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    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    3.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Semiconductor sensor method
    5.
    发明授权
    Semiconductor sensor method 失效
    半导体传感器方法

    公开(公告)号：US5587343A

    公开(公告)日：1996-12-24

    申请号：US401044

    申请日：1995-03-08

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

    IPC分类号： G01L1/18 ,  G01L1/22 ,  G01P15/08 ,  G01P15/12 ,  H01L21/28 ,  H01L29/51 ,  H01L29/84 ,  H01L21/00 ,  B44C1/22

    CPC分类号： H01L21/28238 ,  G01P15/0802 ,  G01P15/124 ,  H01L29/51 ,  H01L29/84 ,  G01P2015/0828

    摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.

    摘要翻译： 一种制造半导体传感器的方法，其中公开了可移动部件的偏转。 在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。 此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。 通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。 通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。 进行通过光刻法的干蚀刻等的图案化，形成可动部件。 然后蚀刻可动件下方的氧化硅膜。

    Semiconductor acceleration sensor with source and drain regions
    6.
    发明授权
    Semiconductor acceleration sensor with source and drain regions 失效
    具有源极和漏极区域的半导体加速度传感器

    公开(公告)号：US5627397A

    公开(公告)日：1997-05-06

    申请号：US402949

    申请日：1995-03-13

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    IPC分类号： G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/124 ,  G01P1/006 ,  Y10S73/01

    摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.

    摘要翻译： 根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。 在该检测中使用两个晶体管结构。 一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。 此时，另一晶体管结构中的固定电极之间的电流降低。 这两个晶体管结构靠近地设置。 通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

    Method for fabrication of a semiconductor sensor
    8.
    发明授权
    Method for fabrication of a semiconductor sensor 失效
    半导体传感器的制造方法

    公开(公告)号：US6143584A

    公开(公告)日：2000-11-07

    申请号：US121893

    申请日：1998-07-24

    申请人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

    发明人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

    IPC分类号： G01P15/12 ,  H01L21/00

    CPC分类号： G01P15/123 ,  G01P15/124

    摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.

    摘要翻译： 半导体传感器具有量规电阻。 量规电阻器通过接触孔与铝电极连接，形成桥接电路。 在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。 然后，测量电阻的电阻或桥接电路的输出。 基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

    Semiconductor strain sensor
    9.
    发明授权
    Semiconductor strain sensor 失效
    半导体应变传感器

    公开(公告)号：US5869876A

    公开(公告)日：1999-02-09

    申请号：US788169

    申请日：1997-01-24

    申请人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

    发明人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82 ,  H01L27/20

    CPC分类号： G01P15/0802 ,  G01P15/124 ,  H01L29/84 ,  G01P2015/0814

    摘要： A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.

    摘要翻译： 半导体应变传感器在由p型隔离区域包围的p型衬底上具有到达p型衬底的量规形成区域。 蚀刻p型基板，使得量规形成区域的整个底面被p型基板覆盖，并且p型基板或p型隔离区域不暴露于蚀刻的凹部或隔离槽 ，每个都具有相对较多数量的缺陷。 因此，可以减小PN结处的漏电流，以减小量规形成区域的电位变化。

    Angular velocity sensor
    10.
    发明授权
    Angular velocity sensor 有权
    角速度传感器

    公开(公告)号：US08549916B2

    公开(公告)日：2013-10-08

    申请号：US13093328

    申请日：2011-04-25

    申请人： Minekazu Sakai ,  Kenichi Ao

    发明人： Minekazu Sakai ,  Kenichi Ao

    IPC分类号： G01C19/56

    CPC分类号： G01C19/5747

    摘要： In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.

    摘要翻译： 在角速度传感器中，梁部分将一对振动器彼此连接并将每个振动器耦合到基板，以使得一对振动器能够在彼此垂直的第一方向和第二方向上移动。 驱动部分在第一方向上以相反的相位振动一对振动器。 检测部分检测一对振动器在第二方向上的位移，作为电容的变化。 检测部分包括第一和第二检测电极。 限制部分基于电容的变化来限制一对振动器在第二方向上的位移。 限制部分包括第一和第二限制电极，并且限制电极之间的电极间隔是第二方向上检测电极宽度的两倍。