VARNISH COMPOSITION, AND PRE-IMPREGNATED MANUFACTURE THEREOF
    1.
    发明申请
    VARNISH COMPOSITION, AND PRE-IMPREGNATED MANUFACTURE THEREOF 有权
    VARNISH组合物及其预先制备

    公开(公告)号:US20120136094A1

    公开(公告)日:2012-05-31

    申请号:US12955382

    申请日:2010-11-29

    IPC分类号: C08K5/5313

    摘要: A varnish composition includes composition (A): an epoxy resin, composition (B): a hardener, composition (C): an accelerator, composition (D): phosphor-containing flame retardant, and composition (E): fillers, wherein composition (A) includes composition (A-1): phosphor-containing epoxy resin, phosphor-containing and silicon-containing epoxy resin, or a mixture thereof; composition (A-2): dicyclopentadiene epoxy resin; and composition (A-3): oxazolidone epoxy resin.

    摘要翻译: 清漆组合物包括组合物(A):环氧树脂,组合物(B):硬化剂,组合物(C):促进剂,组合物(D):含磷阻燃剂和组合物(E):其中组合物 (A)包括组合物(A-1):含荧光体的环氧树脂,含荧光体的含硅环氧树脂或其混合物; 组合物(A-2):二环戊二烯环氧树脂; (A-3):恶唑烷酮环氧树脂。

    Integrated defect yield management and query system
    3.
    发明授权
    Integrated defect yield management and query system 失效
    综合缺陷产量管理与查询系统

    公开(公告)号:US06314379B1

    公开(公告)日:2001-11-06

    申请号:US08984882

    申请日:1997-12-04

    IPC分类号: G06F1900

    CPC分类号: H01L22/20 G01R31/2894

    摘要: An integrated defect yield management and query system for a semiconductor wafer fabrication process is disclosed. A local area network connects various testing devices for testing defect conditions of wafers, a defect yield management server and a client device. After inspection, these devices generate a plurality of process records corresponding to each of the semiconductor wafers. The defect yield management server retrieves the process records through the local area network. These process records are stored in a database divided into a plurality of fields, wherein each field corresponds to a specific defect property of the semiconductor wafers. Therefore, these acquired on-line data and their related history records can be accessed by using an inquiring interface, and the client device can effectively poll the process records stored in the database of the defect yield management server.

    摘要翻译: 公开了一种用于半导体晶片制造工艺的综合缺陷产量管理和查询系统。 局域网连接各种测试设备,用于测试晶片的缺陷状况,缺陷产量管理服务器和客户端设备。 在检查之后,这些装置产生对应于每个半导体晶片的多个处理记录。 缺陷产出管理服务器通过局域网检索进程记录。 这些处理记录被存储在分成多个场的数据库中,其中每个场对应于半导体晶片的特定缺陷特性。 因此,这些获取的在线数据及其相关历史记录可以通过使用查询界面来访问,并且客户端设备可以有效地轮询存储在缺陷产量管理服务器的数据库中的过程记录。

    Tool grip
    4.
    外观设计
    Tool grip 失效
    工具夹

    公开(公告)号:USD448265S1

    公开(公告)日:2001-09-25

    申请号:US29127279

    申请日:2000-08-04

    申请人: Li-Chun Chen

    设计人: Li-Chun Chen

    Cycle-Count-Accurate (CCA) Processor Modeling for System-Level Simulation
    5.
    发明申请
    Cycle-Count-Accurate (CCA) Processor Modeling for System-Level Simulation 审中-公开
    用于系统级仿真的循环计数精确(CCA)处理器建模

    公开(公告)号:US20120185231A1

    公开(公告)日:2012-07-19

    申请号:US13008921

    申请日:2011-01-19

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5022 G06F2217/68

    摘要: The present invention discloses a cycle-count-accurate (CCA) processor modeling, which can achieve high simulation speeds while maintaining timing accuracy of the system simulation. The CCA processor modeling includes a pipeline subsystem model and a cache subsystem model with accurate cycle with accurate cycle count information and guarantees accurate timing and functional behaviors on processor interface. The CCA processor modeling further includes a branch predictor and a bus interface (BIF) to predict the branch of pipeline execution behavior (PEB) and to simulate the data accesses between the processor and the external components via an external bus, respectively. The experimental results show that the CCA processor modeling performs 50 times faster than the corresponding Cycle-accurate (CA) model while providing the same cycle count information as the target RTL model.

