公开(公告)号：EP1774595A4

公开(公告)日：2011-05-18

申请号：EP05745905

申请日：2005-05-31

申请人： SEMICONDUCTOR ENERGY LAB

发明人： WATANABE RYOSUKE ,  TAKAHASHI HIDEKAZU ,  TSURUME TAKUYA

IPC分类号： H01L21/00 ,  B42D15/10 ,  G06K19/07 ,  G06K19/077 ,  H01L21/336 ,  H01L21/56 ,  H01L21/68 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H05K13/04

CPC分类号： H01L21/56 ,  B32B37/20 ,  B32B2305/342 ,  B42D25/45 ,  B42D2033/46 ,  G06K19/07718 ,  G06K19/07749 ,  G06K19/0775 ,  H01L21/67126 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68318 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2924/0002 ,  Y10T156/1089 ,  Y10T156/1093 ,  Y10T156/1712 ,  H01L2924/00

公开(公告)号：EP1920459A4

公开(公告)日：2012-07-25

申请号：EP06768415

申请日：2006-07-27

申请人： SEMICONDUCTOR ENERGY LAB

发明人： TAKAHASHI HIDEKAZU ,  SUGIYAMA EIJI

IPC分类号： H01L21/3205 ,  H01L21/683 ,  H01L23/485 ,  H01L27/12

CPC分类号： H01L21/84 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/6677 ,  H01L2224/0332 ,  H01L2224/0355 ,  H01L2224/0391 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05173 ,  H01L2224/05178 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05188 ,  H01L2224/05339 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/05847 ,  H01L2224/32225 ,  H01L2224/83 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/07802 ,  H01L2924/12044 ,  H01L2924/13069 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device of the present invention is provided including the steps of forming a first conductive layer over a substrate; forming a second conductive layer containing a conductive particle and resin over the first conductive layer; and increasing an area where the first conductive layer and the second conductive layer are in contact with each other by irradiating the second conductive layer with a laser beam. By including the step of laser beam irradiation, the portion where the first conductive layer and the second conductive layer are in contact with each other can be increased and defective electrical connection between the first conductive layer and the second conductive layer can be improved.

公开(公告)号：EP2038818A4

公开(公告)日：2009-11-25

申请号：EP07767462

申请日：2007-06-19

申请人： SEMICONDUCTOR ENERGY LAB

发明人： DOZEN YOSHITAKA ,  AOKI TOMOYUKI ,  TAKAHASHI HIDEKAZU ,  YAMADA DAIKI ,  OGITA KAORI ,  KUSUMOTO NAOTO

IPC分类号： G06K19/077 ,  D21H21/48 ,  G06K19/07 ,  H01L21/336 ,  H01L29/786

CPC分类号： D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.