摘要:
The invention relates to providing a semiconductor device in which a connecting terminal of a chip is prevented from being come off from a land of a circuit board. A semiconductor device includes a substrate 3 on which a plurality of first terminals 31 are formed and a chip 2 having a second terminal 21 electrically coupled to astride at least two first terminals 31 out of the plurality of the first terminals 31.
摘要:
The invention relates to providing a semiconductor device in which a connecting terminal of a chip is prevented from being come off from a land of a circuit board. A semiconductor device includes a substrate 3 on which a plurality of first terminals 31 are formed and a chip 2 having a second terminal 21 electrically coupled to astride at least two first terminals 31 out of the plurality of the first terminals 31.
摘要:
This process for assembling first and second electronic components (50, 52) comprises: producing connecting elements on an assembly face of the first component (50) and producing connecting elements on an assembly face of the second component (52); depositing a liquid layer (70) of curable and electrically insulating material on the assembly face of the first and/or second component; arranging the first and second components (50, 52) one on the other so as to place the connecting elements of the second component facing the connecting elements of the first component; applying a force, in a preset direction (A), to the first and/or second components (50, 52) so as to create electrical interconnects each of which consists of one connecting element (56) of the first component (50) and one connecting element (58) of the second component (52); and curing the curable material (70). The connecting elements (56) of the first component (50) are hollow inserts having an open end and the connecting elements (58) of the second component (52) are solid elements (58) of lower hardness than that of the inserts (56), applying the force leads to the inserts (56) being inserted into the solid elements (58). The geometry of the inserts (56) and the geometry of the solid elements (58), and/or the relative position of the latter during the insertion, are chosen so as to leave a portion of the open end of the inserts (56) free during the insertion. The curable material (70) does not comprise deoxidising flux.
摘要:
The invention relates to an integrated circuit (1), comprising a substrate (10) having a first surface (11) and an opposing second surface (12), wherein a functionalized region (13) is formed at least on the first surface (11) and wherein at least one electrical through-plating (40) is provided as a through-hole (42) which is continuously filled with an electrically conductive material (44) and which runs from the first surface (11) to the second surface (12) through the substrate (10). In order to ensure that the through-plating (40) can be reliably produced and is provided in a space-saving manner, the through-hole (42) has at least one gradation (46) on which a transition occurs from a smaller hole cross-section (d1) on the side of the first surface (11) to a larger hole cross-section (d2) on the side of the second surface (12).
摘要:
A packaged microelectronic assembly includes a microelectronic element (104) joined to a substrate (102, 402). The microelectronic element (104) has a front surface (122) and a plurality of first solid metal posts (110) extending away from the front surface (122). Each of the first posts (110) has a width (W2) in a direction of the front surface (122) and a height (H2) extending from the front surface (122), wherein the height (H2) is at least half of the width (W2). The substrate (102, 402) has a top surface (101, 401) and a plurality of second solid metal posts (108) extending from the top surface (101, 401) and joined to the first solid metal posts (110) by a fusible metal (130), each second post (108) having a second width (W1) in a direction along the top surface (101, 401) and each projecting to a second height (H1) above the top surface (101, 401). The substrate (402) also has conductive interconnects (407) extending through the substrate (402) and electrically connecting terminals at a bottom surface (403) opposite the top surface (401) with the second solid metal posts (108). The plurality of first solid metal posts (110) and the plurality of second solid metal posts (108) are etched metal posts. The posts (110, 108) may have a frustoconical shape defined by the etching process.
摘要:
Ce procédé d'assemblage de deux composants électroniques (12, 16) par insertion d'inserts creux et ouverts (50) dans des éléments pleins convexes (14) de dureté inférieure à celle des inserts, consiste, lors de l'insertion d'un insert (50) dans un élément plein (14), à ce qu'au moins une surface (52) de l'extrémité ouverte (54) de l'insert (50) soit laissée libre de manière à créer un passage de sortie pour des gaz contenus dans l'insert (50).
摘要:
A leadless package semiconductor device has a top surface, a bottom surface opposite to the top surface, and multiple sidewalls between the top and bottom surfaces. At least one connection pad is disposed on the bottom surface. The connection pad includes a connection portion and at least one protrusion portion that extends from the connection portion and away from the bottom surface such that the protrusion portion and the connection portion surround a space on the bottom surface.
摘要:
A packaged microelectronic assembly includes a microelectronic element (104) joined to a substrate (102, 402). The microelectronic element (104) has a front surface (122) and a plurality of first solid metal posts (110) extending away from the front surface (122). Each of the first posts (110) has a width (W2) in a direction of the front surface (122) and a height (H2) extending from the front surface (122), wherein the height (H2) is at least half of the width (W2). The substrate (102, 402) has a top surface (101, 401) and a plurality of second solid metal posts (108) extending from the top surface (101, 401) and joined to the first solid metal posts (110) by a fusible metal (130), each second post (108) having a second width (W1) in a direction along the top surface (101, 401) and each projecting to a second height (H1) above the top surface (101, 401). The substrate (402) also has conductive interconnects (407) extending through the substrate (402) and electrically connecting terminals at a bottom surface (403) opposite the top surface (401) with the second solid metal posts (108). The plurality of first solid metal posts (110) and the plurality of second solid metal posts (108) are etched metal posts. The posts (110, 108) may have a frustoconical shape defined by the etching process.
摘要:
Pillars having a directed compliance geometry are arranged to couple a semiconductor die to a substrate. The direction of maximum compliance of each pillar may be aligned with the direction of maximum stress caused by unequal thermal expansion and contraction of the semiconductor die and substrate. Pillars may be designed and constructed with various shapes having particular compliance characteristics and particular directions of maximum compliance. The shape and orientation of the pillars may be selected as a function of their location on a die to accommodate the direction and magnitude of stress at their location. A method includes fabricating pillars with particular shapes by patterning to increase surface of materials upon which the pillar is plated or deposited.