公开(公告)号：US20150348798A1

公开(公告)日：2015-12-03

申请号：US14825846

申请日：2015-08-13

申请人： Yun-Jeong KIM ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

发明人： Yun-Jeong KIM ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

IPC分类号： H01L21/3105 ,  H01L27/115 ,  H01L21/311

CPC分类号： H01L21/31058 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582

摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

摘要翻译： 公开了一种用于抛光有机层的化学机械抛光（CMP）浆料组合物和使用其形成半导体器件的方法。 CMP浆料组合物可以包含0.001重量％至5重量％的氧化物抛光颗粒; 0.1至5重量％的氧化剂; 0〜5重量％的抛光调节剂; 0〜3重量％的表面活性剂; 0至3重量％的pH调节剂; 和79-99889重量％的去离子水。 使用CMP浆料组合物可以使无硅有机层相对于氧化物层以高于6:1的选择性进行抛光。

公开(公告)号：US20090042494A1

公开(公告)日：2009-02-12

申请号：US12187007

申请日：2008-08-06

申请人： Sung-Taek Moon ,  Kyoung-Moon Kang ,  Bong-Su Ahn ,  Nam-Soo Kim ,  Gi-Sik Hong

发明人： Sung-Taek Moon ,  Kyoung-Moon Kang ,  Bong-Su Ahn ,  Nam-Soo Kim ,  Gi-Sik Hong

IPC分类号： B24B53/02 ,  B24D18/00 ,  C25D9/04 ,  B24B53/00

CPC分类号： C25D7/00 ,  B24B53/017 ,  B24B53/02 ,  B24D18/0018 ,  C23C26/00 ,  C25D13/02

摘要： A pad conditioner of semiconductor wafer polishing apparatus and a pad conditioner manufacturing method thereof are provided with a uniform conditioning for a polishing pad of a polishing apparatus, the polishing apparatus being for evenly planarizing a metal layer formed on the surface of wafer in a semiconductor device manufacturing processor. The pad conditioner may include a substrate constructed of a flat plate of disk shape, a coating part formed with a given thickness on the substrate, and a plurality of protrusion parts formed on the coating part, the plurality of protrusion parts having a plurality of polishing members based on the same size in a predetermined grouping or pattern.

摘要翻译： 半导体晶片抛光装置的垫调节器及其垫调节器的制造方法为研磨装置的抛光垫设置均匀的调理装置，该抛光装置用于在半导体装置中均匀地平坦化形成在晶片表面上的金属层 制造处理器。 垫调节器可以包括由盘形平板，在基板上形成给定厚度的涂层部分和形成在涂层部分上的多个突起部分构成的基板，所述多个突出部分具有多个抛光 基于相同尺寸的成员以预定的分组或模式。

公开(公告)号：US09343326B2

公开(公告)日：2016-05-17

申请号：US14825846

申请日：2015-08-13

申请人： Yun-Jeong Kim ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

发明人： Yun-Jeong Kim ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

IPC分类号： H01L21/302 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/115

CPC分类号： H01L21/31058 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582

摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

摘要翻译： 公开了一种用于抛光有机层的化学机械抛光（CMP）浆料组合物和使用其形成半导体器件的方法。 CMP浆料组合物可以包含0.001重量％至5重量％的氧化物抛光颗粒; 0.1至5重量％的氧化剂; 0〜5重量％的抛光调节剂; 0〜3重量％的表面活性剂; 0至3重量％的pH调节剂; 和79-99889重量％的去离子水。 使用CMP浆料组合物可以使无硅有机层相对于氧化物层以高于6:1的选择性进行抛光。

公开(公告)号：US20150021513A1

公开(公告)日：2015-01-22

申请号：US14311857

申请日：2014-06-23

申请人： Yun-Jeong KIM ,  Sang-Kyun KIM ,  Kwang-Bok KIM ,  Ye-Hwan KIM ,  Jung-Sik CHOI ,  Choong-Ho HAN ,  Gi-Sik HONG

发明人： Yun-Jeong KIM ,  Sang-Kyun KIM ,  Kwang-Bok KIM ,  Ye-Hwan KIM ,  Jung-Sik CHOI ,  Choong-Ho HAN ,  Gi-Sik HONG

IPC分类号： C09K13/06 ,  C09K13/00

CPC分类号： H01L21/31058 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582

摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

公开(公告)号：US08314028B2

公开(公告)日：2012-11-20

申请号：US11853735

申请日：2007-09-11

申请人： Gi-Sik Hong ,  Dong-Jun Lee ,  Nam-Soo Kim ,  Kyoung-Moon Kang

发明人： Gi-Sik Hong ,  Dong-Jun Lee ,  Nam-Soo Kim ,  Kyoung-Moon Kang

IPC分类号： H01L21/461 ,  C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/31053

摘要： In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water. The slurry composition including the nonionic surfactant and the polish accelerating agent may be used for speedily polishing a stepped upper portion of a silicon oxide layer, and may also enable a lower portion of the silicon oxide layer to function as a polish stop layer.

摘要翻译： 在浆料组合物和使用浆料组合物抛光层的方法中，浆料组合物包括约3-20重量％的研磨剂，约0.1-3重量％的离子表面活性剂，约0.01至0.1重量％ 重量百分比的非离子表面活性剂，约0.01至1％重量的包含氨基酸化合物的抛光促进剂，以及剩余的包含碱性pH控制剂和水的水溶液。 包括非离子表面活性剂和抛光促进剂的浆料组合物可以用于快速抛光氧化硅层的阶梯状上部，并且还可以使氧化硅层的下部用作抛光停止层。

公开(公告)号：US20080081542A1

公开(公告)日：2008-04-03

申请号：US11853735

申请日：2007-09-11

申请人： Gi-Sik HONG ,  Dong-Jun LEE ,  Nam-Soo KIM ,  Kyoung-Moon KANG

发明人： Gi-Sik HONG ,  Dong-Jun LEE ,  Nam-Soo KIM ,  Kyoung-Moon KANG

IPC分类号： B24B29/02 ,  B24D3/04

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/31053

摘要： In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water. The slurry composition including the nonionic surfactant and the polish accelerating agent may be used for speedily polishing a stepped upper portion of a silicon oxide layer, and may also enable a lower portion of the silicon oxide layer to function as a polish stop layer.

摘要翻译： 在浆料组合物和使用浆料组合物抛光层的方法中，浆料组合物包括约3-20重量％的研磨剂，约0.1-3重量％的离子表面活性剂，约0.01至0.1重量％ 重量百分比的非离子表面活性剂，约0.01至1％重量的包含氨基酸化合物的抛光促进剂，以及剩余的包含碱性pH控制剂和水的水溶液。 包括非离子表面活性剂和抛光促进剂的浆料组合物可以用于快速抛光氧化硅层的阶梯状上部，并且还可以使氧化硅层的下部用作抛光停止层。