公开(公告)号：US20040107907A1

公开(公告)日：2004-06-10

申请号：US10646527

申请日：2003-08-22

申请人： APPLIED MATERIALS, INC.

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： C23C016/00

CPC分类号： H01J37/32082 ,  H01J37/321

摘要： A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.

摘要翻译： 一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸 通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。 外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽 路径延伸穿过管道并跨越过程区域。 反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体 在房间里 该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

公开(公告)号：US20020096259A1

公开(公告)日：2002-07-25

申请号：US10021195

申请日：2001-10-30

申请人： Applied Materials, Inc.

发明人： Kenneth S. Collins ,  Michael Rice ,  Farahmand E. Askarinam ,  Douglas A. Buchberger JR. ,  Craig A. Roderick

IPC分类号： C23F001/02

CPC分类号： H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing RF power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

摘要翻译： 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，以将等离子体源功率电容耦合到腔室中，以及（b）将RF功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

公开(公告)号：US20040200417A1

公开(公告)日：2004-10-14

申请号：US10838052

申请日：2004-05-03

申请人： Applied Materials, Inc.

发明人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： C23C016/00

CPC分类号： H01L21/02274 ,  C23C14/48 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/02126 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  Y10T29/5313

摘要： A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.

摘要翻译： 用于在工件上沉积含有硅，氮，氢或氧中的任何一种的涂层的低温方法包括将工件放置在面向腔室的处理区域的反应器室中，引入含有硅，氮，氢或任何硅， 氧气进入反应器室，通过将RF等离子体源功率施加在大约10MHz量级的HF频率处的RF等离子体源功率在腔室外部的折返导管的一部分上，形成通过处理区域的折返路径中的环形RF等离子体电流，并形成 可折回路径的一部分，将RF等离子体偏置功率施加到工件的一个或几MHz量级的LF频率上，并将工件的温度保持在约100摄氏度。

公开(公告)号：US20020020499A1

公开(公告)日：2002-02-21

申请号：US09970121

申请日：2001-10-02

申请人： Applied Materials, Inc.

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC分类号： C23F001/02

CPC分类号： H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

摘要翻译： 用于RF等离子体反应器的等离子体室外壳结构。 等离子体腔室结构是倒置杯形构造的单壁电介质外壳结构，并且具有延伸到中心位置的气体入口的具有基本平坦的圆锥形构造的内表面的天花板。 等离子体室外壳结构具有侧壁，当定位在反应器基座上时，具有大体横向于基座的下部圆柱形部分，以及在下部圆柱形部分和天花板之间的过渡部分。 过渡部分从下圆柱形部分向内延伸并且包括曲率半径。 所述结构适于覆盖所述基座以包括所述RF等离子体反应器并且限定所述基座上的等离子体处理体积。 该结构由硅，碳化硅，石英和/或氧化铝的电介质材料形成，其能够从相邻天线传输感应电力。

公开(公告)号：US20040190215A1

公开(公告)日：2004-09-30

申请号：US10767792

申请日：2004-01-28

申请人： Applied Materials, Inc.

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02H001/00

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

摘要翻译： 静电卡盘包括电介质构件，其包括（i）包含半导体材料的第一层，和（ii）第一层上的第二层，第二层包括绝缘材料。 绝缘材料具有比半导体材料更高的电阻。 电介质构件中的电极可充电以产生静电力。 卡盘在等离子体工艺中的处理期间用于保持诸如半导体晶片的基板。

公开(公告)号：US20040107906A1

公开(公告)日：2004-06-10

申请号：US10646458

申请日：2003-08-22

申请人： APPLIED MATERIALS, INC.

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： C23C016/00

CPC分类号： H01J37/32082 ,  H01J37/321

摘要： A method for ion planting a species into a surface layer of a workpiece in a chamber, the method includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.

摘要翻译： 一种用于将物种离子种植到室中的工件的表面层的方法，所述方法包括将工件放置在由室侧壁和面向所述工件的腔室顶部和一对端口之间的室的处理区域中 通常在处理区域的相对侧附近，并通过腔室外部的导管连接在一起。 该方法还包括向腔室内引入包括待注入物种的工艺气体，并且还从工艺气体中产生等离子体电流并使等离子体电流在包括导管和处理区域的循环折返路径中振荡。

公开(公告)号：US20040166612A1

公开(公告)日：2004-08-26

申请号：US10786410

申请日：2004-02-24

申请人： Applied Materials, Inc.

发明人： Dan Maydan ,  Randir P.S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L021/00 ,  H01L021/84 ,  H01L021/322

CPC分类号： H01J37/321 ,  H01J2237/0825 ,  Y10S438/977

摘要： A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.

摘要翻译： 在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压， 将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心 并且在硅表面层中具有有限的氧浓度。 然后减小硅表面层中的氧浓度以允许外延硅沉积。

公开(公告)号：US20040149218A1

公开(公告)日：2004-08-05

申请号：US10646612

申请日：2003-08-22

申请人： APPLIED MATERIALS, INC.

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： C23C016/00

CPC分类号： H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

摘要： A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.

摘要翻译： 用于将离子注入工件的表面层的方法包括将工件放置在腔室中的工件支撑件上，其中表面层与腔室的天花板处于面对关系，从而在工件和天花板之间限定处理区域， 并且将包括待植入物种的工艺气体引入到工件的表面层中。 该方法包括通过从RF源功率发生器电容耦合RF源功率跨过工件支撑件和天花板或侧壁来从工艺气体产生等离子体。 该方法还包括将来自RF偏置发生器的RF偏压施加到工件支撑件。

公开(公告)号：US20040107908A1

公开(公告)日：2004-06-10

申请号：US10646528

申请日：2003-08-22

申请人： APPLIED MATERIALS, INC.

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC分类号： C23C016/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure having a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further comprises a source power applicator and an RF plasma source generator coupled to the source power applicator for inductively coupling RF source power into the chamber. A gas distribution apparatus furnishes process gas into the chamber, and a supply of process gas furnishes to the gas distribution apparatus a process gas containing the species. An RF bias generator is connected to the workpiece support pedestal and has an RF bias frequency for establishing an RF bias.

摘要翻译： 用于将物种注入工件的等离子体浸入式离子注入反应器包括具有侧壁和限定腔室的天花板的外壳，以及在腔室内的工件支撑基座，用于支撑具有该物种将被覆盖的表面层的工件 离子植入，工件支撑台座面对天花板的内表面，以便在其间限定大致延伸穿过晶片支撑台座的直径的工艺区域。 反应器还包括源功率施加器和耦合到源功率施加器的RF等离子体源发生器，用于将RF源功率感应耦合到腔室中。 气体分配装置将工艺气体提供到室中，并且向气体分配装置供应处理气体，供给包含该物质的处理气体。 RF偏置发生器连接到工件支撑基座，并具有用于建立RF偏压的RF偏置频率。

公开(公告)号：US20030226641A1

公开(公告)日：2003-12-11

申请号：US10164327

申请日：2002-06-05

申请人： Applied Materials, Inc.

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

IPC分类号： C23F001/00 ,  C23C016/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.

摘要翻译： 描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。 所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。 反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流， 跨越所述处理区域。 磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。