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    Method for fabrication of a semiconductor sensor
    5.
    发明授权
    Method for fabrication of a semiconductor sensor 失效
    半导体传感器的制造方法

    公开(公告)号：US6143584A

    公开(公告)日：2000-11-07

    申请号：US121893

    申请日：1998-07-24

    申请人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

    发明人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

    IPC分类号： G01P15/12 ,  H01L21/00

    CPC分类号： G01P15/123 ,  G01P15/124

    摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.

    摘要翻译： 半导体传感器具有量规电阻。 量规电阻器通过接触孔与铝电极连接，形成桥接电路。 在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。 然后，测量电阻的电阻或桥接电路的输出。 基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

    Semiconductor physical quantity sensor
    6.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号：US06450031B1

    公开(公告)日：2002-09-17

    申请号：US09625860

    申请日：2000-07-26

    申请人： Minekazu Sakai ,  Minoru Murata ,  Seiki Aoyama ,  Youko Nakagawa

    发明人： Minekazu Sakai ,  Minoru Murata ,  Seiki Aoyama ,  Youko Nakagawa

    IPC分类号： G01P1500

    CPC分类号： G01P15/125 ,  B81B3/0086 ,  B81B2201/0235 ,  B81B2203/0109 ,  B81B2203/051 ,  G01P15/0802 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor from which a stable sensor output can be obtained even when the usage environment changes. A silicon thin film is disposed on an insulating film on a supporting substrate, and a bridge structure having a weight part and moving electrodes and cantilever structures having fixed electrodes are formed as separate sections from this silicon thin film. The moving electrodes provided on the weight part and the cantilevered fixed electrodes are disposed facing each other. Slits are formed at root portions of the cantilevered fixed electrodes at the fixed ends thereof, and the width W1 of the root portions is thereby made narrower than the width W2 of the fixed electrodes proper. As a result, the transmission of warp of the supporting substrate to the cantilevered fixed electrodes is suppressed.

    摘要翻译： 一种半导体物理量传感器，即使在使用环境变化的情况下也能够获得稳定的传感器输出。 将硅薄膜设置在支撑基板上的绝缘膜上，并且具有重量部分的电桥结构和具有固定电极的移动电极和悬臂结构形成为与该硅薄膜分开的部分。 设置在重量部分和悬臂固定电极上的移动电极彼此面对地设置。 在悬臂固定电极的固定端的根部处形成狭缝，从而使根部的宽度W1比固定电极本体的宽度W2窄。 结果，抑制了支撑基板的翘曲向悬臂固定电极的传递。

    Semiconductor physical quantity sensor including frame-shaped beam surrounded by groove
    7.
    发明授权
    Semiconductor physical quantity sensor including frame-shaped beam surrounded by groove 有权

    公开(公告)号：US06430999B1

    公开(公告)日：2002-08-13

    申请号：US09818624

    申请日：2001-03-28

    申请人： Minoru Murata ,  Minekazu Sakai

    发明人： Minoru Murata ,  Minekazu Sakai

    IPC分类号： G01P1500

    摘要： A semiconductor physical quantity sensor has a beam connecting a movable portion and a support substrate for displacing the movable portion in a displacement direction. The beam has a rectangular frame shape with a hollow portion and is surrounded by a groove. The groove has opposing intervals at both sides of the beam in the displacement direction, and the opposing intervals are equal to an interval of the hollow portion in the displacement direction. Accordingly, etching rates at the groove and the hollow portion become approximately equal to each other, reducing processing variation of the beam.

    Semiconductor physical quantity sensor
    8.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号：US06250165B1

    公开(公告)日：2001-06-26

    申请号：US09239781

    申请日：1999-01-29

    申请人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

    发明人： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

    IPC分类号： G01L900

    CPC分类号： B81C1/00158 ,  B81C2201/014 ,  G01L9/0042 ,  G01P15/0802 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

    摘要翻译： 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

    Capacitive acceleration sensor
    10.
    发明授权
    Capacitive acceleration sensor 有权
    电容式加速度传感器

    公开(公告)号：US06792805B2

    公开(公告)日：2004-09-21

    申请号：US10369198

    申请日：2003-02-20

    申请人： Minoru Murata ,  Minekazu Sakai

    发明人： Minoru Murata ,  Minekazu Sakai

    IPC分类号： G01P15125

    CPC分类号： G01P15/125 ,  G01P2015/0814

    摘要： A capacitive acceleration sensor includes a supporting substrate, a movable member, and two fixed members. The movable member moves in response to a force that acts on the movable member. Each fixed member is stationary under the force. Two capacitances are formed between the movable member and the fixed members. One of the capacitances increases while the other decreases when the movable member moves in response to the force. The force includes a substantially constant force and a variable force when an acceleration is measured using the sensor. The variable force is proportional to the acceleration. The acceleration is measured on the basis of the difference between the capacitances. The capacitances are different from each other when the force that acts on the movable member is zero to reduce the difference between the capacitances that corresponds to the substantially constant force.

    摘要翻译： 电容式加速度传感器包括支撑基板，可移动部件和两个固定部件。 可移动构件响应于作用在可动构件上的力移动。 每个固定构件在力作用下是静止的。 在可动构件和固定构件之间形成两个电容。 当可动构件响应于力而移动时，电容之一增加而另一个减小。 当使用传感器测量加速度时，该力包括基本恒定的力和可变的力。 可变力与加速度成比例。 基于电容之差测量加速度。 当作用在可动构件上的力为零时，电容彼此不同，以减小对应于基本恒定的力的电容之间的差异。