公开(公告)号：US20170263861A1

公开(公告)日：2017-09-14

申请号：US15365977

申请日：2016-12-01

Applicant: Jeong-heon PARK ,  Se-chung OH ,  Byoung-jae BAE ,  Jong-chul PARK

Inventor： Jeong-heon PARK ,  Se-chung OH ,  Byoung-jae BAE ,  Jong-chul PARK

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of fabricating a memory device, the method including forming a first magnetization layer; forming a tunnel barrier layer on the first magnetization layer; forming a second magnetization layer on the tunnel barrier layer; forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; and forming a boron oxide in a sidewall of the MTJ structure by implanting boron.

公开(公告)号：US08680500B2

公开(公告)日：2014-03-25

申请号：US13495178

申请日：2012-06-13

Applicant: Gyu-Hwan Oh ,  Byoung-Jae Bae ,  Dong-Hyun Im ,  Doo-Hwan Park

Inventor： Gyu-Hwan Oh ,  Byoung-Jae Bae ,  Dong-Hyun Im ,  Doo-Hwan Park

IPC: H01L29/02 ,  H01L47/00 ,  H01L27/148 ,  H01L29/768

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683

Abstract: A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on the lower electrode, and an upper electrode on the phase change layer pattern.

Abstract translation: 相变存储器件包括衬底上的杂质区域，有源区域中的杂质区域，至少部分地埋在杂质区域中的金属硅化物图案，杂质区域上的二极管，二极管上的下电极， 下电极上的相变层图案，以及相变层图案上的上电极。

公开(公告)号：US08340128B2

公开(公告)日：2012-12-25

申请号：US12852791

申请日：2010-08-09

Applicant: Yang-Ick Joo ,  Soeng-Hun Kim ,  Byoung-Jae Bae

Inventor： Yang-Ick Joo ,  Soeng-Hun Kim ,  Byoung-Jae Bae

IPC: H04J3/16

CPC classification number: H04W28/065

Abstract: An apparatus and method for generating and parsing a MAC PDU in a mobile communication system are provided in which LCIDs of MAC SDUs to be multiplexed are checked, the length of an LF is determined for each of the MAC SDUs, referring to LF lengths predetermined for the LCIDs, a MAC header including the LCIDs and LFs of the determined lengths for the MAC SDUs is generated, and a MAC PDU is generated by attaching the MAC header to payload including the MAC SDUs. During the MAC header generation, if a padding size required for the MAC PDU generation calculated taking into account the absence of a last LF in the MAC header is larger than the length of the last LF, the last LF is included in the MAC header, the required padding size is recalculated, taking into account the inclusion of the last LF, and a padding is added according to the re-calculated padding size.

Abstract translation: 提供了一种用于在移动通信系统中生成和解析MAC PDU的装置和方法，其中检查要复用的MAC SDU的LCID，针对每个MAC SDU确定LF的长度，参考为 产生LCID，包括MAC SDU确定的长度的LCID和LF的MAC头，并且通过将MAC报头附加到包括MAC SDU的有效载荷来生成MAC PDU。 在MAC报头生成期间，如果考虑到MAC报头中没有最后一个LF计算的MAC PDU生成所需的填充大小大于最后一个LF的长度，则最后一个LF包含在MAC报头中， 考虑到最后一个LF的包含，重新计算所需的填充大小，并根据重新计算的填充大小添加填充。

