公开(公告)号：US20250006552A1

公开(公告)日：2025-01-02

申请号：US18753144

申请日：2024-06-25

Applicant: Applied Materials Inc.

Inventor： Liqi Wu ,  Rongjun Wang ,  Feng Q. Liu ,  Qihao Zhu ,  Jiang Lu ,  David Thompson ,  Xianmin Tang

IPC: H01L21/768 ,  H01L21/3213

Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metallic material after forming a flowable polymer film to protect a substrate surface within a feature. A first metal liner is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first metal liner on the bottom. A portion of the first metal liner is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, the cycle of depositing a metal liner, forming a flowable polymer film, removing a portion of the metal liner, and removing the flowable polymer film is repeated at least once. A metal layer is deposited on the plurality of metal liners (e.g., first metal liner and the second metal liner) and the metal layer is free of seams or voids.

公开(公告)号：US20240052487A1

公开(公告)日：2024-02-15

申请号：US18380803

申请日：2023-10-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45553 ,  H01L21/02175 ,  H01L21/0228 ,  C23C16/45527

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US11515155B2

公开(公告)日：2022-11-29

申请号：US17197866

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US20200335329A1

公开(公告)日：2020-10-22

申请号：US16388543

申请日：2019-04-18

Applicant: Applied Materials, Inc.

Inventor： Jeffery W. Anthis ,  Nicolas Louis Gabriel Breil ,  David Thompson ,  Feng Q. Liu ,  Liqi Wu

IPC: H01L21/02

Abstract: Exemplary methods of forming nickel-containing materials may include forming a layer of a nickel-and-oxygen-containing material overlying a substrate. The nickel-and-oxygen-containing material may be characterized by a carbon content. The methods may also include annealing the nickel-containing material with a carbon-containing precursor at a temperature greater than or about 100° C. The carbon content within the nickel-and-oxygen-containing material may be maintained during the annealing.

公开(公告)号：US20250006555A1

公开(公告)日：2025-01-02

申请号：US18216127

申请日：2023-06-29

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Xinke Wang ,  Liqi Wu ,  Qihao Zhu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thampson

IPC: H01L21/768

Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metal after use of a flowable polymer to protect a substrate surface within a feature. A first metal layer is deposited by physical vapor deposition (PVD). The semiconductor substrate surface is exposed to one or more monomers to form a flowable and flexible polymer film on the first metal layer within the at least one feature. The flowable polymer film forms on the first metal layer on the bottom. The one or more monomers are selected from one or more of amines with bi-functional groups, aldehydes with bi-functional groups, cyanates with bi-functional groups, ketones with bi-functional groups, and alcohols with bi-functional groups. At least a portion of the first metal layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed.

公开(公告)号：US12094785B2

公开(公告)日：2024-09-17

申请号：US17551381

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： Thomas Anthony Empante ,  Avgerinos V. Gelatos ,  Zhibo Yuan ,  Liqi Wu ,  Joung Joo Lee ,  Byunghoon Yoon

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/823814 ,  H01L27/092 ,  H01L21/28518 ,  H01L21/76843

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US20240038859A1

公开(公告)日：2024-02-01

申请号：US18379600

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Wenting Hou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Jianxin Lei ,  Liqi Wu ,  Raymond Hoiman Hung ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L29/417 ,  H01L21/8234 ,  H01L21/285

CPC classification number: H01L29/41791 ,  H01L21/823418 ,  H01L21/28518

Abstract: A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

公开(公告)号：US20230386833A1

公开(公告)日：2023-11-30

申请号：US17824889

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC: H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/0271 ,  C23C14/16 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76816 ,  H01L21/76831

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

公开(公告)号：US20190210061A1

公开(公告)日：2019-07-11

申请号：US16242184

申请日：2019-01-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04

CPC classification number: B05D3/044 ,  B05D1/60 ,  B05D3/0453 ,  C23C16/042 ,  C23C16/45544 ,  C23C16/45563

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US20190157079A1

公开(公告)日：2019-05-23

申请号：US16193594

申请日：2018-11-16

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.