    摘要翻译: 本发明公开了一种循环计数精确(CCA)处理器建模,可以实现高仿真速度,同时保持系统仿真的定时精度。 CCA处理器建模包括管道子系统模型和具有精确周期的缓存子系统模型,具有精确的周期计数信息,并保证处理器接口上的精确时序和功能行为。 CCA处理器建模还包括分支预测器和总线接口(BIF),以预测流水线执行行为(PEB)的分支,并分别通过外部总线模拟处理器与外部组件之间的数据访问。 实验结果表明,CCA处理器建模比相应的周期精确(CA)模型快50倍,同时提供与目标RTL模型相同的周期计数信息。

    VARNISH, PREPREG, AND SUBSTRATE THEREOF
    7.
    发明申请
    VARNISH, PREPREG, AND SUBSTRATE THEREOF 有权
    VARNISH,PREPREG及其基础

    公开(公告)号:US20110097587A1

    公开(公告)日:2011-04-28

    申请号:US12605368

    申请日:2009-10-25

    申请人: Li-Chun Chen

    发明人: Li-Chun Chen

    IPC分类号: B32B17/10 C08L63/00

    摘要: A halogen-free varnish includes (A) resin, (B) curing agent, (C) flame inhibitor (flame-retarding agent), (D) accelerator and (E) additives. Resin of (A) has novolac epoxy resin, DOPO-CNE and DOPO-HQ-CNE. Curing agent of (B) includes Benzoxazine resin and phenol novolac resin. Glass fabric cloth is dipped into the halogen-free varnish so as to form a prepreg with better thermal stability, anti-flammability, low absorbent ability and higher curing rate. Furthermore, the prepreg has more toughness.

    摘要翻译: 无卤清漆包括(A)树脂,(B)固化剂,(C)阻燃剂(阻燃剂),(D)促进剂和(E)添加剂。 (A)的树脂具有酚醛环氧树脂,DOPO-CNE和DOPO-HQ-CNE。 (B)的固化剂包括苯并恶嗪树脂和酚醛清漆树脂。 将玻璃织物布浸入无卤清漆中,形成具有更好的热稳定性,抗燃性,低吸水能力和较高固化速度的预浸料。 此外,预浸料具有更多的韧性。

    Halogen-free varnish and prepreg thereof
    8.
    发明授权
    Halogen-free varnish and prepreg thereof 有权
    无卤素清漆及其预浸料

    公开(公告)号:US07842401B2

    公开(公告)日:2010-11-30

    申请号:US12409850

    申请日:2009-03-24

    申请人: Li-Chun Chen

    发明人: Li-Chun Chen

    IPC分类号: B32B15/092

    摘要: A halogen-free varnish includes epoxy resin, composite curing agent, condensed phosphate, and filler. The composite curing agent includes Benzoxazine (BZ) resin and amino triazine novolac (ATN) resin. The filler has aluminium hydroxide and silica. Glass fabric is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low moisture absorption.

    摘要翻译: 无卤清漆包括环氧树脂,复合固化剂,缩合磷酸盐和填料。 复合固化剂包括苯并恶嗪(BZ)树脂和氨基三嗪酚醛清漆(ATN)树脂。 填料具有氢氧化铝和二氧化硅。 将玻璃织物浸入清漆中以形成具有更好的热稳定性,抗燃性和低吸湿性的预浸料。

    Method for forming conductive lines and stacked vias
    10.
    发明授权
    Method for forming conductive lines and stacked vias 失效
    形成导线和堆叠通孔的方法

    公开(公告)号:US5747383A

    公开(公告)日:1998-05-05

    申请号:US523329

    申请日:1995-09-05

    IPC分类号: H01L21/768 H01L21/441

    CPC分类号: H01L21/76877

    摘要: A method for fabricating an improved connection between active device regions in silicon, to overlying metallization levels, has been developed. A LPCVD tungsten contact plug process, which results in optimum coplanarity between the top surface of the tungsten plug and the surrounding insulator surface, has been created.

    摘要翻译: 已经开发了用于制造硅中的有源器件区域与覆盖金属化水平之间的改进连接的方法。 已经产生了LPCVD钨接触塞过程,其导致钨插塞的顶表面和周围的绝缘体表面之间的最佳共面性。