-
公开(公告)号：US5652436A
公开(公告)日：1997-07-29
申请号：US514656
申请日：1995-08-14
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L31/0312
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。
-
公开(公告)号：US5672240A
公开(公告)日：1997-09-30
申请号：US658467
申请日：1996-06-05
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。
-
公开(公告)号：US5506422A
公开(公告)日：1996-04-09
申请号：US348485
申请日：1994-12-02
IPC分类号： C30B29/04 , H01L21/04 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/1079 , H01L29/66045 , H01L29/78 , Y10T428/30
摘要： A junction suitable for incorporation in diamond electronic devices, such as field effect transistors, U-V photodetectors, capacitors, charge-coupled devices, etc., comprising a double layer structure deposited on the semiconducting diamond film of the electronic device, wherein the double layer structure consists of a layer of intrinsic diamond and a layer of a carrier blocking material. The carrier blocking materials is characterized by a band structure discontinuous with that of diamond resulting in the formation of a depletion layer at the interface. A contact is then formed on this double layer structure.
摘要翻译： 包括沉积在电子器件的半导体金刚石膜上的双层结构的金刚石电子器件中诸如场效应晶体管，紫外光电检测器，电容器，电荷耦合器件等的接合点，其中双层结构 由一层本征金刚石和一层载体阻挡材料组成。 载体阻挡材料的特征在于与金刚石不同的带结构，其特征在于在界面处形成耗尽层。 然后在该双层结构上形成接触。
-
公开(公告)号：US5576589A
公开(公告)日：1996-11-19
申请号：US322710
申请日：1994-10-13
IPC分类号： G01N29/00 , H01L41/09 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/17 , H03H9/25 , H03H9/42 , H03H9/72 , H03H9/145 , H01L41/18
CPC分类号： H03H9/02582 , H03H9/0285
摘要： A high frequency Surface Acoustic Wave (SAW) device includes a highly oriented diamond layer adjacent a piezoelectric layer. In one embodiment, laterally spaced apart piezoelectric layers or portions confine propagation of the wave within the diamond layer. Interdigitated electrodes may be provided by electrically conductive metal lines and/or by heavily doped surface portions of the diamond layer. Undesirable reflections may be reduced by providing the piezoelectric layer with opposing ends canted at an angle from orthogonal to the axis of surface acoustic wave propagation. The surface acoustic wave device may be used as a filter, amplifier, convolver, and phase shifter. Methods for making the surface acoustic wave device are also disclosed.
摘要翻译： 高频表面声波（SAW）器件包括邻近压电层的高取向金刚石层。 在一个实施例中，横向间隔开的压电层或部分限制波在金刚石层内的传播。 交叉电极可以由导电金属线和/或通过金刚石层的重掺杂表面部分提供。 可以通过提供具有与正交于表面声波传播的轴线成正角的相对端部的压电层来降低不期望的反射。 声表面波器件可以用作滤波器，放大器，卷积器和移相器。 还公开了制造声表面波装置的方法。
-
公开(公告)号：US5455432A
公开(公告)日：1995-10-03
申请号：US321164
申请日：1994-10-11
CPC分类号： H01L29/1602 , H01L29/1054 , H01L29/765 , H01L29/802 , H01L2924/0002
摘要： A diamond semiconductor device with a carbide interlayer includes a diamond layer having a semiconducting diamond region of first conductivity type therein and an insulated gate structure on a face of the diamond layer. The relatively thin carbide interfacial layer is provided between the insulated gate structure and the diamond layer in order to inhibit the formation of electrically active defects, such as interface states at the face. By inhibiting the formation of interface states at the face, the carbide interfacial layer suppresses parasitic leakage of charge carriers from the diamond layer to the insulated gate structure. The carbide interfacial layer can be intrinsic silicon carbide or an intrinsic refractory metal carbide (e.g., TiC or WC) or the layer can be of opposite conductivity type to thereby form a P--N heterojunction with the diamond layer. The carbide interfacial layer and the insulated gate structure can be used in a variety of diamond electronic devices such as MIS capacitors, enhancement-mode and buried-channel insulated-gate field effect transistors (IGFETs), surface-channel and buried-channel charge-coupled devices (CCDs), detectors, heterojunction devices, and other related field effect devices. Related fabrication methods are also disclosed.
摘要翻译： 具有碳化物中间层的金刚石半导体器件包括其中具有第一导电类型的半导体金刚石区域的金刚石层和在金刚石层的表面上的绝缘栅极结构。 在绝缘栅极结构和金刚石层之间提供相对薄的碳化物界面层，以便抑制电活性缺陷（例如在表面处的界面态）的形成。 通过抑制表面界面态的形成，碳化物界面层抑制电荷载体从金刚石层到绝缘栅极结构的寄生泄漏。 碳化物界面层可以是本征碳化硅或本征难熔金属碳化物（例如TiC或WC），或者该层可以具有相反的导电类型，从而与金刚石层形成P-N异质结。 碳化物界面层和绝缘栅结构可用于各种金刚石电子器件，如MIS电容器，增强型和埋沟通道绝缘栅场效应晶体管（IGFET），表面沟道和掩埋沟道电荷 - 耦合器件（CCD），检测器，异质结器件和其他相关的场效应器件。 还公开了相关的制造方法。
-
公开(公告)号：US5491348A
公开(公告)日：1996-02-13
申请号：US313986
申请日：1994-09-28
IPC分类号： H01L21/314 , H01L21/338 , H01L29/04 , H01L29/16 , H01L29/812
CPC分类号： H01L29/1602 , H01L29/045 , H01L29/812
摘要： A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.
