公开(公告)号：US20030106646A1

公开(公告)日：2003-06-12

申请号：US10106008

申请日：2002-03-21

申请人： Applied Materials, Inc.

发明人： Shawming Ma ,  Mahmoud Dahimene ,  Claes Bjorkman

IPC分类号： C23C016/00 ,  C23F001/00

CPC分类号： H01J37/32623 ,  C23C16/4585 ,  H01J37/32642

摘要： Methods and apparatuses for reducing electrical arcing currents or electron emissions to a wafer or to components in a plasma chamber are provided. An insert for use in a process chamber having a wafer support is disclosed. The insert comprises a composite member formed of a first material, such as for example, silicon, and a second material, such as for example, SiO2, having a greater electrical impedance than the first material. The composite member has a surface which is adapted to be disposed adjacent to the wafer support, and which is made of the second material. In one aspect, the process chamber further has an outer member adapted to surround the wafer support. The composite member has a surface which is adapted to be disposed adjacent to the outer member and which is made of the second material. In another aspect, the composite member has a surface which is adapted to be disposed adjacent to a semiconductor wafer and which is made of the second material.

摘要翻译： 提供了用于降低电弧电流或电子发射到晶片或等离子体室中的组件的方法和装置。 公开了一种用于具有晶片支撑件的处理室中的插入件。 插入件包括由诸如硅的第一材料形成的复合构件和具有比第一材料更大的电阻抗的第二材料，例如SiO 2。 复合构件具有适于邻近晶片支撑件设置并由第二材料制成的表面。 在一个方面，处理室还具有适于包围晶片支撑件的外部构件。 复合构件具有适于邻近外部构件设置并由第二材料制成的表面。 在另一方面，复合构件具有适于邻近半导体晶片设置并由第二材料制成的表面。

公开(公告)号：US20040012041A1

公开(公告)日：2004-01-22

申请号：US10280492

申请日：2002-10-25

申请人： Applied Materials, Inc.

发明人： Lawrence C. West ,  Claes Bjorkman ,  Dan Maydan ,  Samuel Broydo

IPC分类号： H01L021/00

CPC分类号： G02B6/43 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4201 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283

摘要： An optical ready substrate made at least in part of a first semiconductor material and having a front side and a backside, the front side having a top surface that is of sufficient quality to permit microelectronic circuitry to be fabricated thereon using semiconductor fabrication processing techniques. The optical ready substrate includes an optical signal distribution circuit fabricated on the front side of the substrate in a first layer region beneath the top surface of the substrate. The optical signal distribution circuit is made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuitry to be fabricated thereon.

摘要翻译： 至少部分由第一半导体材料制成并且具有前侧和后侧的光学就绪衬底，所述前侧具有足够质量的顶表面，以允许使用半导体制造处理技术在其上制造微电子电路。 光学就绪衬底包括在衬底的顶表面下方的第一层区域中制造在衬底的前侧上的光信号分配电路。 光信号分配电路由互连的半导体光子元件组成，并被设计成向要在其上制造的微电子电路提供信号。

公开(公告)号：US20030038111A1

公开(公告)日：2003-02-27

申请号：US10254969

申请日：2002-09-24

申请人： Applied Materials, Inc.

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： B44C001/22 ,  G01R031/00 ,  C03C025/68

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US20040114853A1

公开(公告)日：2004-06-17

申请号：US10623666

申请日：2003-07-21

申请人： APPLIED MATERIALS, INC.

发明人： Claes Bjorkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

IPC分类号： G02B006/12

CPC分类号： G02B6/43 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4204 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  H01L21/84 ,  H01L27/1203

摘要： An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

摘要翻译： 一种制造方法，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面和 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面具有足以允许在其中形成微电子电路的质量，并且第二区域包括其中形成的光信号分配电路， 所述光信号分配电路由互连的半导体光子元件组成并且被设计成向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US20040013338A1

公开(公告)日：2004-01-22

申请号：US10280505

申请日：2002-10-25

申请人： Applied Materials, Inc.

发明人： Claes Bjorkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

IPC分类号： G02B006/12

CPC分类号： G02B6/12004 ,  G02B6/12 ,  G02B6/30 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  G02B6/43

摘要： An article of manufacture comprising an optical ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

摘要翻译： 一种制品，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面，并且是 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面的质量足以允许在其中形成微电子电路，并且第二区域包括其中形成的光信号分配电路， 光信号分配电路由互连的半导体光子元件组成，并被设计为向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US20030192644A1

公开(公告)日：2003-10-16

申请号：US10442424

申请日：2003-05-20

申请人： Applied Materials, Inc.

发明人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

IPC分类号： H01L021/306 ,  C23C016/00

CPC分类号： H01J37/321

摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

公开(公告)号：US20030037880A1

公开(公告)日：2003-02-27

申请号：US10253496

申请日：2002-09-24

申请人： Applied Materials, Inc.

发明人： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC分类号： C23F001/00 ,  C23C016/00

CPC分类号： H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

摘要翻译： 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US20010054383A1

公开(公告)日：2001-12-27

申请号：US09929902

申请日：2001-08-14

申请人： Applied Materials, Inc.

发明人： Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Kenny Doan ,  Mike Welch ,  Richard Raymond Mett

IPC分类号： H01L021/3065

CPC分类号： H01J37/321

摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

摘要翻译： 用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。 在第一方面，楔形感应线圈阵列分布在一个圆周围。 相邻线圈的侧面是平行的，从而增强阵列产生的磁场的径向均匀性。 在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。 在一个实施例中，一个线圈的热端连接到RF电源的不平衡输出端，另一个线圈的热端通过电容器连接到电接地，电容器以RF的频率与后一个线圈谐振 电源。