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1.SEMICONDUCTOR PACKAGE WITH CROSSING CONDUCTOR ASSEMBLY AND METHOD OF MANUFACTURE 审中-公开
标题翻译: HALBLEITERBAUGRUPPE MITÜBERKREUZENDERLEITERANORDNUNG UND HERSTELLUNGSVERFAHREN公开(公告)号:EP1719176A2
公开(公告)日:2006-11-08
申请号:EP05711887.9
申请日:2005-01-21
发明人: ZHOU, Yaping , LEE, Chu-Chung
IPC分类号: H01L23/58
CPC分类号: H01L24/85 , H01L23/49838 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05553 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45166 , H01L2224/45184 , H01L2224/45565 , H01L2224/45684 , H01L2224/48091 , H01L2224/48464 , H01L2224/49111 , H01L2224/4917 , H01L2224/49171 , H01L2224/49175 , H01L2224/85 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/14 , H01L2924/181 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2224/78 , H01L2924/00
摘要: A semiconductor package uses various forms of conductive traces that connect to die bond pads via bond wires. In one form, adjacent bond wires are intentionally crossed around midpoints thereof to reduce self-inductance of the conductors and to minimize self-inductance. In another form, bond wires associated with bond pads having intervening, unrelated bond pads are crossed. Additionally, conductive traces are divided into separate sections and electrically connected by crossed jumper wires or bond wires. Any number of separate sections may be formed for each trace, but an even number is preferable. In another form, one trace is continuous and divides a second trace into two or more sections. The multiple sections are connected by an overlying bond wire. Either insulated or non-insulated bond wire may be used.
摘要翻译: 半导体封装使用各种形式的导电迹线,其通过接合线连接到管芯接合焊盘。 在一种形式中,相邻的接合线有意地绕其中点交叉以减少导体的自感并且使自感最小化。 在另一种形式中,与具有中间的,不相关的键合焊盘的接合焊盘相关联的接合线交叉。 此外,导电迹线被划分为单独的部分,并通过交叉的跳线或接合线电连接。 可以为每个迹线形成任何数量的分开的部分,但是偶数是优选的。 在另一种形式中,一条迹线是连续的,并将第二条迹线划分成两个或更多个部分。 多个部分通过上覆接合线连接。 可以使用绝缘或非绝缘的接合线。
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公开(公告)号:EP1615267A1
公开(公告)日:2006-01-11
申请号:EP04727676.1
申请日:2004-04-15
发明人: YONEMURA, Naomi, c/o Denki Kagaku Kogyo KK , YASHIMA, Katunori, c/o Denki Kagaku Kogyo KK , TSUJIMURA, Yoshihiko, c/o Denki Kagaku Kogyo KK , ISHIKURA, Hidenori, c/o Denki Kagaku Kogyo KK , SAIKI, Takashi, c/o Denki Kagaku Kogyo KK
CPC分类号: H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
摘要: To provide a metal base circuit board excellent in heat dissipation properties, which remarkably reduces malfunction time of a semiconductor which occurs when a hybrid integrated circuit is operated at a high frequency.
A metal base circuit board to be use for a hybrid integrated circuit, comprising circuits provided on a metal plate via an insulating layer (A, B), a power semiconductor mounted on the circuit and a control semiconductor to control the power semiconductor, provided on the circuit, wherein a low capacitance portion is embedded under a circuit portion (pad portion) on which the control semiconductor is mounted, preferably, the low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.摘要翻译: 提供一种金属基底电路板具有优异的散热性,从而降低了其中当混合集成电路以高频率操作的发生半导体的显着故障时间。 的金属基底电路板是使用用于混合集成电路,在绝缘层,其包括通过提供在金属板上的电路(A,B),功率半导体安装在所述电路和控制半导体控制功率半导体,设置在上 的电路中,worin低电容部分嵌入的电路部分在其上的控制半导体安装,优选地,低电容部分由含无机填料的树脂的,并且具有2至的介电常数(焊盘部)下 9日
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3.Verfahren zur Kontaktierung eines Halbleiterelements mittels Schweißens eines Kontaktelements an eine Sinterschicht auf dem Halbleiterelement und Halbleiterbauelement mit erhöhter Stabilität gegenüber thermomechanischen Einflüssen 审中-公开
