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6 条记录 (耗时 0.014 秒)

    Selective tungsten stud as copper diffusion barrier to silicon contact
    2.
    发明申请
    Selective tungsten stud as copper diffusion barrier to silicon contact 审中-公开
    选择性钨螺柱作为硅接触的铜扩散阻挡层

    公开(公告)号：US20030073304A1

    公开(公告)日：2003-04-17

    申请号：US09981593

    申请日：2001-10-16

    申请人： Applied Materials, Inc.

    发明人： Alfred Mak ,  Jeong Soo Byun ,  Moris Kori

    IPC分类号： H01L021/4763

    CPC分类号： H01L21/76843 ,  H01L21/76802 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76877

    摘要： A method and apparatus for forming a metal interconnect is provided. A tungsten plug is first deposited by selective WCVD within a feature having an aspect ratio of 3:1 or greater to at least partially fill the feature. An IMP barrier layer is next deposited over the tungsten plug. A PVD copper seed layer followed by an ECP copper layer is then deposited over the barrier layer to fill the feature. The tungsten plug has a thickness of about 1,000 to about 5,000 angstroms and fills less than about 50% of the volume of the feature.

    摘要翻译： 提供一种用于形成金属互连的方法和装置。 首先通过选择性WCVD在具有3:1或更大的纵横比的特征中沉积钨塞以至少部分地填充该特征。 接下来，在钨丝塞上沉积IMP阻挡层。 然后将PVD铜种子层和ECP铜层沉积在阻挡层上以填充该特征。 钨插塞具有约1,000至约5,000埃的厚度，并且填充小于该特征体积的约50％。

    Formation of refractory metal nitrides using chemisorption techniques
    3.
    发明申请
    Formation of refractory metal nitrides using chemisorption techniques 审中-公开
    使用化学吸附技术形成难熔金属氮化物

    公开(公告)号：US20030049931A1

    公开(公告)日：2003-03-13

    申请号：US09960469

    申请日：2001-09-19

    申请人： APPLIED MATERIALS, INC.

    发明人： Jeong Soo Byun ,  Lin Yin ,  Frederick C. Wu ,  Ramanujapuram A. Srinivas ,  Avgerinos Gelatos ,  Alfred W. Mak ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha

    IPC分类号： H01L021/4763

    CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/76876

    摘要： Refractory metal nitride layers for integrated circuit fabrication are described. The refractory metal nitride layer may be formed by sequentially chemisorbing alternating monolayers of a nitrogen-containing compound and a refractory metal compound onto a substrate. A composite refractory metal nitride layer is also described. The composite refractory metal nitride layer may be formed by sequentially chemisorbing monolayers of a nitrogen-containing compound and two or more refractory metal compounds onto a substrate.

    摘要翻译： 描述了用于集成电路制造的耐火金属氮化物层。 难熔金属氮化物层可以通过将含氮化合物和难熔金属化合物的单层依次化学吸附到基底上而形成。 还描述了复合耐火金属氮化物层。 复合耐火金属氮化物层可以通过将含氮化合物和两种或更多种难熔金属化合物的单层依次化学吸附在基材上而形成。

    Formation of titanium nitride films using a cyclical deposition process
    5.
    发明申请
    Formation of titanium nitride films using a cyclical deposition process 审中-公开
    使用循环沉积工艺形成氮化钛膜

    公开(公告)号：US20040013803A1

    公开(公告)日：2004-01-22

    申请号：US10321033

    申请日：2002-12-16

    申请人： Applied Materials, Inc.

    发明人： Hua Chung ,  Hongbin Fang ,  Ken K. Lai ,  Jeong Soo Byun ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi ,  Moris Kori ,  Xinliang Lu ,  Ping Jian

    IPC分类号： C23C016/34 ,  B32B009/00

    CPC分类号： C23C16/34 ,  C23C16/45525

    摘要： Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

    摘要翻译： 公开了在衬底上沉积氮化钛（TiN）膜的方法。 氮化钛（TiN）膜可以通过在衬底上交替吸附含钛前体和NH 3气体的循环沉积工艺来形成。 含钛前体和NH 3气体反应以在衬底上形成氮化钛（TiN）层。 氮化钛（TiN）膜与集成电路制造工艺兼容。 在一个集成电路制造工艺中，制造互连结构。 氮化钛膜也可以用作三维电容器结构的电极，例如沟槽电容器和冠状电容器。

    Dual robot processing system
    6.
    发明申请
    Dual robot processing system 失效
    双机器人处理系统

    公开(公告)号：US20030113187A1

    公开(公告)日：2003-06-19

    申请号：US10017039

    申请日：2001-12-14

    申请人： Applied Materials, Inc.

    发明人： Lawrence C. Lei ,  Moris Kori

    IPC分类号： B65G049/07

    CPC分类号： H01L21/67184 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  Y10S414/139

    摘要： A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.

    摘要翻译： 通常提供具有传送室的基板处理系统，该传送室具有两个处理室和与其连接的两个加载锁定室。 传送室包括在中心轴线的任一侧上具有限定在其中的第一传送区域和第二传送区域的主体。 第一通道将负载锁中的一个与第一传送区域耦合，并且第二通道将另一个负载锁与第二传送区域耦合。 第一通道和第二通道围绕中心轴线形成锐角。 传送平台设置在第一传送区域和第二传送区域之间。 第一传送机器人和第二传送机器人分别设置在第一传送区域和第二传送区域中。 每个机器人适于在负载锁，转移平台和处理室之间传送衬底。