摘要:
A composition for preparing a halogen-free resin is provided, the composition including a halogen-free phosphorated epoxy, a urethane-modified copolyester, a curing agent, a filler, a surfactant, and a solvent. A halogen-free prepreg is also provided, including a glass fabric cloth and a halogen-free resin layer on the glass fabric. The halogen-free resin layer is made from the foregoing halogen-free resin.
摘要:
An integrated defect yield management and query system for a semiconductor wafer fabrication process is disclosed. A local area network connects various testing devices for testing defect conditions of wafers, a defect yield management server and a client device. After inspection, these devices generate a plurality of process records corresponding to each of the semiconductor wafers. The defect yield management server retrieves the process records through the local area network. These process records are stored in a database divided into a plurality of fields, wherein each field corresponds to a specific defect property of the semiconductor wafers. Therefore, these acquired on-line data and their related history records can be accessed by using an inquiring interface, and the client device can effectively poll the process records stored in the database of the defect yield management server.
摘要:
The present invention discloses a cycle-count-accurate (CCA) processor modeling, which can achieve high simulation speeds while maintaining timing accuracy of the system simulation. The CCA processor modeling includes a pipeline subsystem model and a cache subsystem model with accurate cycle with accurate cycle count information and guarantees accurate timing and functional behaviors on processor interface. The CCA processor modeling further includes a branch predictor and a bus interface (BIF) to predict the branch of pipeline execution behavior (PEB) and to simulate the data accesses between the processor and the external components via an external bus, respectively. The experimental results show that the CCA processor modeling performs 50 times faster than the corresponding Cycle-accurate (CA) model while providing the same cycle count information as the target RTL model.
摘要:
A varnish includes resin and composite curing agent. The composite curing agent includes curing agent of polyphenylene methylphosphonate resin and curing agent of phenol resin. Glass fabric cloth is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low absorbent ability. Furthermore, the composite curing agent can be provided for higher curing rate.
摘要:
A halogen-free varnish includes (A) resin, (B) curing agent, (C) flame inhibitor (flame-retarding agent), (D) accelerator and (E) additives. Resin of (A) has novolac epoxy resin, DOPO-CNE and DOPO-HQ-CNE. Curing agent of (B) includes Benzoxazine resin and phenol novolac resin. Glass fabric cloth is dipped into the halogen-free varnish so as to form a prepreg with better thermal stability, anti-flammability, low absorbent ability and higher curing rate. Furthermore, the prepreg has more toughness.
摘要:
A halogen-free varnish includes epoxy resin, composite curing agent, condensed phosphate, and filler. The composite curing agent includes Benzoxazine (BZ) resin and amino triazine novolac (ATN) resin. The filler has aluminium hydroxide and silica. Glass fabric is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low moisture absorption.
摘要:
A varnish includes resin and composite curing agent. The composite curing agent includes curing agent of polyphenylene methylphosphonate resin and curing agent of phenol resin. Glass fabric cloth is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low absorbent ability. Furthermore, the composite curing agent can be provided for higher curing rate.
摘要:
A method for fabricating an improved connection between active device regions in silicon, to overlying metallization levels, has been developed. A LPCVD tungsten contact plug process, which results in optimum coplanarity between the top surface of the tungsten plug and the surrounding insulator surface, has been created.