摘要翻译： 在第一半导体金刚石膜上形成源电极，在第二半导体金刚石膜上形成漏电极。 在第一和第二半导体金刚石膜之间放置厚度在10埃至1毫米至10欧姆或更大的电阻之间的高度耐磨的金刚石薄膜。 在耐高压金刚石膜上形成栅电极。 因此，通过这些第一和第二半导体金刚石膜以及高度耐磨的金刚石膜形成沟道区。 所述第一和第二半导体金刚石膜的全部或至少一部分和高度耐金刚石膜由高取向金刚石膜制成，金刚石的（100）或（111）晶面覆盖至少80％的膜表面 ，并且表示晶面取向的欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}满足| DELTAα| <10°，| DELTA beta | <10°，| DELTA gamma | <10°，同时在相邻的晶面之间。
-
7.发明授权Magnetic sensor element using highly-oriented diamond film and magnetic detector 失效磁性传感元件采用高取向金刚石膜和磁性探测器
公开(公告)号：US5424561A
公开(公告)日：1995-06-13
申请号：US305791
申请日：1994-09-08
申请人： Takeshi Tachibana , Kazushi Hayashi , Koji Kobashi , Bradley A. Fox , Jesko A. von Windheim , David L. Dreifus , Brian R. Stoner
发明人： Takeshi Tachibana , Kazushi Hayashi , Koji Kobashi , Bradley A. Fox , Jesko A. von Windheim , David L. Dreifus , Brian R. Stoner
IPC分类号： G01R33/07 , C30B25/02 , C30B29/04 , H01L43/06 , H01L43/10 , H01L27/22 , H01L29/82 , H01L43/00
CPC分类号： H01L43/065
摘要： A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.
摘要翻译： 使用高取向金刚石膜的磁传感器元件包括磁检测部，至少一对主电流电极，用于使主电流流动并在磁检测部产生霍尔电动势，以及检测电极，用于检测所述霍尔电动势 。 所述磁检测部分由化学气相沉积生长的高取向金刚石膜形成，其中至少90％由（100）或（111）晶面构成。 在相邻的晶面之间，表示晶面取向的欧拉角{α，β，γ}的差异{DELTA alpha，DELTAβ，DELTA gamma}同时满足以下关系： DELTA alpha |
-
公开(公告)号：US5371383A
公开(公告)日：1994-12-06
申请号：US62052
申请日：1993-05-14
IPC分类号： C30B29/04 , H01L21/04 , H01L29/10 , H01L29/16 , H01L29/78 , H01L29/786 , H01L31/0312 , H01L29/04 , H01L29/12 , H01L31/036
CPC分类号： H01L29/1602 , H01L29/1079 , H01L29/66045 , H01L29/78 , Y10T428/30
摘要： A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree..
摘要翻译： 根据本发明的金刚石膜FET包括半导体金刚石层，栅极，源极和漏极，其中所述半导体金刚石层包括通过化学气相沉积生长的半导体高取向金刚石膜，并且至少80％的 所述金刚石膜的表面积由（100）或（111）晶面构成，并且欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}代表两者的取向 （100）或（111）晶面，同时满足相邻晶面之间的以下关系：| DELTA alpha |
-
9.发明授权Microelectronic structure having an array of diamond structures on a nondiamond substrate and associated fabrication methods 失效微电子结构在非金刚石衬底上具有金刚石结构阵列，并且具有相关的制造方法
公开(公告)号：US5420443A
公开(公告)日：1995-05-30
申请号：US35643
申请日：1993-03-23
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C23C16/458 , C23C16/50 , C23C16/511 , C30B25/10 , H01L21/205 , H01L21/338
CPC分类号： C23C16/274 , C23C16/02 , C23C16/4581 , C30B25/105
摘要： A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate. A method for fabricating the nondiamond highly oriented textured diamond layer includes carburizing a face of the nondiamond substrate, nucleating the carburized face by electrical bias enhanced nucleation, and selectively growing diamond favoring growth of the (100)-oriented grains.
摘要翻译： 一种微电子结构，包括多个间隔开的金刚石结构，其上可以形成多个半导体器件。 半导体器件包括在每个金刚石结构上的半导体金刚石层。 金刚石结构优选相对于单晶非金刚石基底定向，使得金刚石结构具有用于在其上形成半导体器件的（100）取向的外表面。 微电子结构可以被切割成分立的设备，或者互连的设备，以形成更高功率的设备。 微电子结构的一个实施例包括多个金刚石结构，其中每个金刚石结构由接近单晶质量的高取向纹理金刚石层形成，但能够在单晶非金刚石基底上制造。 用于制造非金刚石高取向纹理金刚石层的方法包括使非金刚石基底的表面渗碳，通过电偏压增强的成核使渗碳表面成核，以及选择性地生长有利于（100）取向晶粒生长的金刚石。
-
10.发明授权Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Y.sub.x O piezoelectric layer device 失效表面声波和使用Zn（1-X）YxO压电层器件的体声波器件
公开(公告)号：US6127768A
公开(公告)日：2000-10-03
申请号：US73995
申请日：1998-05-07
CPC分类号： H03H9/02582 , H03H9/02574 , H03H9/02834
摘要： The SAW device comprises a diamond or quartz substrate as a wave propagation layer, a piezoelectric layer on the wave propagation layer and at least one interdigitated electrode on the piezoelectric layer.
摘要翻译： SAW器件包括作为波传播层的金刚石或石英衬底，波传播层上的压电层和压电层上的至少一个叉指电极。
-
-
-
-
-
-
-
-
-
搜索结果
30 条记录 (耗时 0.031 秒)
