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公开(公告)号：EP3443146B1
公开(公告)日：2019-12-25
申请号：EP17725581.7
申请日：2017-05-23
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公开(公告)号：EP3186413B1
公开(公告)日：2019-02-06
申请号：EP15753055.1
申请日：2015-08-21
发明人： BREITFELDER, Jana , RÜTHER, Robert , KURTZ, Olaf
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4.发明公开Composition, use thereof and method for electrodepositing gold containing layers 审中-公开组合物，其用途和方法含金层的电沉积
公开(公告)号：EP2990507A1
公开(公告)日：2016-03-02
申请号：EP14182083.7
申请日：2014-08-25
摘要： The present invention relates to a composition and method for electrodepositing gold containing layers using the composition and the use of mercapto triazole as additive. The composition contains a mercapto-triazole compound which acts as an anti-immersion additive. The composition and method are suited for depositing functional or hard gold or gold alloys that can be applied in the industry as contact material of electrical connectors for high reliability applications.
摘要翻译： 本发明涉及一种用于电沉积使用该组合物和使用巯基三唑的作为添加剂的含有金层的组合物和方法。 所述组合物含有巯基三唑化合物用作抗浸没添加剂。 该组合物和方法适合用于沉积官能或硬质金或金合金也可以在工业中应用作为用于高可靠性应用的电连接器的接触材料。
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公开(公告)号：EP2879173A2
公开(公告)日：2015-06-03
申请号：EP13194235.1
申请日：2013-11-25
发明人： Cheng, Shih Jye , Lu, Tung Bao
IPC分类号： H01L23/485 , H01L21/60 , C25D3/64 , C25D3/48
CPC分类号： H01L21/4825 , H01L23/15 , H01L23/49816 , H01L23/4985 , H01L23/49866 , H01L23/49894 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05027 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11825 , H01L2224/11848 , H01L2224/11901 , H01L2224/13005 , H01L2224/13082 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13644 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/814 , H01L2224/8159 , H01L2224/8169 , H01L2224/81744 , H01L2224/81815 , H01L2224/8185 , H01L2224/81862 , H01L2224/83104 , H01L2924/01322 , H01L2924/15788 , H01L2924/351 , H01L2924/01079 , H01L2924/01046 , H01L2924/00014 , H01L2924/01074 , H01L2924/01082 , H01L2924/00012 , H01L2924/0665 , H01L2924/0655 , H01L2924/206 , H01L2924/014 , H01L2924/00 , H01L2224/1146
摘要： A semiconductor structure includes a semiconductor device (100), a conductive pad (102) on the semiconductor device (100), and a Ag 1-x Y x alloy bump (101) over the conductive pad (102). The Y of the Ag 1-x Y x bump (101) comprises metals forming complete solid solution with Ag at arbitrary weight percentage (Au and/or Pd), and the x of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.005 to about 0.25. A difference between standard deviation and mean value of a grain size distribution of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.2 µm to about 0.4 µm. An average grain size of the Ag 1-x Y x alloy bump (101) on a longitudinal cross sectional plane is in a range of from about 0.5 µm to about 1.5 µm. The alloy bump (101) is formed by electroplating.
摘要翻译： 一种半导体结构包括半导体器件（100），半导体器件（100）上的导电焊盘（102）和导电焊盘（102）上的Ag1-xYx合金凸点（101）。 Ag1-xYx凸块（101）的Y包含与Ag以任意重量百分比（Au和/或Pd）形成完全固溶体的金属，并且Ag1-xYx合金凸块（101）的x的范围为 约0.005至约0.25。 Ag1-xYx合金凸块（101）的标准偏差与晶粒尺寸分布的平均值之差在约0.2μm至约0.4μm的范围内。 纵向截面上的Ag 1-x Y x合金凸块（101）的平均晶粒尺寸在约0.5μm至约1.5μm的范围内。 合金凸块（101）通过电镀形成。
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7.发明公开
公开(公告)号：EP2653590A2
公开(公告)日：2013-10-23
申请号：EP11813915.3
申请日：2011-12-09
发明人： LAPIDUS LAVINE, Gretchen Terri , ALONSO GÓMEZ, Alejandro Rafael , BENAVIDES PEREZ, Ricardo , SILVA ALONSO, Javier Alejandro , LARA VALENZUELA, Carlos
摘要： The present invention is related to the mining and mineral or materials treatment industries that deal with gold and silver. Specifically, it is related to the process to recover gold and silver from thiosulfate or thiourea solutions, with an electrolysis that occurs simultaneously on both the anode and cathode. The advantages of the present invention, relative to the current state of technology, reside in the increased velocity and greatly reduced energy consumption in relation to those found in conventional electrolytic cells.
