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公开(公告)号:US12107056B2
公开(公告)日:2024-10-01
申请号:US16745331
申请日:2020-01-16
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ya Fang Chan , Yuan-Feng Chiang , Po-Wei Lu
IPC: H01L23/66 , H01L21/56 , H01L21/768 , H01L23/31 , H01L23/495
CPC classification number: H01L23/66 , H01L21/56 , H01L21/76804 , H01L23/3121 , H01L23/49506 , H01L2223/6644 , H01L2223/6677
Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a dielectric layer. The semiconductor device package further includes an antenna structure disposed in the dielectric layer. The semiconductor device package further includes a semiconductor device disposed on the dielectric layer. The semiconductor device package further includes an encapsulant covering the semiconductor device. The semiconductor device package further includes a conductive pillar having a first portion and a second portion. The first portion surrounded by the encapsulant and the second portion embedded in the dielectric layer.
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公开(公告)号:US11837557B2
公开(公告)日:2023-12-05
申请号:US17537317
申请日:2021-11-29
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Peng Yang , Yuan-Feng Chiang , Po-Wei Lu
CPC classification number: H01L23/562 , H01L21/4853 , H01L21/4857 , H01L21/561 , H01L21/565 , H01L23/16 , H01L23/3114 , H01L23/3135 , H01L23/5383 , H01L23/5386 , H01L23/5389 , H01L24/96 , H01L21/568 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/73267 , H01L2224/92244 , H01L2224/95001 , H01L2924/1431 , H01L2924/1433 , H01L2924/15156 , H01L2924/1815 , H01L2924/18162 , H01L2924/351 , H01L2924/3511 , H01L2924/3511 , H01L2924/00 , H01L2924/1431 , H01L2924/00012 , H01L2924/1433 , H01L2924/00012
Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.
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3.
公开(公告)号:US11521958B2
公开(公告)日:2022-12-06
申请号:US16675011
申请日:2019-11-05
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ya Fang Chan , Yuan-Feng Chiang
IPC: H01L25/065 , H01L25/00 , H01L21/768 , H01L23/00 , H01L23/31 , H01L27/108 , H01L29/66 , H01L21/285 , H01L21/311 , H01L21/3213 , H01L23/528 , H01L29/51 , H01L21/3115 , H01L21/265 , H01L21/28 , H01L21/02 , H01L21/3065 , H01L23/498 , H01L21/762 , H01L21/56 , H01L21/48
Abstract: A semiconductor device package includes a redistribution layer, a plurality of conductive pillars, a reinforcing layer and an encapsulant. The conductive pillars are in direct contact with the first redistribution layer. The reinforcing layer surrounds a lateral surface of the conductive pillars. The encapsulant encapsulates the first redistribution layer and the reinforcing layer. The conductive pillars are separated from each other by the reinforcing layer.
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公开(公告)号:US09947635B1
公开(公告)日:2018-04-17
申请号:US15294594
申请日:2016-10-14
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Wen-Long Lu , Yuan-Feng Chiang , Chi-Chang Lee , Chung-Hsi Wu
IPC: H01L23/02 , H01L23/00 , H01L23/498
CPC classification number: H01L24/17 , H01L23/49811 , H01L23/49827 , H01L24/33 , H01L2224/1705 , H01L2224/175 , H01L2224/33104 , H01L2224/335
Abstract: A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first main body, at least one first columnar portion and at least one first conductive layer. The first columnar portion protrudes from a bottom surface of the first main body. The first conductive layer is disposed on a side surface of the first columnar portion. The second semiconductor device includes a second main body, at least one second columnar portion and at least one second conductive layer. The second columnar portion protrudes from a top surface of the second main body. The second conductive layer is disposed on a side surface of the second columnar portion. The first conductive layer is electrically coupled to the second conductive layer.
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公开(公告)号:US11189576B2
公开(公告)日:2021-11-30
申请号:US15683698
申请日:2017-08-22
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Peng Yang , Yuan-Feng Chiang , Po-Wei Lu
Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.
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公开(公告)号:US10344383B2
公开(公告)日:2019-07-09
申请号:US15668632
申请日:2017-08-03
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Chuan-Yung Shih , Tai-Yuan Huang , Yu-Chi Wang , Chin-Feng Wang , Sing-Syuan Shiau , Chun-Wei Shih , Shao-Ci Huang , Huang-Hsien Chang , Yuan-Feng Chiang
IPC: H01L21/02 , C23C16/458 , H01L21/285 , H01L21/677 , H01L21/687
Abstract: In one or more embodiments, an apparatus for processing a wafer includes a ceramic wall, a metal wall and a frame. The ceramic wall defines a chamber for accommodating the wafer. The ceramic wall has a first surface defining a first opening. The metal wall surrounds the ceramic wall. The metal wall has a second surface defining a second opening adjacent to the first opening. The frame covers the second surface.
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公开(公告)号:US11428946B2
公开(公告)日:2022-08-30
申请号:US16872052
申请日:2020-05-11
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Yuan-Feng Chiang , Tsung-Tang Tsai , Min Lung Huang
Abstract: According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.
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公开(公告)号:US10663746B2
公开(公告)日:2020-05-26
申请号:US15347675
申请日:2016-11-09
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Yuan-Feng Chiang , Tsung-Tang Tsai , Min Lung Huang
Abstract: According to various embodiments, a collimator includes a substrate defining a plurality of channels through the substrate. The substrate includes a first surface and a second surface opposite the first surface. Each of the channels includes a first aperture exposed from the first surface, a second aperture between the first surface and the second surface, and a third aperture exposed from the second surface. The first aperture and the third aperture are larger than the second aperture.
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公开(公告)号:US10211161B2
公开(公告)日:2019-02-19
申请号:US15692947
申请日:2017-08-31
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Yuan-Feng Chiang , Cong-Wei Chen , I-Ting Chi , Shao-An Chen
IPC: H01L23/29 , H01L23/31 , H01L25/04 , H01L25/07 , H01L23/538 , H01L21/56 , H01L21/48 , H01L21/78 , H01L23/00 , H01L23/498 , H01L25/065
Abstract: A semiconductor package structure includes a semiconductor substrate, at least one semiconductor die, an encapsulant, a protection layer, a plurality of conductive elements and a redistribution layer. The semiconductor die is disposed on the semiconductor substrate. The encapsulant covers at least a portion of the semiconductor die, and has a first surface and a lateral surface. The protection layer covers the first surface and the lateral surface of the encapsulant. The conductive elements surround the lateral surface of the encapsulant. The redistribution layer electrically connects the semiconductor die and the conductive elements.
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10.
公开(公告)号:US12272687B2
公开(公告)日:2025-04-08
申请号:US18076382
申请日:2022-12-06
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ya Fang Chan , Yuan-Feng Chiang
IPC: H01L25/00 , H01L21/48 , H01L21/56 , H01L21/762 , H01L23/00 , H01L23/31 , H01L23/498
Abstract: A semiconductor device package includes a redistribution layer, a plurality of conductive pillars, a reinforcing layer and an encapsulant. The conductive pillars are in direct contact with the first redistribution layer. The reinforcing layer surrounds a lateral surface of the conductive pillars. The encapsulant encapsulates the first redistribution layer and the reinforcing layer. The conductive pillars are separated from each other by the reinforcing layer.
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