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    Capacitive physical quantity detection device
    3.
    发明授权
    Capacitive physical quantity detection device 有权
    电容式物理量检测装置

    公开(公告)号：US06450029B1

    公开(公告)日：2002-09-17

    申请号：US09667800

    申请日：2000-09-22

    申请人： Minekazu Sakai ,  Shinji Yoshihara

    发明人： Minekazu Sakai ,  Shinji Yoshihara

    IPC分类号： G01P1500

    CPC分类号： G01P15/125 ,  G01P2015/0814

    摘要： A capacitive semiconductor acceleration sensor capable of efficiently performing a self-diagnostic procedure without having to provide any separate electrodes for self-diagnosis purposes. The acceleration sensor includes a beam portion that is deformable upon application of acceleration thereto in a direction at right angles to the elongate direction thereof to thereby exhibit a spring function. The sensor also includes a movable electrode and fixed electrodes which are integrally formed with the beam portion. The sensor is operable to detect the acceleration while applying between the movable electrode and fixed electrodes a periodically changeable signal to derive an output voltage variable in potential with a differential capacitance change of capacitors between the both electrodes. Here, a detection signal for detection of such acceleration and a self-diagnosis signal are selectively applied while permitting creation of quasi-acceleration at the movable electrode due to application of the self-diagnosis signal, wherein a ratio of a frequency of the self-diagnosis signal to a resonance frequency of the beam portion in its deformation direction is set so that the resultant resonance magnification of such beam portion is more than or equal to one time upon application of the self-diagnosis signal.

    摘要翻译： 一种电容式半导体加速度传感器，其能够有效地执行自诊断程序，而不必为自诊断目的提供任何单独的电极。 加速度传感器包括梁部分，该梁部分在与其细长方向成直角的方向上施加加速度时可变形，从而表现出弹簧功能。 传感器还包括可动电极和与光束部分整体形成的固定电极。 传感器可操作以在施加可动电极和固定电极之间检测加速度，周期性地变化的信号，以在两个电极之间的电容器的差分电容变化导出电位变化的输出电压。 这里，选择性地施加用于检测这种加速度的检测信号和自诊断信号，同时由于应用自诊断信号而允许在可动电极处产生准加速度，其中， 设定到波束部分的变形方向的共振频率的诊断信号，使得在应用自诊断信号时，这种波束部分的合成谐振倍率大于或等于一次。

    Method of fabricating a semiconductor pressure sensor
    5.
    发明授权
    Method of fabricating a semiconductor pressure sensor 失效
    制造半导体压力传感器的方法

    公开(公告)号：US4975390A

    公开(公告)日：1990-12-04

    申请号：US132573

    申请日：1987-12-08

    申请人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Akira Kuroyanagi ,  Tomohiro Funahashi ,  Minekazu Sakai ,  Shinji Yoshihara

    发明人： Tetsuo Fujii ,  Susumu Kuroyanagi ,  Akira Kuroyanagi ,  Tomohiro Funahashi ,  Minekazu Sakai ,  Shinji Yoshihara

    IPC分类号： G01L9/00

    CPC分类号： G01L9/0042 ,  G01L9/0055 ,  Y10S148/012 ,  Y10S148/135

    摘要： Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.

    摘要翻译： 这里公开的是半导体压力传感器和制造方法。 传感器包括在其主表面上具有凹部的板。 隔膜具有与板的第一主表面接合的下表面，并且形成为具有在其中没有孔的上表面。 压阻层形成为与隔膜接触并定位成至少部分地位于凹部上方。 压阻层的电阻提供了施加到隔膜的压力的指示。 制造方法包括在隔膜中形成单晶基板的压阻层，而不会再结晶。

    Semiconductor device capable of restricting coil extension direction and manufacturing method thereof
    6.
    发明授权
    Semiconductor device capable of restricting coil extension direction and manufacturing method thereof 有权
    能够限制线圈延伸方向的半导体装置及其制造方法

    公开(公告)号：US08610246B2

    公开(公告)日：2013-12-17

    申请号：US13084074

    申请日：2011-04-11

    申请人： Shinji Yoshihara ,  Kazushi Asami ,  Yasuhiro Kitamura ,  Junji Oohara

    发明人： Shinji Yoshihara ,  Kazushi Asami ,  Yasuhiro Kitamura ,  Junji Oohara

    IPC分类号： H01L29/00

    CPC分类号： H01L21/6835 ,  H01F5/003 ,  H01F41/041 ,  H01F41/046 ,  H01L2924/0002 ,  H05K1/165 ,  H05K2201/09672 ,  H01L2924/00

    摘要： In a manufacturing method for a semiconductor device having a coil layer part on a substrate, two support substrates each having a flat surface are prepared, and a component member is formed on the flat surface of each of the support substrates. The component member includes a wiring portion having a predetermined pattern and an insulation film surrounding the wiring portion. The wiring portion is provided with a connecting portion exposing from the insulation film. A coil layer part is formed by opposing and bonding the component members formed on the support substrates to each other while applying pressure in a condition where the flat surfaces of the support substrates are parallel to each other. A coil is formed in the coil layer part by connecting the wiring portions through the connecting portions.

