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公开(公告)号：EP0348018B1
公开(公告)日：1999-05-19
申请号：EP89202085.0
申请日：1983-02-23
申请人： HITACHI, LTD.
IPC分类号： H01L23/49 , H01L21/607
CPC分类号： H01L24/85 , B23K20/007 , H01L23/3135 , H01L23/4952 , H01L23/49582 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48472 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48655 , H01L2224/48724 , H01L2224/48739 , H01L2224/48755 , H01L2224/48799 , H01L2224/48824 , H01L2224/48839 , H01L2224/48855 , H01L2224/73265 , H01L2224/78301 , H01L2224/85043 , H01L2224/85045 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/92247 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0104 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/20107 , H01L2924/2011 , H01L2924/20111 , H01L2924/2075 , H01L2924/01049
摘要： A resin encapsulated semiconductor device having at least one semiconductor element (3) which has at least one electrical connection to a lead frame by means of a wire (1) which has been solid-state bonded at one end to said semiconductor element and at the other end to the lead frame, said element and wire being encapsulated hermetically with a resin (12). The wire (1) is made of Cu and is in the annealed state having a maximum elongation at room temperature of not more than 60% throughout its length between said bonded ends. Such a wire has low susceptibility to constriction or other local deformation.
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公开(公告)号：EP0276564B1
公开(公告)日：1992-03-11
申请号：EP87311245.2
申请日：1987-12-21
申请人： HITACHI, LTD.
发明人： Nakajima, Makoto , Ohashi, Yosho , Chuma, Toshio No. D-101, Hitachikaminakaishataku , Hatori, Kazuo , Araki, Isao , Onuki, Jin , Koizumi, Masahiro , Suzuki, Hitoshi , Okikawa, Susumu
CPC分类号： H01L24/85 , B23K20/007 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/05624 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/73265 , H01L2224/78268 , H01L2224/78301 , H01L2224/786 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85099 , H01L2224/851 , H01L2224/85181 , H01L2224/85205 , H01L2224/85424 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/01079 , H01L2924/01083 , H01L2924/01204 , H01L2924/01205 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/20753 , H01L2924/3025 , H01L2924/00014 , H01L2924/01001 , H01L2924/00012 , H01L2924/00 , H01L2224/48824 , H01L2924/20752 , H01L2924/20755 , H01L2924/20758 , H01L2924/00015 , H01L2924/2075 , H01L2924/20754
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公开(公告)号：EP0297502B1
公开(公告)日：1995-02-01
申请号：EP88110281.8
申请日：1988-06-28
申请人： HITACHI, LTD.
CPC分类号： C23C14/345 , C23C14/046 , C23C14/35 , C23C14/358 , H01J37/321 , H01J37/34 , H01J37/3444 , H01L21/76843
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公开(公告)号：EP0326018A3
公开(公告)日：1991-04-17
申请号：EP89100865.8
申请日：1989-01-19
申请人： HITACHI, LTD.
发明人： Onuki, Jin , Koubuchi, Yasushi , Fukada, Shinichi , Shiota, Katuhiko , Miyazaki, Kunio , Itagaki, Tatsuo , Taki, Genji
CPC分类号： H01L21/76886 , H01L21/28518 , H01L21/32136 , H01L21/76888 , H01L23/53219 , H01L23/53223 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01047 , H01L2924/10253 , H01L2924/181 , Y10T428/12528 , Y10T428/12611 , Y10T428/12625 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device and the method of fabricating the semiconductor device include a semiconductor substrate (1) and a plurality of conductor films (2) formed on the substrate. Each of the conductor films (2) is made of aluminum alloy including at least one element selected from palladium and platinum and, more preferably, further including at least one element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chrome, hafunium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobitum, with a protective film (3) which includes oxide of the selected one of palladium and platinum being formed on the side wall of the conductor film (2).
摘要翻译： 半导体器件和制造半导体器件的方法包括半导体衬底（1）和形成在衬底上的多个导体膜（2）。 每个导体膜（2）由包括选自钯和铂中的至少一种元素的铝合金制成，更优选地还包括选自锂，铍，镁，锰，铁，钴，镍， 铜，镧，铈，铬，铪，锆，镉，钛，钨，钒，钽和铌酸盐，具有保护膜（3），其包括形成在钯和铂的侧壁上的选择的钯和铂的氧化物 导体膜（2）。
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公开(公告)号：EP0349095A3
公开(公告)日：1990-05-02
申请号：EP89202084.3
申请日：1983-02-23
申请人： HITACHI, LTD.
