) is grown on the seed crystal (11). Before the growth is performed, a carbon film (22) is formed by carbonizing the coating film.

    摘要翻译： 制备具有前表面和背面的晶种（11）。 晶种（11）的背面的表面粗糙度增加。 在晶种（11）的背面形成有包含碳的涂膜。 涂膜和基座（41）通过粘合剂彼此接触。 固化粘合剂以将晶种（11）固定到基座（41）上。 在晶种（11）上生长单晶（52）。 在进行生长之前，通过碳化涂膜形成碳膜（22）。

    SEMICONDUCTOR WAFER AND ITS MANUFACTURING METHOD
    30.
    发明公开
    SEMICONDUCTOR WAFER AND ITS MANUFACTURING METHOD 审中-公开
    HELLBLEITERSCHEIBE UND HERSTELLUNGSVERFAHREN

    公开(公告)号：EP1043764A1

    公开(公告)日：2000-10-11

    申请号：EP99952799.7

    申请日：1999-10-28

    申请人： Shin-Etsu Handotai Co., Ltd

    发明人： OSE, Hiroki, Shin-Etsu Handotai Co., Ltd

    IPC分类号： H01L21/205 ,  H01L21/22 ,  C30B23/02 ,  C30B23/04 ,  C30B23/06 ,  C30B23/08 ,  C23C16/44

    CPC分类号： C23C16/45561 ,  C23C16/455 ,  C30B25/14 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  Y10T29/41

    摘要： It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter.
    When a process gas is supplied to over a main surface of a silicon single crystal substrate 12 in rotation in almost parallel to the main surface thereof in one direction in a reaction chamber 10 through six inlet ports 18a to 18f disposed in width direction of the reaction chamber 10, H 2 gas, a semiconductor raw material gas and a dopant gas are supplied onto an area in the vicinity of the center of the main surface of the silicon single crystal substrate 12 and an intermediate area thereof through the inner inlet ports 18a and 18b and the middle inlet ports 18c and 18d, and only H 2 gas and the semiconductor raw material gas without the dopant gas are supplied onto an area in the vicinity of the outer periphery thereof from the outer inlet ports 18e and 18f.
    In such arrangement, a dopant gas produced by the auto-doping phenomenon is supplied onto the area in the vicinity of the outer periphery of the main surface of the silicon single crystal substrate 12. For this reason, the dopant gases from both sources are combined, thereby a concentration of the dopant gas supplied over all the main surface of the silicon single crystal substrate12 is almost uniform.

    摘要翻译： 本发明的目的是提供一种通过在直径为300mm以上的半导体单晶衬底的主表面上形成具有均匀电阻率的半导体薄膜而获得的半导体晶片。 当在反应室10中通过在反应的宽度方向上设置的六个入口18a至18f将工艺气体在一个方向上以大致平行于其主表面的方式大致平行于硅单晶衬底12的主表面供应到超过主单面 室10，H2气体，半导体原料气体和掺杂剂气体通过内部入口18a和18b供应到硅单晶衬底12的主表面的中心附近的区域及其中间区域 中间入口18c和18d，只有H2气体和没有掺杂剂气体的半导体原料气体从外部入口18e和18f供应到其外周附近的区域上。 在这种布置中，通过自动掺杂现象产生的掺杂剂气体被供应到硅单晶衬底12的主表面的外周附近的区域。为此，来自两个源的掺杂剂气体被组合 从而在硅单晶衬底12的全部主表面上供给的掺杂剂气体的浓度几乎均匀。