Method of manufacturing semiconductor device capable of sensing dynamic quantity
    4.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号:US06753201B2

    公开(公告)日:2004-06-22

    申请号:US10154784

    申请日:2002-05-28

    IPC分类号: H01L2100

    摘要: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译: 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层,氧化物层和第二硅层的SOI(绝缘体上硅)基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后,进行干蚀刻,从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件,形成可动部分。 例如,中和电荷的离子被施加到沟槽中,使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Semiconductor sensor device and method of manufacturing the same
    5.
    发明授权
    Semiconductor sensor device and method of manufacturing the same 有权
    半导体传感器装置及其制造方法

    公开(公告)号:US06444543B2

    公开(公告)日:2002-09-03

    申请号:US09866709

    申请日:2001-05-30

    IPC分类号: H01L21301

    摘要: Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.

    摘要翻译: 通过从基板的第二表面切割基板,形成在基板的第一表面上的加速度传感器芯片的多个半导体芯片被分离成单独的部件。 在传感器芯片形成在第一表面上的同时形成围绕传感器芯片的每个传感器芯片周围的凹槽,该传感器芯片被切出。 在切割之前,覆盖第一表面的保护片沿着凹槽的侧壁和底壁粘贴。 所述凹槽被制成足够宽以确保保护片沿着凹槽的壁弯曲,而不会在凹槽和保护片之间留下空间。 因此,防止在切割工艺中产生的切割粉尘被散射并进入传感器芯片。

    Method for manufacturing movable portion of semiconductor device
    8.
    发明申请
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号:US20050054153A1

    公开(公告)日:2005-03-10

    申请号:US10936539

    申请日:2004-09-09

    CPC分类号: B81C1/00619 B81C2201/0112

    摘要: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译: 一种制造具有可移动部分的半导体器件的方法包括以下步骤:在半导体层上形成沟槽,使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分,使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中,防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Method for manufacturing movable portion of semiconductor device
    9.
    发明授权
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号:US07214625B2

    公开(公告)日:2007-05-08

    申请号:US10936539

    申请日:2004-09-09

    CPC分类号: B81C1/00619 B81C2201/0112

    摘要: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译: 一种制造具有可移动部分的半导体器件的方法包括以下步骤:在半导体层上形成沟槽,使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分,使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中,防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Method for manufacturing semiconductor device
    10.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US06953753B2

    公开(公告)日:2005-10-11

    申请号:US10373964

    申请日:2003-02-27

    摘要: A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer such that the insulating layer is located between the semiconductor layer and the semiconductor substrate. The method further includes a step of dry etching the semiconductor layer to form a trench with a charge prevented from building up on a surface of the insulating layer that is exposed at a bottom of the trench during the dry etching. The method further includes a step of dry etching a sidewall defining the trench at a portion adjacent to the bottom of the trench to form the movable unit. The later dry etching is performed with a charge building up on the surface of the insulating layer such that etching ions strike to etch the portion of the sidewall.

    摘要翻译: 一种具有可移动单元的半导体器件的制造方法包括:形成包括半导体衬底,绝缘层和半导体层的SOI衬底的步骤,使得绝缘层位于半导体层和半导体衬底之间。 该方法还包括干法蚀刻半导体层以形成沟槽的步骤,其中在干蚀刻期间,在沟槽底部露出的绝缘层的表面上阻止电荷积聚。 该方法还包括在邻近沟槽底部的部分干蚀刻限定沟槽的侧壁以形成可移动单元的步骤。 稍后的干法蚀刻是通过在绝缘层的表面上积聚的电荷进行的,使得蚀刻离子发生蚀刻以蚀刻侧壁的一部分。