IPC分类号： H01L21/607 , H01L23/49 , B23K20/00
CPC分类号： H01L24/85 , B23K20/007 , B23K2201/42 , H01L23/3107 , H01L23/3135 , H01L23/48 , H01L23/49 , H01L23/4952 , H01L23/49582 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45166 , H01L2224/45169 , H01L2224/4517 , H01L2224/4518 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48472 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48655 , H01L2224/48724 , H01L2224/48739 , H01L2224/48755 , H01L2224/48799 , H01L2224/48839 , H01L2224/48855 , H01L2224/73265 , H01L2224/78301 , H01L2224/85043 , H01L2224/85045 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/85948 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/16152 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , Y10T428/12431 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2924/00015 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要： A metal wire for use in connection to integrated circuits has a ball at its tip. The wire has a diameter of 20 to 100 µm and a maximum elongation of not more than 60% at room temperature (20°C) and is an Al wire or a Cu wire. The wire has been annealed at a temperature higher than the recrystallization temperature of the metal material in a non-oxidizing atmosphere. The ball is spherical in shape and has a hardness substantially equal to that of the metal wire. When used, this wire avoids local deformation.
摘要翻译： 树脂封装的半导体器件包括半导体元件（3），导电端子（4）和连接元件（3）和端子（4）的导线（1）。 热固性树脂（12）密封该部件，以保护装置免受机械应力和环境气氛的影响。 为了在其端部实现线（1）的良好的接合，线（1）由处于退火状态的金属（例如Al）制成，室温下的最大伸长率不超过60％，线 在接合之前已经退火。
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公开(公告)号：EP0276564A1
公开(公告)日：1988-08-03
申请号：EP87311245.2
申请日：1987-12-21
申请人： HITACHI, LTD.
发明人： Nakajima, Makoto , Ohashi, Yosho , Chuma, Toshio No. D-101, Hitachikaminakaishataku , Hatori, Kazuo , Araki, Isao , Onuki, Jin , Koizumi, Masahiro , Suzuki, Hitoshi , Okikawa, Susumu
CPC分类号： H01L24/85 , B23K20/007 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/05624 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/73265 , H01L2224/78268 , H01L2224/78301 , H01L2224/786 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85099 , H01L2224/851 , H01L2224/85181 , H01L2224/85205 , H01L2224/85424 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/01079 , H01L2924/01083 , H01L2924/01204 , H01L2924/01205 , H01L2924/10253 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/20753 , H01L2924/3025 , H01L2924/00014 , H01L2924/01001 , H01L2924/00012 , H01L2924/00 , H01L2224/48824 , H01L2924/20752 , H01L2924/20755 , H01L2924/20758 , H01L2924/00015 , H01L2924/2075 , H01L2924/20754
摘要： In ball bonding, a ball (112) is formed on the end of a wire (105) by an electric discharge between the wire (105) and a discharge electrode (116). The ball (112) is subsequently pressed onto a pad of a semiconductor pellet and bonded thereto by press bonding under heat with the application of ultrasonic vibrations. However, the pressing of the ball onto the pad may damage the pellet if the ball (112) is too hard. Therefore, a reducing gas (121) is supplied to the environs of the ball (112) during its formation, the gas being supplied at a temperature preferably between 100°C and 200°C. This shows the cooling of the ball (112) resulting in a finer cyrstal structure, and a lower hardness. Hence the occurrence of cracking of the pellet is reduced.
摘要翻译： 在球接合中，通过线（105）和放电电极（116）之间的放电，在导线（105）的端部上形成球（112）。 随后将球（112）压在半导体芯片的焊盘上，并通过施加超声振动的加热粘合。 然而，如果球（112）太硬，则将球压到垫上可能损坏球团。 因此，在其形成期间，将还原气体（121）供应到球体（112）的周围，该气体优选在100℃至200℃之间的温度下供给。这表示球体（112）的冷却， 导致更精细的晶体结构和较低的硬度。 因此，颗粒的破裂的发生减少。
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公开(公告)号：EP0101299B1
公开(公告)日：1986-10-22
申请号：EP83304626.1
申请日：1983-08-10
申请人： HITACHI, LTD.