公开(公告)号：US20100303095A1

公开(公告)日：2010-12-02

申请号：US12852791

申请日：2010-08-09

Applicant: Yang-Ick JOO ,  Soeng-Hun KIM ,  Byoung-Jae BAE

Inventor： Yang-Ick JOO ,  Soeng-Hun KIM ,  Byoung-Jae BAE

IPC: H04L29/02

CPC classification number: H04W28/065

Abstract: An apparatus and method for generating and parsing a MAC PDU in a mobile communication system are provided in which LCIDs of MAC SDUs to be multiplexed are checked, the length of an LF is determined for each of the MAC SDUs, referring to LF lengths predetermined for the LCIDs, a MAC header including the LCIDs and LFs of the determined lengths for the MAC SDUs is generated, and a MAC PDU is generated by attaching the MAC header to payload including the MAC SDUs. During the MAC header generation, if a padding size required for the MAC PDU generation calculated taking into account the absence of a last LF in the MAC header is larger than the length of the last LF, the last LF is included in the MAC header, the required padding size is recalculated, taking into account the inclusion of the last LF, and a padding is added according to the re-calculated padding size.

Abstract translation: 提供了一种用于在移动通信系统中生成和解析MAC PDU的装置和方法，其中检查要复用的MAC SDU的LCID，针对每个MAC SDU确定LF的长度，参考为 产生LCID，包括MAC SDU确定的长度的LCID和LF的MAC头，并且通过将MAC报头附加到包括MAC SDU的有效载荷来生成MAC PDU。 在MAC报头生成期间，如果考虑到MAC报头中没有最后一个LF计算的MAC PDU生成所需的填充大小大于最后一个LF的长度，则最后一个LF包含在MAC报头中， 考虑到最后一个LF的包含，重新计算所需的填充大小，并根据重新计算的填充大小添加填充。

公开(公告)号：US20050064605A1

公开(公告)日：2005-03-24

申请号：US10898564

申请日：2004-07-26

Applicant: Moon-Sook Lee ,  Byoung-Jae Bae

Inventor： Moon-Sook Lee ,  Byoung-Jae Bae

IPC: C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/00 ,  H01L21/8242

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/452 ,  C23C16/45514

Abstract: Metal organic chemical vapor deposition (MOCVD) may be utilized in methods of forming an (111) oriented PZT ferroelectric layer at a lower temperature, a ferroelectric capacitor and methods of fabricating, and a ferroelectric memory device using the same may be provided. Using the metal organic chemical vapor deposition, ferroelectric layers, capacitors, and memory devices, which may be fabricated and may have (111) preferred oriented crystal growth.

Abstract translation: 金属有机化学气相沉积（MOCVD）可以用于在较低温度下形成（111）取向的PZT铁电体层的方法，铁电电容器和制造方法，并且可以提供使用该方法的铁电存储器件。 使用金属有机化学气相沉积，铁电层，电容器和存储器件，其可以被制造并且可以具有（111）优选的取向晶体生长。

公开(公告)号：US09166746B2

公开(公告)日：2015-10-20

申请号：US12730629

申请日：2010-03-24

Applicant: Byoung-Jae Bae ,  Soeng-Hun Kim ,  Sung-Man Han ,  Jun-Sung Lee ,  Gert-Jan Van Lieshout

Inventor： Byoung-Jae Bae ,  Soeng-Hun Kim ,  Sung-Man Han ,  Jun-Sung Lee ,  Gert-Jan Van Lieshout

IPC: H04L1/18

CPC classification number: H04L1/1835 ,  H04L1/1812 ,  H04L1/1816 ,  H04L1/1845

Abstract: An operating method and an apparatus according to data duplicate retransmission in a mobile communication system are provided. A method of a User Equipment (UE) according to data duplicate retransmission in a mobile communication system includes storing a Media Access Control Protocol Data Unit (MAC PDU) received from an Evolved Node B (ENB) in a soft buffer, decoding the MAC PDU, determining whether the decoding is a first successful decoding of data of the corresponding soft buffer, and determining whether to forward the decoded MAC PDU to an upper layer according to the determination result.