摘要翻译： 本发明涉及采矿和矿物材料或处理行业也应对黄金和白银。 具体而言，它涉及处理从硫代硫酸盐或硫脲溶液中回收金银，与电解做的同时在阳极和阴极同时发生。 本发明的相对于目前的技术状态的优点，驻留在增加的速度，大大降低了能耗相对于那些在常规的电解细胞中发现。
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公开(公告)号：EP2309036B1
公开(公告)日：2013-08-28
申请号：EP10178645.7
申请日：2010-09-23
发明人： Zhang, Wan , Guebey, Jonas , Egli, Andre
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9.发明公开METHOD AND APPARATUS FOR MAINTAINING PARALLELISM OF LAYERS AND/OR ACHIEVING DESIRED THICKNESSES OF LAYERS DURING THE ELECTROCHEMICAL FABRICATION OF STRUCTURES 审中-公开方法和设备提供Layers的并联和/或为了达到分层损伤所需的厚度电化学过程中生产结构
公开(公告)号：EP1711961A4
公开(公告)日：2008-10-22
申请号：EP05704921
申请日：2005-01-03
申请人： MICROFABRICA INC
发明人： KUMAR ANANDA H , COHEN ADAM L , LOCKARD MICHAEL S
IPC分类号： C25D1/00 , B05D1/38 , B24B49/00 , B81C1/00 , C08K3/00 , C25D3/30 , C25D3/38 , C25D3/48 , C25D5/02 , C25D5/10 , C25D15/02 , C25D21/12 , G01B5/06 , G01B5/28 , H01L21/288 , H01L21/301 , H01L21/302 , H01L21/3105 , H01L21/4763 , H01L21/768
CPC分类号： C25D5/48 , B33Y10/00 , B81C1/00492 , B81C99/0065 , B81C2201/0104 , B81C2201/0197 , C25D1/00 , C25D1/003 , C25D5/022 , C25D5/10 , C25D21/12 , H01L21/2885 , H01L21/76885 , Y10T156/1052
摘要： Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (98) (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture (292, 294, 296, 298) that ensures precise heights of deposited materials relative to an initial surface of a substrate (82), relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine (408).
摘要翻译： 本发明的一些实施例中用于制造电化学多层结构（E. G.尺度或微米结构）具有改进的终点检测和并行维护材料（E. G.层）没有被在电化学制造工艺平坦化提供的方法和装置。 一些方法涉及平整过程中使用夹具确实保证没有材料的平坦化面给定的公差范围内平行于其他存放图。 一些方法涉及使用终点检测器具的那样沉积的材料相对的保证了精确的高度，以一个基底，相对于第一沉积层，或相对于在制造过程中形成的一些其他层的初始表面上。 在一些实施例中的平坦化可以通过研磨而其它实施例可以使用金刚石飞切机好发。
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10.发明授权
公开(公告)号：EP1423557B1
公开(公告)日：2004-12-22
申请号：EP02774881.3
申请日：2002-08-22
摘要： The invention concerns an aqueous electrolytic solution for electrochemical deposition of gold or of its alloys comprising at least a soluble gold compound designed for electrolytic deposition and, optionally at least a secondary metal compound designed for co-deposition in the form of a gold alloy. The invention is characterised in that it further comprises 0.3 to 3 moles per mole of gold contained in the electrolytic solution of an organic compound comprising one or two aldehyde functions, said organic compound being: either glyoxal, or an organic compound comprising 3 to 20 carbon atoms and one or two aldehyde functions in the form: of a saturated or unsaturated, linear or branched aliphatic group, or a group containing at least a saturated, unsaturated or aromatic cycle, said organic compound may further include at least a heteroelement selected among oxygen, nitrogen, sulphur and phosphorus or be in the form of a salt, in particular a sulphonate. The presence of said organic compound enables to increase the speed of electrodeposition of gold or of its alloys and/or to decrease contact resistance. The invention also concerns a method for electrodeposition of gold or of a gold alloy comprising electrolysis of such an electrolytic solution.
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