发明人： Onuki, Jin , Suwa, Masateru , Koizumi, Masahiro , Asai, Osamu , Suzuki, Katsumi , Hiraga, Ryo
CPC分类号： C22C21/00 , H01L23/3107 , H01L23/3135 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48599 , H01L2224/48624 , H01L2224/48639 , H01L2224/48724 , H01L2224/48739 , H01L2224/73265 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/85205 , H01L2224/85439 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01057 , H01L2924/01061 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/12033 , H01L2924/12042 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/01046 , H01L2924/01001 , H01L2924/01002 , H01L2924/00014 , H01L2924/01025 , H01L2924/00012 , H01L2924/00 , H01L2924/013 , H01L2924/00015 , H01L2924/2075 , H01L2924/00013 , H01L2924/01006
摘要： A corrosion-resistant aluminum electronic material comprising an alloy containing aluminum as the principal component and, in addition, a small amount of a noble metal, the content of said noble metal being equal to or less than that at the eutectic point having the primary crystal of aluminum. As the noble metal, there is contained at least one metal selected from Pt, Pd, Rh, Ir, Os, Ru, Au and Ag. Said electronic material is used for ball-bonding wire and distributing film in a semiconductor device, and the like.
摘要翻译： 一种耐腐蚀铝电子材料，其包含以铝为主要成分的合金，另外，少量的贵金属，所述贵金属的含量等于或低于在具有初晶的共晶点的含量 的铝。 作为贵金属，含有选自Pt，Pd，Rh，Ir，Os，Ru，Au和Ag中的至少一种金属。 所述电子材料用于半导体器件中的球焊线和分配膜等。
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公开(公告)号：EP0706221B8
公开(公告)日：2008-09-03
申请号：EP95307054.7
申请日：1995-10-04
发明人： Yamada, Kazuji , Tanaka, Akira , Saito, Ryuichi , Kurihara, Yasutoshi , Kushima, Tadao , Haramaki, Takashi , Koike, Yoshihiko , Hosokawa, Takashi , Sawahata, Mamoru , Koizumi, Masahiro , Onuki, Jin , Suzuki, Kazuhiro , Kobayashi, Isao , Shimizu, Hideo , Higashimura, Yutaka , Sekine, Shigeki , Koike, Nobuya , Kokubun, Hideya
IPC分类号： H01L25/07 , H01L23/495 , H01L23/373
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49431 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base (13), the upper surface of the heat dissipating base being covered with a member (12) for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
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公开(公告)号：EP0326018B1
公开(公告)日：1997-11-19
申请号：EP89100865.8
申请日：1989-01-19
申请人： HITACHI, LTD.
发明人： Onuki, Jin , Koubuchi, Yasushi , Fukada, Shinichi , Shiota, Katuhiko , Miyazaki, Kunio , Itagaki, Tatsuo , Taki, Genji
CPC分类号： H01L21/76886 , H01L21/28518 , H01L21/32136 , H01L21/76888 , H01L23/53219 , H01L23/53223 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01047 , H01L2924/10253 , H01L2924/181 , Y10T428/12528 , Y10T428/12611 , Y10T428/12625 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
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10.发明公开
公开(公告)号：EP0706221A3
公开(公告)日：1997-11-05
申请号：EP95307054.7
申请日：1995-10-04
发明人： Yamada, Kazuji , Tanaka, Akira , Saito, Ryuichi , Kurihara, Yasutoshi , Kushima, Tadao , Haramaki, Takashi , Koike, Yoshihiko , Hosokawa, Takashi , Sawahata, Mamoru , Koizumi, Masahiro , Onuki, Jin , Suzuki, Kazuhiro , Kobayashi, Isao , Shimizu, Hideo , Higashimura, Yutaka , Sekine, Shigeki , Koike, Nobuya , Kokubun, Hideya
IPC分类号： H01L25/07 , H01L23/495
CPC分类号： H01L23/49562 , H01L23/049 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0655 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/45015 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49431 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base (13), the upper surface of the heat dissipating base being covered with a member (12) for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
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