摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
Embodiments of the invention relate to a neuromorphic network for producing spike-timing dependent plasticity. The neuromorphic network includes a plurality of electronic neurons and an interconnect circuit coupled for interconnecting the plurality of electronic neurons. The interconnect circuit includes plural synaptic devices for interconnecting the electronic neurons via axon paths, dendrite paths and membrane paths. Each synaptic device includes a variable state resistor and a transistor device with a gate terminal, a source terminal and a drain terminal, wherein the drain terminal is connected in series with a first terminal of the variable state resistor. The source terminal of the transistor device is connected to an axon path, the gate terminal of the transistor device is connected to a membrane path and a second terminal of the variable state resistor is connected to a dendrite path, such that each synaptic device is coupled between a first axon path and a first dendrite path, and between a first membrane path and said first dendrite path.
摘要:
Embodiments of the invention relate to a neuromorphic network for producing spike-timing dependent plasticity. The neuromorphic network includes a plurality of electronic neurons and an interconnect circuit coupled for interconnecting the plurality of electronic neurons. The interconnect circuit includes plural synaptic devices for interconnecting the electronic neurons via axon paths, dendrite paths and membrane paths. Each synaptic device includes a variable state resistor and a transistor device with a gate terminal, a source terminal and a drain terminal, wherein the drain terminal is connected in series with a first terminal of the variable state resistor. The source terminal of the transistor device is connected to an axon path, the gate terminal of the transistor device is connected to a membrane path and a second terminal of the variable state resistor is connected to a dendrite path, such that each synaptic device is coupled between a first axon path and a first dendrite path, and between a first membrane path and said first dendrite path.
摘要:
A receiver is adapted to receive an input signal having a first voltage swing and to generate an output signal having a second voltage swing, the output signal being indicative of the input signal, the second voltage swing being greater than the first voltage swing. The receiver includes a first sub-rate receiver block and at least a second sub-rate receiver block. A receiver clock is divided into a first sub-rate clock phase and at least a second sub-rate clock phase, the first sub-rate clock phase being used to drive the first sub-rate receiver block and the second sub-rate clock phase being used to drive the second sub-rate receiver block. Each of the first sub-rate receiver block and the second sub-rate receiver block includes at least one gated-diode sense amplifier.
摘要:
A receiver is adapted to receive an input signal having a first voltage swing and to generate an output signal having a second voltage swing, the output signal being indicative of the input signal, the second voltage swing being greater than the first voltage swing. The receiver includes a first sub-rate receiver block and at least a second sub-rate receiver block. A receiver clock is divided into a first sub-rate clock phase and at least a second sub-rate clock phase, the first sub-rate clock phase being used to drive the first sub-rate receiver block and the second sub-rate clock phase being used to drive the second sub-rate receiver block. Each of the first sub-rate receiver block and the second sub-rate receiver block includes at least one gated-diode sense amplifier.
摘要:
Techniques for improved tuning control of varactor circuits are disclosed. For example, an apparatus comprises a plurality of varactors for tuning a frequency value. The plurality of varactors comprises approximately sqrt(2N) varactors, where N is a number of tunings steps and the plurality of varactors are respectively sized as 1x, 2x, 3x, 4x, . . . , approximately sqrt(2N)x, and where x is a unit of capacitance. A given one of the N tuning steps may be represented by more than one combination of varactors. This may be referred to as redundant numbering.
摘要:
PLL (phase locked loop) circuits and methods are provided in which PWM (pulse width modulation) techniques are to achieve continuous fine tuning control of DCO (digitally controlled oscillator) circuits. In general, pulse width modulation techniques are applied to further modulate dithered control signals that are used to enhance the frequency tuning resolution of the DCO such that the dithered control signals are applied to the fractional tracking control port of the DCO for a selected fraction of a full clock signal based pulse width modulation applied.