公开(公告)号：US20220122841A1

公开(公告)日：2022-04-21

申请号：US17451280

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Timothee Blanquart ,  Takahiro Onuma ,  Shinya Yoshimoto ,  Charles Dezelah ,  Jihee Jeon

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

Abstract: Methods and systems for manufacturing a structure comprising a substrate are provided herein. In some embodiments, the substrate comprises a plurality of recesses. The recesses may be at least partially filled with a gap filling fluid. The gap filling fluid may comprise an Si—N bond.

公开(公告)号：US20240060174A1

公开(公告)日：2024-02-22

申请号：US18234549

申请日：2023-08-16

Applicant: ASM IP Holding B.V.

Inventor： Makoto Igarashi ,  Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Ling Chi Hwang

IPC: C23C16/04

CPC classification number: C23C16/045

Abstract: Methods and systems of forming material within a recess are disclosed. Exemplary methods include forming a flowable material at a first temperature (T1) within a reaction chamber, the flowable material forming deposited material within the recess, treating the deposited material to form treated material, and heating the substrate including the treated material at a second temperature (T2) to remove a portion of the deposited material.

公开(公告)号：US20230399745A1

公开(公告)日：2023-12-14

申请号：US18205766

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Makoto Igarashi ,  Ranjit Borude

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32091 ,  C23C16/511 ,  C23C16/505

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

公开(公告)号：US20250054753A1

公开(公告)日：2025-02-13

申请号：US18795432

申请日：2024-08-06

Applicant: ASM IP Holding B.V.

Inventor： KiHun Kim ,  SangHeon Yong ,  Sungha Choi ,  JuHyuk Park ,  Jihye Yang ,  Jaewoo Jeong ,  Shinya Yoshimoto ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.

公开(公告)号：US20230005734A1

公开(公告)日：2023-01-05

申请号：US17944583

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

公开(公告)号：US20250011927A1

公开(公告)日：2025-01-09

申请号：US18889542

申请日：2024-09-19

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US12129546B2

公开(公告)日：2024-10-29

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US20230298885A1

公开(公告)日：2023-09-21

申请号：US18185625

申请日：2023-03-17

Applicant: ASM IP Holding, B.V.

Inventor： Ranjit Borude ,  Shinya Yoshimoto ,  Makoto Igarashi ,  Jhoelle Roche Guhit ,  Pamarti Viswanath

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02348 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02222 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32357 ,  H01J2237/332 ,  H01J37/32733

Abstract: Methods and related systems for at least partially filling recesses comprised in a substrate with a gap filling fluid. The gap filling fluid comprises a Si—N bond. The methods comprise exposing the substrate to a nitrogen and hydrogen-containing gas on the one hand and to vacuum ultraviolet light on the other hand.

公开(公告)号：US11476109B2

公开(公告)日：2022-10-18

申请号：US16896238

申请日：2020-06-09

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.

公开(公告)号：US20240162037A1

公开(公告)日：2024-05-16

申请号：US18410333

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/28518

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.