    摘要翻译： 在具有在基板上具有线圈层部分的半导体器件的制造方法中，准备了具有平坦表面的两个支撑基板，并且在每个支撑基板的平坦表面上形成有部件。 该部件包括具有预定图案的布线部分和围绕布线部分的绝缘膜。 布线部分设置有从绝缘膜露出的连接部分。 线圈层部分通过在支撑基板的平坦表面彼此平行的状态下相对地并且将形成在支撑基板上的部件彼此相对并粘合而形成，同时施加压力。 通过连接部分连接布线部分，在线圈层部分中形成线圈。

    Optical device having optical waveguide and method for manufacturing the same
    8.
    发明授权
    Optical device having optical waveguide and method for manufacturing the same 有权
    具有光波导的光学元件及其制造方法

    公开(公告)号：US07174072B2

    公开(公告)日：2007-02-06

    申请号：US11139540

    申请日：2005-05-31

    申请人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

    发明人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

    IPC分类号： G02B6/26 ,  H01L21/00

    CPC分类号： G02B6/136 ,  G02B6/122 ,  G02B6/4207

    摘要： An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.

    摘要翻译： 光学器件包括：硅衬底; 多个具有矩形平面形状的氧化硅柱; 以及设置在列之间的空腔。 每列具有设置在基板上的下部。 每列具有定义为W 1的宽度。空腔的宽度定义为W 2.W 1 / W 2的比率随着进入塔的下部而变小。 由柱和空腔提供的芯层可以容易地具有等于或大于几十个的厚度。 因此，光源与设备之间的连接损耗减小。

    Optical device having optical waveguide and method for manufacturing the same
    9.
    发明申请
    Optical device having optical waveguide and method for manufacturing the same 有权
    具有光波导的光学元件及其制造方法

    公开(公告)号：US20050265662A1

    公开(公告)日：2005-12-01

    申请号：US11139540

    申请日：2005-05-31

    申请人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

    发明人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

    IPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B6/26 ,  G02B6/42 ,  G02B27/00 ,  H01L21/311

    CPC分类号： G02B6/136 ,  G02B6/122 ,  G02B6/4207

    摘要： An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.

    摘要翻译： 光学器件包括：硅衬底; 多个具有矩形平面形状的氧化硅柱; 以及设置在列之间的空腔。 每列具有设置在基板上的下部。 每列具有定义为W 1的宽度。空腔的宽度定义为W 2.W 1 / W 2的比率随着进入塔的下部而变小。 由柱和空腔提供的芯层可以容易地具有等于或大于几十个的厚度。 因此，光源与设备之间的连接损耗减小。

    Semiconductor device having a flat protective adhesive sheet
    10.
    发明授权
    Semiconductor device having a flat protective adhesive sheet 失效
    具有平坦的保护性粘合片的半导体装置

    公开(公告)号：US06787929B2

    公开(公告)日：2004-09-07

    申请号：US09785464

    申请日：2001-02-20

    申请人： Shinji Yoshihara ,  Yasuo Souki ,  Kinya Atsumi ,  Hiroshi Muto

    发明人： Shinji Yoshihara ,  Yasuo Souki ,  Kinya Atsumi ,  Hiroshi Muto

    IPC分类号： H01L2329

    CPC分类号： B81C1/00888 ,  B81C1/00896 ,  C09J7/385 ,  C09J2203/326 ,  C09J2423/006 ,  C09J2433/00 ,  H01L21/6836 ,  H01L2221/68327

    摘要： A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.

    摘要翻译： 半导体器件具有其表面上具有感测部分的半导体晶片和附接到半导体晶片的粘合片作为保护盖以覆盖感测部分。 粘合片由通常在粘合片的整个表面上设置的平坦粘合片和粘合剂构成。 通过UV照射选择性地降低粘合剂的粘附性以具有粘合减少区域，并且粘合降低区域面对感测部分。 可以以高生产率制造保护盖，并且在半导体晶片被切割并被输送时可靠地保护感测部分。