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    Semiconductor strain sensor having improved resistance to bonding strain effects
    1.
    发明授权
    Semiconductor strain sensor having improved resistance to bonding strain effects 失效
    半导体应变传感器具有改善的耐结合应变效应

    公开(公告)号：US5408112A

    公开(公告)日：1995-04-18

    申请号：US91068

    申请日：1993-07-14

    申请人： Akira Tai ,  Toshitaka Yamada ,  Yoshinori Fujihashi ,  Tsuyoshi Fukada ,  Hirohito Shioya ,  Yoshimi Yoshino ,  Hiroshige Sugito

    发明人： Akira Tai ,  Toshitaka Yamada ,  Yoshinori Fujihashi ,  Tsuyoshi Fukada ,  Hirohito Shioya ,  Yoshimi Yoshino ,  Hiroshige Sugito

    IPC分类号： G01B7/16 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84

    CPC分类号： G01B7/20 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2924/10253

    摘要： A semiconductor strain sensor includes a base, a peripheral section, a central section and a flexible beam. The peripheral section is bent to the base. Bonding strain is generated at a bonding portion between the base and the peripheral section. The central section extends from the peripheral section. The flexible beam extends from the central section and includes a strain detecting element. The strain detecting element changes its electric characteristic when strain is applied thereto. A thickness of the flexible beam is thinner than that of the central section. The bonding strain is transmitted from the bonding portion to the strain detecting element through a transmission path. The transmission path is bent. The bonding strain is attenuated because it is dispersed at a bending portion of the transmission path. The sensor accurately detects the strain to be detected without a bad influence of the bonding strain.

    摘要翻译： 半导体应变传感器包括基座，外围部分，中心部分和柔性梁。 外围部分弯曲到基部。 在基部和周边部之间的接合部分产生接合应变。 中央部分从外围部分延伸。 柔性梁从中心部分延伸并且包括应变检测元件。 当应变应变时，应变检测元件改变其电特性。 柔性梁的厚度比中央部分的厚度薄。 接合应变通过传输路径从结合部分传递到应变检测元件。 传输路径弯曲。 粘合应变由于分散在传输路径的弯曲部分而衰减。 传感器精确地检测待检测的应变，而不受粘合应变的不良影响。

    Production method of a semiconductor dynamic sensor
    2.
    发明授权
    Production method of a semiconductor dynamic sensor 失效
    半导体动态传感器的制作方法

    公开(公告)号：US5643803A

    公开(公告)日：1997-07-01

    申请号：US122164

    申请日：1993-09-17

    申请人： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Hiroshige Sugito ,  Minekazu Sakai

    发明人： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Hiroshige Sugito ,  Minekazu Sakai

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/3063 ,  C25F3/12

    CPC分类号： G01P15/0802 ,  G01P15/123 ,  G01P15/124 ,  H01L21/3063 ,  Y10S438/924

    摘要： It is intended to provide an etching method for semiconductor devices in which the etching depth or the thickness of a thin thickness portion can be precisely controlled. According to experiment results, when a P-type substrate in which an N-type epitaxial layer is formed is immersed in an etching solution such as KOH or the like, and a voltage for reverse bias of PN junction is applied between an electrode plate opposing the substrate and the epitaxial layer to perform electrochemical etching, it has been found that the distance from the PN junction plane to the etching stop position is approximately equal to a depletion layer width at the substrate side of the PN junction portion. Namely, the etching stops at the forward end of the depletion layer. Therefore, the junction depletion layer width at the substrate side is controlled to be a size obtained by subtracting a necessary depth for etching from a thickness of the semiconductor substrate except for the semiconductor layer, so that the etching depth or the thickness of the thin thickness portion remaining after etching can be precisely controlled.

    摘要翻译： 旨在为半导体器件提供蚀刻方法，其中可以精确地控制蚀刻深度或厚度厚度部分的厚度。 根据实验结果，当将形成有N型外延层的P型衬底浸入诸如KOH等的蚀刻溶液中时，将PN结的反向偏压施加在相对的电极板之间 衬底和外延层进行电化学蚀刻，已经发现从PN结面到蚀刻停止位置的距离近似等于PN结部分的衬底侧的耗尽层宽度。 也就是说，蚀刻在耗尽层的前端停止。 因此，将衬底侧的结耗尽层宽度控制为通过从除了半导体层之外的半导体衬底的厚度减去所需的蚀刻深度获得的尺寸，使得蚀刻深度或厚度厚度 可以精确地控制蚀刻后残留的部分。

    Process for producing semiconductor strain-sensitive sensor
    3.
    发明授权
    Process for producing semiconductor strain-sensitive sensor 失效
    生产半导体应变敏感传感器的工艺

    公开(公告)号：US5654244A

    公开(公告)日：1997-08-05

    申请号：US427960

    申请日：1995-04-26

    申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Hiroshige Sugito

    发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Hiroshige Sugito

    IPC分类号： G01L1/22 ,  G01L9/00 ,  H01L29/84 ,  H01L21/46

    CPC分类号： G01L9/0042

    摘要： In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.

    摘要翻译： 在本发明中，在蚀刻第二保护层时防止在隔膜上形成的第一保护层不必要地被蚀刻，并且提高了隔膜的检测精度。 在制造半导体压力传感器的工艺中，通过在隔膜1a上沉积来连续地形成第一保护层4，金属层8和第二保护层6，并且通过蚀刻去除第二保护层6，使得第二保护层6 保护层6留在电极5的预定部分上。由于金属层8在通过蚀刻去除第二保护层6时用作蚀刻停止层，所以防止隔膜1a上的第一保护层4 被蚀刻 之后通过蚀刻除去金属层8，使得在隔膜1a上仅形成第一保护层4。

    Semiconductor sensor device and method of manufacturing the same
    4.
    发明授权
    Semiconductor sensor device and method of manufacturing the same 有权
    半导体传感器装置及其制造方法

    公开(公告)号：US06444543B2

    公开(公告)日：2002-09-03

    申请号：US09866709

    申请日：2001-05-30

    申请人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

    发明人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

    IPC分类号： H01L21301

    CPC分类号： B81C1/00896 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.

    摘要翻译： 通过从基板的第二表面切割基板，形成在基板的第一表面上的加速度传感器芯片的多个半导体芯片被分离成单独的部件。 在传感器芯片形成在第一表面上的同时形成围绕传感器芯片的每个传感器芯片周围的凹槽，该传感器芯片被切出。 在切割之前，覆盖第一表面的保护片沿着凹槽的侧壁和底壁粘贴。 所述凹槽被制成足够宽以确保保护片沿着凹槽的壁弯曲，而不会在凹槽和保护片之间留下空间。 因此，防止在切割工艺中产生的切割粉尘被散射并进入传感器芯片。

    Semiconductor strain sensor
    7.
    发明授权
    Semiconductor strain sensor 失效
    半导体应变传感器

    公开(公告)号：US5869876A

    公开(公告)日：1999-02-09

    申请号：US788169

    申请日：1997-01-24

    申请人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

    发明人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82 ,  H01L27/20

    CPC分类号： G01P15/0802 ,  G01P15/124 ,  H01L29/84 ,  G01P2015/0814

    摘要： A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.

    摘要翻译： 半导体应变传感器在由p型隔离区域包围的p型衬底上具有到达p型衬底的量规形成区域。 蚀刻p型基板，使得量规形成区域的整个底面被p型基板覆盖，并且p型基板或p型隔离区域不暴露于蚀刻的凹部或隔离槽 ，每个都具有相对较多数量的缺陷。 因此，可以减小PN结处的漏电流，以减小量规形成区域的电位变化。