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    Semiconductor sensor device and method of manufacturing the same
    4.
    发明授权
    Semiconductor sensor device and method of manufacturing the same 有权
    半导体传感器装置及其制造方法

    公开(公告)号：US06444543B2

    公开(公告)日：2002-09-03

    申请号：US09866709

    申请日：2001-05-30

    申请人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

    发明人： Minekazu Sakai ,  Hiroshige Sugito ,  Hiroshi Muto ,  Motoki Ito ,  Tsuyoshi Fukada

    IPC分类号： H01L21301

    CPC分类号： B81C1/00896 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.

    摘要翻译： 通过从基板的第二表面切割基板，形成在基板的第一表面上的加速度传感器芯片的多个半导体芯片被分离成单独的部件。 在传感器芯片形成在第一表面上的同时形成围绕传感器芯片的每个传感器芯片周围的凹槽，该传感器芯片被切出。 在切割之前，覆盖第一表面的保护片沿着凹槽的侧壁和底壁粘贴。 所述凹槽被制成足够宽以确保保护片沿着凹槽的壁弯曲，而不会在凹槽和保护片之间留下空间。 因此，防止在切割工艺中产生的切割粉尘被散射并进入传感器芯片。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    5.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Method for manufacturing movable portion of semiconductor device
    6.
    发明申请
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号：US20050054153A1

    公开(公告)日：2005-03-10

    申请号：US10936539

    申请日：2004-09-09

    申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    IPC分类号： B81C1/00 ,  H01L21/306 ,  H01L29/80 ,  H05K3/06

    CPC分类号： B81C1/00619 ,  B81C2201/0112

    摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Method for manufacturing movable portion of semiconductor device
    8.
    发明授权
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号：US07214625B2

    公开(公告)日：2007-05-08

    申请号：US10936539

    申请日：2004-09-09

    申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L29/82

    CPC分类号： B81C1/00619 ,  B81C2201/0112

    摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Process for producing semiconductor strain-sensitive sensor
    9.
    发明授权
    Process for producing semiconductor strain-sensitive sensor 失效
    生产半导体应变敏感传感器的工艺

    公开(公告)号：US5654244A

    公开(公告)日：1997-08-05

    申请号：US427960

    申请日：1995-04-26

    申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Hiroshige Sugito

    发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Hiroshige Sugito

    IPC分类号： G01L1/22 ,  G01L9/00 ,  H01L29/84 ,  H01L21/46

    CPC分类号： G01L9/0042

    摘要： In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.

    摘要翻译： 在本发明中，在蚀刻第二保护层时防止在隔膜上形成的第一保护层不必要地被蚀刻，并且提高了隔膜的检测精度。 在制造半导体压力传感器的工艺中，通过在隔膜1a上沉积来连续地形成第一保护层4，金属层8和第二保护层6，并且通过蚀刻去除第二保护层6，使得第二保护层6 保护层6留在电极5的预定部分上。由于金属层8在通过蚀刻去除第二保护层6时用作蚀刻停止层，所以防止隔膜1a上的第一保护层4 被蚀刻 之后通过蚀刻除去金属层8，使得在隔膜1a上仅形成第一保护层4。

    Production method of a semiconductor dynamic sensor
    10.
    发明授权
    Production method of a semiconductor dynamic sensor 失效
    半导体动态传感器的制作方法

    公开(公告)号：US5643803A

    公开(公告)日：1997-07-01

    申请号：US122164

    申请日：1993-09-17

    申请人： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Hiroshige Sugito ,  Minekazu Sakai

    发明人： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Hiroshige Sugito ,  Minekazu Sakai

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/3063 ,  C25F3/12

    CPC分类号： G01P15/0802 ,  G01P15/123 ,  G01P15/124 ,  H01L21/3063 ,  Y10S438/924

    摘要： It is intended to provide an etching method for semiconductor devices in which the etching depth or the thickness of a thin thickness portion can be precisely controlled. According to experiment results, when a P-type substrate in which an N-type epitaxial layer is formed is immersed in an etching solution such as KOH or the like, and a voltage for reverse bias of PN junction is applied between an electrode plate opposing the substrate and the epitaxial layer to perform electrochemical etching, it has been found that the distance from the PN junction plane to the etching stop position is approximately equal to a depletion layer width at the substrate side of the PN junction portion. Namely, the etching stops at the forward end of the depletion layer. Therefore, the junction depletion layer width at the substrate side is controlled to be a size obtained by subtracting a necessary depth for etching from a thickness of the semiconductor substrate except for the semiconductor layer, so that the etching depth or the thickness of the thin thickness portion remaining after etching can be precisely controlled.

    摘要翻译： 旨在为半导体器件提供蚀刻方法，其中可以精确地控制蚀刻深度或厚度厚度部分的厚度。 根据实验结果，当将形成有N型外延层的P型衬底浸入诸如KOH等的蚀刻溶液中时，将PN结的反向偏压施加在相对的电极板之间 衬底和外延层进行电化学蚀刻，已经发现从PN结面到蚀刻停止位置的距离近似等于PN结部分的衬底侧的耗尽层宽度。 也就是说，蚀刻在耗尽层的前端停止。 因此，将衬底侧的结耗尽层宽度控制为通过从除了半导体层之外的半导体衬底的厚度减去所需的蚀刻深度获得的尺寸，使得蚀刻深度或厚度厚度 可以精确地控制蚀刻后残留的部分。