公开(公告)号：EP2522030A2

公开(公告)日：2012-11-14

申请号：EP11732243.8

申请日：2011-01-07

申请人： TRANSPHORM INC.

发明人： WU, Yifeng

IPC分类号： H01L23/58 ,  H02M3/155

CPC分类号： H01L24/43 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/085 ,  H01L2224/43 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M7/003 ,  H03K17/567 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of the III-N transistor is electrically connected to a second lead of the single package and to a first electrode of the III-N rectifying device, and a second electrode of the III-N rectifying device is electrically connected to a third lead of the single package.

公开(公告)号：EP1929390A4

公开(公告)日：2012-11-07

申请号：EP06790596

申请日：2006-08-29

申请人： MOSAID TECHNOLOGIES INC

发明人： OH HAKJUNE

IPC分类号： H01L23/58 ,  H01L27/00 ,  H03K17/14 ,  H03K19/00 ,  H03K19/0948

CPC分类号： H03K19/0016 ,  H01L27/092 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2422369A1

公开(公告)日：2012-02-29

申请号：EP10767422.8

申请日：2010-04-21

申请人： Shat-R-Shield, Inc

发明人： NOLAN, Robert, J. ,  HARMAN, Jeffery, D., Sr.

IPC分类号： H01L23/58

CPC分类号： H01L33/44 ,  H01L33/56 ,  H01L2933/0025

摘要： A silicone coated light-emitting diode and the method for making the silicone coated light-emitting diode.

公开(公告)号：EP1932176B1

公开(公告)日：2011-11-16

申请号：EP06809399.6

申请日：2006-09-25

申请人： NXP B.V.

发明人： MARIE, Hervé ,  ELLOUZ, Sofiane

IPC分类号： H01L23/544 ,  H01L23/58

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A wafer (W) comprises i) at least one independent die (D1, D2) having internal integrated components (IC), a multiplicity of internal pads (IP1-IP3) connected to some of the internal integrated components (IC), ii) scribe lanes (SL) defined between and around each independent die (Di), and in part of which are defined, for each die (D1, D2), at least a first group (G11, G12) of external pads (EP1-EP3) and/or a second group of external test integrated components (EC). The external pads (EP1-EP3) of each first group (G11, G12) are connected, through conductive tracks, to a chosen one of the internal pads (IP1-IP3) and/or internal integrated components (IC) of the associated die (D1, D2), and arranged to be fed with chosen test signals or to collect test result signals. Each external test integrated components of each second group is connected, through conductive tracks, to a chosen one of the die internal pads and/or die internal integrated components (IC) and/or to external pads of a first group.

公开(公告)号：EP1538666B1

公开(公告)日：2011-09-14

申请号：EP03815737.6

申请日：2003-07-14

申请人： Panasonic Corporation

发明人： ITOH, Rie c/o Matsuhita Electric Industrial Co.,Ltd., IPROC ,  MATSUNO, Noriaki c/o Matsuhita Electric Industrial Co.,Ltd., IPROC ,  TSUNODA, Masato c/o Matsuhita Electric Industrial Co.,Ltd., IPROC

IPC分类号： H01L21/82 ,  H01L27/04 ,  H01L21/3205 ,  G06F1/04 ,  H01L23/58 ,  H01L23/498 ,  H01L23/538

CPC分类号： H01L23/576 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/528 ,  H01L2924/0002 ,  Y10S257/922 ,  H01L2924/00

摘要： A semiconductor integrated circuit device (10) comprising an LSI function section (11), and a shield wiring layer (22) formed thereon. The LSI function section (11) comprises a semiconductor substrate (12) and a first insulation film (13) wherein a circuit element including an MOS transistor (14), for example, is formed on the semiconductor substrate (12). The shield wiring layer (22) comprises a lower shield wiring (23), a third insulation film (24), an upper shield wiring (25), and a fourth insulation film (26) formed sequentially on a second insulation film (17). Arranging directions of the lower shield wiring (23) and the upper shield wiring (25) intersect perpendicularly.