标题翻译: 一种用于通过接触元件的焊接装置将半导体元件和半导体器件上的烧结层的半导体元件的接触方法具有增加的对热机械影响稳定性公开(公告)号:EP2743973A2
公开(公告)日:2014-06-18
申请号:EP13193456.4
申请日:2013-11-19
申请人: ROBERT BOSCH GMBH
发明人: Guenther, Michael
IPC分类号: H01L21/60 , H01L23/488 , H01L23/49
CPC分类号: H01L24/92 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/84 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/04042 , H01L2224/05124 , H01L2224/05147 , H01L2224/05624 , H01L2224/05647 , H01L2224/2731 , H01L2224/27312 , H01L2224/27318 , H01L2224/2732 , H01L2224/27332 , H01L2224/27334 , H01L2224/27505 , H01L2224/27848 , H01L2224/291 , H01L2224/29101 , H01L2224/29139 , H01L2224/29294 , H01L2224/29311 , H01L2224/29318 , H01L2224/29324 , H01L2224/29338 , H01L2224/29339 , H01L2224/29347 , H01L2224/29349 , H01L2224/29355 , H01L2224/29366 , H01L2224/2938 , H01L2224/29381 , H01L2224/29384 , H01L2224/29387 , H01L2224/32225 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/3701 , H01L2224/37026 , H01L2224/37124 , H01L2224/37139 , H01L2224/37144 , H01L2224/37147 , H01L2224/3716 , H01L2224/37166 , H01L2224/37199 , H01L2224/373 , H01L2224/37565 , H01L2224/37639 , H01L2224/37644 , H01L2224/37647 , H01L2224/4005 , H01L2224/40095 , H01L2224/40106 , H01L2224/40157 , H01L2224/40175 , H01L2224/40225 , H01L2224/40475 , H01L2224/40479 , H01L2224/40499 , H01L2224/41505 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4516 , H01L2224/45166 , H01L2224/45199 , H01L2224/453 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/48106 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48476 , H01L2224/48499 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/49505 , H01L2224/73263 , H01L2224/73265 , H01L2224/83191 , H01L2224/83224 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/8346 , H01L2224/83466 , H01L2224/83801 , H01L2224/83815 , H01L2224/8384 , H01L2224/83851 , H01L2224/83907 , H01L2224/84214 , H01L2224/84801 , H01L2224/8484 , H01L2224/85214 , H01L2224/85801 , H01L2224/8584 , H01L2224/92247 , H01L2224/92248 , H01L2924/07811 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30101 , H01L2924/00012 , H01L2924/01014 , H01L2924/00014 , H01L2924/05432 , H01L2924/05032 , H01L2924/0532 , H01L2924/01004 , H01L2924/05042 , H01L2924/0463 , H01L2924/01005 , H01L2924/04642 , H01L2924/01047 , H01L2924/014 , H01L2924/00
摘要: Die vorliegende Erfindung betrifft ein Verfahren zur elektrischen Kontaktierung eines Halbleiterelements (1) als erstem Fügepartner mit einem Kontaktelement (7) als zweitem Fügepartner mit den Schritten: A) Aufbringen eines Sinterwerkstoffs zur Ausbildung einer schweißbaren Sinterschicht (2) auf eine Oberseite des Halbleiterelements (1), B) im Wesentlichen druckfreies Sintern unter Ausbildung einer schweißbaren Sinterschicht (2) auf der Oberseite des Halbleiterelements (1), C) Bestücken der ausgebildeten Sinterschicht (2) mit dem Kontaktelement (7), D) im Wesentlichen druckfreie Ausbildung eines Stoffschlusses und der elektrischen Kontaktierung zwischen der Oberseite des Halbleiterelements (1) und dem Kontaktelement (7) mittels Schweißens, insbesondere mittels Laserschweißens.
Die Schritte B) und C) können in beliebiger Reihenfolge durchgeführt werden.
Die Erfindung betrifft weiterhin ein Halbleiterbauelement (10) hergestellt nach dem erfindungsgemäßen Verfahren.摘要翻译: 该方法涉及施加烧结材料中的连接区域中的半导体材料(1)的顶面和一个接触元件(7)之间。 无压烧结进行,以形成半导体材料的顶部表面上的可焊接的烧结层(2)。 将所形成的烧结可熔接层被下载与接触元件。 材料结合的无压力的形成是通过激光焊接进行的,并且在所述半导体材料的顶表面和接触元件之间的电接触是可能的。 一个独立的claimsoft包括用于半导体器件。
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公开(公告)号:EP2346103A3
公开(公告)日:2014-04-23
申请号:EP11150923.8
申请日:2011-01-14
申请人: LG Innotek Co., Ltd.
