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    Methods and systems for schedule-based and alert-based cleaning of PV systems
    1.
    发明授权
    Methods and systems for schedule-based and alert-based cleaning of PV systems 有权

    公开(公告)号：US10607162B2

    公开(公告)日：2020-03-31

    申请号：US14878325

    申请日：2015-10-08

    Applicant: SunEdison, Inc.

    Inventor： Joseph Philip ,  Andras Boross ,  Stephen James Voss ,  Christopher Andrew Clarke ,  Anastasios Golnas ,  Nagendra Cherukupalli

    IPC: G06Q10/06 ,  H02S50/00

    Abstract: A method for scheduling cleaning of a photovoltaic (“PV”) system is implemented by a soiling monitoring computer system. The method includes determining a soiling level and a soiling rate for a photovoltaic (PV) system, calculating a cost associated with cleaning the PV system at each of a plurality of possible cleaning times, determining an expected energy output gain associated with cleaning the PV system at each of the plurality of possible times based on the soiling level and the soiling rate, calculating an expected benefit associated with cleaning the PV system at each of the plurality of possible cleaning times based on the expected energy output gain associated with each possible cleaning time, determining a first time of the plurality of possible times when the expected benefit exceeds the cost, and scheduling a cleaning time based on at least the determined first time.

    APPARATUS AND SYSTEMS FOR FILTERING FOR POWER LINE COMMUNICATION
    4.
    发明申请
    APPARATUS AND SYSTEMS FOR FILTERING FOR POWER LINE COMMUNICATION 审中-公开
    用于电力线通信过滤的装置和系统

    公开(公告)号：US20150116054A1

    公开(公告)日：2015-04-30

    申请号：US14525966

    申请日：2014-10-28

    Applicant: SunEdison Inc.

    Inventor： Aner Tennen

    IPC: H03H7/01

    CPC classification number: H03H7/0161 ,  H03H7/06 ,  H04B3/54 ,  H04B2203/5491

    Abstract: Apparatus, methods, and systems for filtering for power line communications are described. In one example, a low pass filter for power line communication in a power system including at least one phase conductor and a neutral conductor is described. The filter includes at least one capacitor coupled between the phase conductor and the neutral conductor, at least one resistor coupled between the phase conductor and the neutral conductor, and at least one inductor coupled on the neutral conductor.

    Abstract translation: 描述了用于电力线通信的滤波的装置，方法和系统。 在一个示例中，描述了用于包括至少一个相导体和中性导体的电力系统中的电力线通信的低通滤波器。 滤波器包括耦合在相导体和中性导体之间的至少一个电容器，耦合在相导体和中性导体之间的至少一个电阻器，以及耦合在中性导体上的至少一个电感器。

    PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INACTIVE OXYGEN PRECIPITATE NUCLEI
    5.
    发明申请
    PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INACTIVE OXYGEN PRECIPITATE NUCLEI 有权
    通过激活非活性氧沉淀核生成高亲水密度

    公开(公告)号：US20140141537A1

    公开(公告)日：2014-05-22

    申请号：US14084212

    申请日：2013-11-19

    Applicant: SunEdison, Inc.

    Inventor： Robert J. Falster ,  Vladimir V. Voronkov ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    IPC: H01L21/324 ,  H01L21/66

    CPC classification number: H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L22/12

    Abstract: Processes for the treatment of silicon wafers to form a high density non-uniform distribution of oxygen precipitate nuclei therein such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafers form oxygen precipitates in the bulk and a precipitate-free zone near the surface are disclosed. The processes involve activation of inactive oxygen precipitate nuclei by performing heat treatments between about 400° C. and about 600° C. for at least about 1 hour.

    Abstract translation: 用于处理硅晶片以形成高密度不均匀分布的氧的方法在其中析出核，使得在经受基本上任意的任何电子器件制造工艺的热处理循环后，晶片在本体中形成氧沉淀物， 公开了表面附近的无沉淀区。 所述方法包括通过在约400℃至约600℃之间进行热处理至少约1小时来活化无活性氧沉淀核。

    UV TREATMENT OF POLISHED WAFERS
    6.
    发明申请
    UV TREATMENT OF POLISHED WAFERS 审中-公开
    抛光抛光的紫外线处理

    公开(公告)号：US20140096793A1

    公开(公告)日：2014-04-10

    申请号：US14045325

    申请日：2013-10-03

    Applicant: SunEdison, Inc.

    Inventor： Sasha J. Kweskin ,  Larry W. Shive

    IPC: H01L21/02

    CPC classification number: H01L21/02054 ,  H01L21/02024 ,  H01L21/02052

    Abstract: A method is provided for cleaning a surface of a semiconductor wafer comprising: (a) contacting the front surface of the wafer with a slurry comprising an abrasive agent and a polymeric rheological modifier; (b) contacting the front surface of the semiconductor wafer with an oxidant; and (c) irradiating the front surface of the semiconductor wafer with ultraviolet light.

    Abstract translation: 提供了一种用于清洁半导体晶片的表面的方法，包括：（a）使晶片的前表面与包含研磨剂和聚合物流变改性剂的浆料接触; （b）使半导体晶片的前表面与氧化剂接触; 和（c）用紫外线照射半导体晶片的前表面。

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