摘要翻译： 一种半导体集成电路器件（10），包括一个LSI功能部分（11）和一个形成在其上的屏蔽布线层（22）。 LSI功能部分11包括半导体衬底12和第一绝缘膜13，其中例如包括MOS晶体管14的电路元件形成在半导体衬底12上。 屏蔽布线层22包括依次形成在第二绝缘膜17上的下部屏蔽布线23，第三绝缘膜24，上部屏蔽布线25和第四绝缘膜26， 。 布置下屏蔽布线（23）和上屏蔽布线（25）的方向垂直相交。

公开(公告)号：EP1992011A4

公开(公告)日：2011-08-31

申请号：EP07717533

申请日：2007-02-02

申请人： TEXAS INSTRUMENTS INC

发明人： ABBOTT DONALD C

IPC分类号： H01L21/44 ,  H01L23/58

CPC分类号： H01L23/49582 ,  H01L21/561 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： A post-mold plated semiconductor device has an aluminum leadframe (105) with a structure including a chip mount pad and a plurality of lead segments without cantilevered lead portions. A semiconductor chip (210) is attached to the chip mount pad, and conductive connections (212) span from the chip to the aluminum of the lead segments. Polymeric encapsulation material (220), such as a molding compound, covers the chip, the connections, and portions of the aluminum lead segments without leaving cantilevered segment portions. Preferably by electroless plating, a zinc layer (301) and a nickel layer (302) are on those portions of the lead segments, which are not covered by the encapsulation material including the aluminum segment surfaces (at 203b) formed by the device singulation step, and a layer (303) of noble metal, preferably palladium, is on the nickel layer.

公开(公告)号：EP1670050A4

公开(公告)日：2011-06-15

申请号：EP04772752

申请日：2004-08-27

申请人： PANASONIC CORP

发明人： MATSUNO NORIAKI ,  TSUNODA MASATO ,  WADA HIROFUMI

IPC分类号： H01L21/3205 ,  G06F17/50 ,  G06F21/00 ,  G06K19/073 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/58 ,  H01L27/04 ,  H01L29/40 ,  H01L29/51

CPC分类号： G06F17/5077 ,  G06F21/75 ,  G06K19/07372 ,  H01L23/522 ,  H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1751799B1

公开(公告)日：2011-04-27

申请号：EP05756194.6

申请日：2005-06-02

申请人： Eastman Kodak Company

发明人： TAN, Liang ,  ERHARDT, Herbert, James

IPC分类号： H01L23/58 ,  H01L23/485

CPC分类号： H01L23/485 ,  H01L23/53228 ,  H01L23/53257 ,  H01L27/14636 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit includes a substrate; a sealing element spanning a periphery of the substrate that forms a protective boundary for the substrate; a plurality of copper lines spanning the substrate in at least two distinct layers contained within the protective boundary; a first conducting element disposed outside the sealing element; and one or more second conducting elements connecting at least two of the copper lines and that spans the sealing element; wherein the conducting elements are substantially non-oxidizing metals that are resistant to oxidization and that connect the copper line to the first conducting element.

公开(公告)号：EP1941545A4

公开(公告)日：2011-03-30

申请号：EP06825349

申请日：2006-10-03

申请人： IBM

发明人： YANG CHIH-CHAO ,  GAUDET SIMON ,  LAVOIE CHRISTIAN ,  PONOTH SHOM ,  SPOONER TERRY A

IPC分类号： H01L23/58 ,  H01L23/532

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2290684A1

公开(公告)日：2011-03-02

申请号：EP09169154.3

申请日：2009-09-01

申请人： Microdul AG

发明人： De Zaldivar, José Solo ,  Poole, Philip John

IPC分类号： H01L23/552 ,  H01L31/0216 ,  H01L23/58

CPC分类号： H01L31/02164 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method to provide at least one protective, especially a light-shielding, layer (2) on an integrated circuit (10) applies the protective metal layer (2) as an additional layer to the integrated circuit (10) after completion of the integrated circuit manufacturing step. This allows for an at least partly shielded integrated circuit comprising a protective layer (2,4), wherein the metallic shielding layer (2) and the overlying polyimide layer (4) are patterned with a different, coarser resolution than the other IC metal interconnection layers.

摘要翻译： （2）作为附加的层，以在集成电路（10）的集成完成之后的方法，（2）上的集成电路提供至少一个保护性的，爱尤其遮光，层（10）适用于保护金属层 电路的制造步骤。 这允许用于在至少部分地屏蔽集成电路，包括一个保护层（2.4），所述worin金属屏蔽层（2）和上覆的聚酰亚胺层（4）与比其它IC金属互连不同的，粗糙的分辨率图案化 层。