摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.
摘要:
A receiver is adapted to receive an input signal having a first voltage swing and to generate an output signal having a second voltage swing, the output signal being indicative of the input signal, the second voltage swing being greater than the first voltage swing. The receiver includes a first sub-rate receiver block and at least a second sub-rate receiver block. A receiver clock is divided into a first sub-rate clock phase and at least a second sub-rate clock phase, the first sub-rate clock phase being used to drive the first sub-rate receiver block and the second sub-rate clock phase being used to drive the second sub-rate receiver block. Each of the first sub-rate receiver block and the second sub-rate receiver block includes at least one gated-diode sense amplifier.
摘要:
A receiver is adapted to receive an input signal having a first voltage swing and to generate an output signal having a second voltage swing, the output signal being indicative of the input signal, the second voltage swing being greater than the first voltage swing. The receiver includes a first sub-rate receiver block and at least a second sub-rate receiver block. A receiver clock is divided into a first sub-rate clock phase and at least a second sub-rate clock phase, the first sub-rate clock phase being used to drive the first sub-rate receiver block and the second sub-rate clock phase being used to drive the second sub-rate receiver block. Each of the first sub-rate receiver block and the second sub-rate receiver block includes at least one gated-diode sense amplifier.
摘要:
Embodiments of the present invention provide a device comprising a plurality of phase change memory cells, a word line, and a plurality of bit lines. Each phase change memory cell is coupled to a corresponding transistor. Each transistor is coupled to the word line. Each bit line is coupled to a phase change memory cell of the device. The device further comprises a programming circuit configured to program at least one phase change memory cell to the SET state by selectively applying a two-stage waveform to the word line and the bit lines of the device. In a first stage, a first predetermined low voltage and a first predetermined high voltage are applied at the word line and the bit lines, respectively. In a second stage, a second predetermined high voltage and a predetermined voltage with decreasing amplitude are applied at the word line and the bit lines, respectively.
摘要:
A method and system are disclosed for calibrating a mid-voltage node in an integrated circuit including an input-output circuit having charge-recycling stacked voltage domains including at least first and second voltage domains. In one embodiment, the method comprises transmitting data through the input-output circuit, including transmitting a first portion of the data across the first voltage domain, and transmitting a second portion of the data across the second voltage domain. The method further comprises measuring a specified characteristic of the data transmitted through the input-output circuit; and based on the measured specified characteristic, adjusting a voltage of said mid-voltage node to a defined value. The voltage of the mid-voltage node may be adjusted to accomplish a number of objectives, for example, to achieve a desired trade-off between power and performance, or so that the two voltage domains have the same performance.
摘要:
A method and system are disclosed for calibrating a mid-voltage node in an integrated circuit including an input-output circuit having charge-recycling stacked voltage domains including at least first and second voltage domains. In one embodiment, the method comprises transmitting data through the input-output circuit, including transmitting a first portion of the data across the first voltage domain, and transmitting a second portion of the data across the second voltage domain. The method further comprises measuring a specified characteristic of the data transmitted through the input-output circuit; and based on the measured specified characteristic, adjusting a voltage of said mid-voltage node to a defined value. The voltage of the mid-voltage node may be adjusted to accomplish a number of objectives, for example, to achieve a desired trade-off between power and performance, or so that the two voltage domains have the same performance.
摘要:
A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.