Abstract translation: 提供了一种在移动通信系统中根据数据重复重传的操作方法和装置。 根据移动通信系统中的数据重复发送的用户设备（UE）的方法包括将从演进节点B（ENB）接收的媒体接入控制协议数据单元（MAC PDU）存储在软缓冲器中，对MAC PDU进行解码 确定解码是否是对应的软缓冲器的数据的第一次成功解码，以及根据确定结果确定是否将解码的MAC PDU转发到上层。

公开(公告)号：US20110300684A1

公开(公告)日：2011-12-08

申请号：US13084654

申请日：2011-04-12

Applicant: Byoung-Deog CHOI ,  Byoung-Jae BAE ,  Jeong-Hee PARK

Inventor： Byoung-Deog CHOI ,  Byoung-Jae BAE ,  Jeong-Hee PARK

IPC: H01L21/8239

CPC classification number: H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

Abstract: A method of fabricating a phase change memory having a unit memory cell is described. The unit memory cell includes a phase change element connected to a corresponding vertical cell diode. The phase change element is formed from a phase change material layer formed on an interlayer dielectric layer including a via hole, and etched using a plasma formed from a plasma gas having a molecular weight of 17 or less to form a respective phase change material pattern in the via hole.

Abstract translation: 描述制造具有单元存储单元的相变存储器的方法。 单元存储单元包括连接到对应的垂直单元二极管的相变元件。 相变元件由形成在包括通孔的层间电介质层上的相变材料层形成，并使用由分子量为17以下的等离子体气体形成的等离子体进行蚀刻，形成各自的相变材料图案 通孔。

公开(公告)号：US20110180774A1

公开(公告)日：2011-07-28

申请号：US13082557

申请日：2011-04-08

Applicant: Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-Il Lee ,  Hye-Young Park

Inventor： Young-Lim Park ,  Sung-Lae Cho ,  Byoung-Jae Bae ,  Jin-Il Lee ,  Hye-Young Park

IPC: H01L45/00

CPC classification number: H01L45/144 ,  C23C16/34 ,  C23C16/45536 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/143 ,  H01L45/1616 ,  H01L45/1683

Abstract: Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.

Abstract translation: 提供了一种相变存储器件和用于形成相变存储器件的方法。 该方法包括通过向基底提供反应性基团来形成相变材料层。 反应性基团可以包括相变材料和氮的前体。

公开(公告)号：US07867880B2

公开(公告)日：2011-01-11

申请号：US11772494

申请日：2007-07-02

Applicant: Hye-young Park ,  Sung-lae Cho ,  Byoung-jae Bae ,  Jin-il Lee ,  Ji-eun Lim ,  Young-lim Park

Inventor： Hye-young Park ,  Sung-lae Cho ,  Byoung-jae Bae ,  Jin-il Lee ,  Ji-eun Lim ,  Young-lim Park

IPC: H01L21/205

CPC classification number: H01L45/1233 ,  C07F7/30 ,  C23C16/18 ,  C23C16/305 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683 ,  Y10T428/31678

Abstract: The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

Abstract translation: 本发明提供用于低温沉积的金属前体。 金属前体包括金属环化合物，其包含至少一种金属作为形成环的多个元素之一。 还提供了形成金属薄层的方法和制造包括使用金属前体的相变存储器件。

公开(公告)号：US07585683B2

公开(公告)日：2009-09-08

申请号：US11778880

申请日：2007-07-17

Applicant: Dong-Hyun Im ,  Byoung-Jae Bae ,  Ik-Soo Kim ,  Jang-Eun Heo ,  Choong-Man Lee ,  Dong-Chul Yoo

Inventor： Dong-Hyun Im ,  Byoung-Jae Bae ,  Ik-Soo Kim ,  Jang-Eun Heo ,  Choong-Man Lee ,  Dong-Chul Yoo

IPC: H01L21/00

CPC classification number: H01L21/02197 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/31691 ,  H01L28/55

Abstract: A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

Abstract translation: 制造铁电体元件的方法包括在反应室中的基板上形成铁电体层。 在反应室中提供惰性气体，同时从其中卸载衬底，从而基本上抑制铁电层上的杂质层的形成。