发明人: Park, Dong Wook
CPC分类号: H01L33/62 , H01L24/45 , H01L24/48 , H01L33/60 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/45 , H01L2224/45111 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48811 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/78301 , H01L2224/85385 , H01L2924/00011 , H01L2924/00014 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/15156 , H01L2924/15787 , H01L2933/0066 , H01L2924/00 , H01L2224/43 , H01L2924/01006
摘要: Disclosed are a light emitting device, a method of manufacturing the same, and a backlight unit. The light emitting device includes a body (10) including a cavity (15) to open an upper portion, in which the cavity has a sidewall (16) inclined at a first angle from a bottom surface of the cavity, first (31) and second (32) electrodes formed in the body, in which at least portions of the first and second electrodes are formed along the sidewall of the cavity, a light emitting chip over the first electrode, the second electrode, and the bottom surface of the cavity, at least one wire (40) having one end bonded to a top surface of the light emitting chip (20) and an opposite end bonded to a portion of the first and second electrodes over the sidewall of the cavity, and a molding member (50) formed in the cavity to seal the light emitting chip.
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5.Light emitting device and backlight unit 审中-公开
标题翻译: Lichtemittierende Vorrichtung undRückbeleuchtungseinheit公开(公告)号:EP2346103A2
公开(公告)日:2011-07-20
申请号:EP11150923.8
申请日:2011-01-14
申请人: LG Innotek Co., Ltd.
发明人: Park, Dong Wook
CPC分类号: H01L33/62 , H01L24/45 , H01L24/48 , H01L33/60 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/45 , H01L2224/45111 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48811 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/78301 , H01L2224/85385 , H01L2924/00011 , H01L2924/00014 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/15156 , H01L2924/15787 , H01L2933/0066 , H01L2924/00 , H01L2224/43 , H01L2924/01006
摘要: Disclosed are a light emitting device, a method of manufacturing the same, and a backlight unit. The light emitting device includes a body (10) including a cavity (15) to open an upper portion, in which the cavity has a sidewall (16) inclined at a first angle from a bottom surface of the cavity, first (31) and second (32) electrodes formed in the body, in which at least portions of the first and second electrodes are formed along the sidewall of the cavity, a light emitting chip over the first electrode, the second electrode, and the bottom surface of the cavity, at least one wire (40) having one end bonded to a top surface of the light emitting chip (20) and an opposite end bonded to a portion of the first and second electrodes over the sidewall of the cavity, and a molding member (50) formed in the cavity to seal the light emitting chip.
摘要翻译: 公开了发光器件,其制造方法和背光单元。 发光器件包括主体(10),其包括用于打开上部的空腔(15),其中空腔具有从空腔的底表面以第一角度倾斜的侧壁(16),第一(31)和 形成在主体中的第二(32)电极,其中第一和第二电极的至少一部分沿着腔的侧壁形成,在第一电极,第二电极和腔的底表面上方的发光芯片 至少一个线(40)的一端接合到发光芯片(20)的顶表面,并且相对端部结合到腔的侧壁上的第一和第二电极的一部分,以及模制构件 50)形成在腔中以密封发光芯片。
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公开(公告)号:EP0349095A3
公开(公告)日:1990-05-02
申请号:EP89202084.3
申请日:1983-02-23
申请人: HITACHI, LTD.
IPC分类号: H01L21/607 , H01L23/49 , B23K20/00
CPC分类号: H01L24/85 , B23K20/007 , B23K2201/42 , H01L23/3107 , H01L23/3135 , H01L23/48 , H01L23/49 , H01L23/4952 , H01L23/49582 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45166 , H01L2224/45169 , H01L2224/4517 , H01L2224/4518 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48472 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48655 , H01L2224/48724 , H01L2224/48739 , H01L2224/48755 , H01L2224/48799 , H01L2224/48839 , H01L2224/48855 , H01L2224/73265 , H01L2224/78301 , H01L2224/85043 , H01L2224/85045 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/85948 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/16152 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , Y10T428/12431 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2924/00015 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要: A metal wire for use in connection to integrated circuits has a ball at its tip. The wire has a diameter of 20 to 100 µm and a maximum elongation of not more than 60% at room temperature (20°C) and is an Al wire or a Cu wire. The wire has been annealed at a temperature higher than the recrystallization temperature of the metal material in a non-oxidizing atmosphere. The ball is spherical in shape and has a hardness substantially equal to that of the metal wire. When used, this wire avoids local deformation.
摘要翻译: 树脂封装的半导体器件包括半导体元件(3),导电端子(4)和连接元件(3)和端子(4)的导线(1)。 热固性树脂(12)密封该部件,以保护装置免受机械应力和环境气氛的影响。 为了在其端部实现线(1)的良好的接合,线(1)由处于退火状态的金属(例如Al)制成,室温下的最大伸长率不超过60%,线 在接合之前已经退火。
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7.
公开(公告)号:EP2340694B1
公开(公告)日:2014-12-17
申请号:EP09792197.7
申请日:2009-09-03
发明人: MITCHELL, David, J. , KULKARNI, Anand, A. , BURNS, Andrew, J. , FRALEY, John R. , WESTERN, Bryon P. , MCPHERSON, Brice R.
IPC分类号: H05K3/00 , H05K7/00 , H01L21/48 , H01L23/495
CPC分类号: H05K1/183 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L2224/05553 , H01L2224/29294 , H01L2224/29344 , H01L2224/32225 , H01L2224/45014 , H01L2224/45144 , H01L2224/45164 , H01L2224/45166 , H01L2224/45181 , H01L2224/45184 , H01L2224/4554 , H01L2224/45669 , H01L2224/45684 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83801 , H01L2224/85205 , H01L2924/00011 , H01L2924/00013 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/10161 , H01L2924/13062 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H05K1/0271 , H05K1/0306 , H05K1/092 , H05K2201/10636 , H05K2201/10674 , H05K2203/049 , Y02P70/611 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/83205
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8.METAL-BASE CIRCUIT BOARD AND ITS MANUFACTURING METHOD 有权
标题翻译: METALLBASIS-LEITERPLATTE UND HERSTELLUNGSVERFAHRENDAFÜR公开(公告)号:EP1615267A4
公开(公告)日:2010-02-10
申请号:EP04727676
申请日:2004-04-15
IPC分类号: H01L23/12 , H01L21/48 , H01L23/14 , H01L23/373 , H01L23/498 , H01L23/66 , H01L25/04 , H01L25/16 , H05K1/02 , H05K1/05 , H05K3/00 , H05K3/44
CPC分类号: H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
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公开(公告)号:EP0349095B1
公开(公告)日:1999-05-19
申请号:EP89202084.3
申请日:1983-02-23
申请人: HITACHI, LTD.
IPC分类号: H01L21/607 , H01L23/49 , B23K20/00
CPC分类号: H01L24/85 , B23K20/007 , B23K2201/42 , H01L23/3107 , H01L23/3135 , H01L23/48 , H01L23/49 , H01L23/4952 , H01L23/49582 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45166 , H01L2224/45169 , H01L2224/4517 , H01L2224/4518 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48472 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48655 , H01L2224/48724 , H01L2224/48739 , H01L2224/48755 , H01L2224/48799 , H01L2224/48839 , H01L2224/48855 , H01L2224/73265 , H01L2224/78301 , H01L2224/85043 , H01L2224/85045 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/85948 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/16152 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , Y10T428/12431 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2924/00015 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
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公开(公告)号:EP0088557A2
公开(公告)日:1983-09-14
申请号:EP83300956.6
申请日:1983-02-23
申请人: Hitachi, Ltd.
IPC分类号: H01L23/29
CPC分类号: H01L24/85 , B23K20/007 , B23K2201/42 , H01L23/3107 , H01L23/3135 , H01L23/48 , H01L23/49 , H01L23/4952 , H01L23/49582 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45164 , H01L2224/45166 , H01L2224/45169 , H01L2224/4517 , H01L2224/4518 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48472 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48655 , H01L2224/48724 , H01L2224/48739 , H01L2224/48755 , H01L2224/48799 , H01L2224/48839 , H01L2224/48855 , H01L2224/73265 , H01L2224/78301 , H01L2224/85043 , H01L2224/85045 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/85948 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/16152 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , Y10T428/12431 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48824 , H01L2924/00015 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要: A resin encapsulated semiconductor device comprises a semiconductor element (3), a conductive terminal (4) and a wire (1) connecting the element (3) and the terminal (4). A thermosetting resin (12) encapsulates the component hermetically to protect the device from a mechanical stress and ambient atmosphere. In order to achieve good bonding of the wire (1) at its ends, the wire (1) is made of a metal (e.g. Al) having in the annealed state a maximum elongation at room temperature of not more than 60%, the wire having been annealed before the bonding.
摘要翻译: 树脂封装的半导体器件包括半导体元件(3),导电端子(4)和连接元件(3)和端子(4)的导线(1)。 热固性树脂(12)密封该部件,以保护装置免受机械应力和环境气氛的影响。 为了在其端部实现线(1)的良好的接合,线(1)由处于退火状态的金属(例如Al)制成,室温下的最大伸长率不超过60%,线 在接合之前已经退火。
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