公开(公告)号：US5491348A

公开(公告)日：1996-02-13

申请号：US313986

申请日：1994-09-28

申请人： Hisasi Koyamao ,  Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

发明人： Hisasi Koyamao ,  Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

IPC分类号： H01L21/314 ,  H01L21/338 ,  H01L29/04 ,  H01L29/16 ,  H01L29/812

CPC分类号： H01L29/1602 ,  H01L29/045 ,  H01L29/812

摘要： A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.

摘要翻译： 在第一半导体金刚石膜上形成源电极，在第二半导体金刚石膜上形成漏电极。 在第一和第二半导体金刚石膜之间放置厚度在10埃至1毫米至10欧姆或更大的电阻之间的高度耐磨的金刚石薄膜。 在耐高压金刚石膜上形成栅电极。 因此，通过这些第一和第二半导体金刚石膜以及高度耐磨的金刚石膜形成沟道区。 所述第一和第二半导体金刚石膜的全部或至少一部分和高度耐金刚石膜由高取向金刚石膜制成，金刚石的（100）或（111）晶面覆盖至少80％的膜表面 ，并且表示晶面取向的欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}满足| DELTAα| <10°，| DELTA beta | <10°，| DELTA gamma | <10°，同时在相邻的晶面之间。

公开(公告)号：US5371383A

公开(公告)日：1994-12-06

申请号：US62052

申请日：1993-05-14

申请人： Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

发明人： Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

IPC分类号： C30B29/04 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0312 ,  H01L29/04 ,  H01L29/12 ,  H01L31/036

CPC分类号： H01L29/1602 ,  H01L29/1079 ,  H01L29/66045 ,  H01L29/78 ,  Y10T428/30

摘要： A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree..

摘要翻译： 根据本发明的金刚石膜FET包括半导体金刚石层，栅极，源极和漏极，其中所述半导体金刚石层包括通过化学气相沉积生长的半导体高取向金刚石膜，并且至少80％的 所述金刚石膜的表面积由（100）或（111）晶面构成，并且欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}代表两者的取向 （100）或（111）晶面，同时满足相邻晶面之间的以下关系：| DELTA alpha |

公开(公告)号：US5493131A

公开(公告)日：1996-02-20

申请号：US314548

申请日：1994-09-28

申请人： Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus

发明人： Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus

IPC分类号： H01L21/314 ,  H01L29/04 ,  H01L29/16 ,  H01L29/861

CPC分类号： H01L29/1602 ,  H01L29/045 ,  H01L29/861

摘要： The rectifying element is comprised of two electrodes, an undoped diamond film, and a B-doped p-type diamond film. The diamond films are formed of highly-oriented diamond films, of which at least 80% of the surface area consists of (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of crystal planes, simultaneously satisfy .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree. between adjacent crystal planes. The diamond rectifying element thus constructed have an excellent electrical characteristics, and multiple of the elements can be produced on a large area at low cost. The diamond rectifying elements can be used for heat-resistant and high-power rectifying elements.

摘要翻译： 整流元件由两个电极，未掺杂的金刚石膜和B掺杂的p型金刚石膜组成。 金刚石膜由高度取向的金刚石膜形成，其中至少80％的表面积由（100）或（111）晶面组成，并且欧拉角的差异{DELTAα，DELTAβ，DELTAγ} 表示晶面取向的{α，β，γ}同时满足| DELTA alpha |

公开(公告)号：US5512873A

公开(公告)日：1996-04-30

申请号：US258608

申请日：1994-06-10

申请人： Kimitsugu Saito ,  Koichi Miyata ,  John P. Bade, Jr. ,  Brian R. Stoner ,  Jesko A. von Windheim ,  Scott R. Sahaida

发明人： Kimitsugu Saito ,  Koichi Miyata ,  John P. Bade, Jr. ,  Brian R. Stoner ,  Jesko A. von Windheim ,  Scott R. Sahaida

IPC分类号： G01K7/22 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C30B29/04 ,  H01C7/02 ,  H01C7/04 ,  H01C7/10

CPC分类号： H01C7/028

摘要： The highly-oriented diamond film thermistor has a temperature sensing part formed of a highly-oriented diamond film grown by chemical vapor deposition. This highly-oriented diamond film satisfies the conditions that at least 65% of the film surface area is covered by (100) or (111) planes of diamond and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy conditions, .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree., between adjacent crystal planes.

摘要翻译： 高取向金刚石膜热敏电阻具有由通过化学气相沉积生长的高取向金刚石膜形成的温度感测部。 这种高度取向的金刚石膜满足以下条件：至少65％的膜表面积被金刚石的（100）或（111）平面覆盖，并且欧拉角{α的差异{DELTAα，DELTAβ，DELTAγ} ，β，γ}，它们代表晶面的取向，同时满足条件 DELTA alpha |

公开(公告)号：US5612548A

公开(公告)日：1997-03-18

申请号：US598618

申请日：1996-02-12

申请人： Kimitsugu Saito ,  Koichi Miyata

发明人： Kimitsugu Saito ,  Koichi Miyata

IPC分类号： C30B29/04 ,  H01L33/00 ,  H01L33/02 ,  H01L33/34 ,  H01L33/42 ,  H01L33/44 ,  H01L31/0312

CPC分类号： H01L33/0054 ,  H01L33/025 ,  H01L33/34 ,  H01L33/44

摘要： A diamond light-emitting element capable of intense light emission at low operation voltage. A conductive substrate is disposed on a metallic plate such as copper to form an ohmic contact. A first diamond layer is formed on the conductive substrate. The boron atom concentration in the first diamond layer is 10.sup.19 cm.sup.-3 or higher. A second diamond layer is formed on the first diamond layer. The second diamond layer has a crystal defect density of 10.sup.11 cm.sup.-2 or higher. A second electrode is formed on the second diamond layer. A power supply is connected to the second electrode and the copper plate. When voltage is applied, holes in the first diamond layer recombine with electrons from the second electrode, and hence light emission takes place. The defect levels in the second diamond layer form the recombination centers to achieve high brightness at low operation voltage.

摘要翻译： 能够在低工作电压下强烈发光的金刚石发光元件。 导电基板设置在诸如铜的金属板上以形成欧姆接触。 在导电基板上形成第一金刚石层。 第一金刚石层中的硼原子浓度为1019cm -3以上。 在第一金刚石层上形成第二金刚石层。 第二金刚石层的晶体缺陷密度为1011cm -2以上。 在第二金刚石层上形成第二电极。 电源连接到第二电极和铜板。 当施加电压时，第一金刚石层中的空穴与来自第二电极的电子复合，因此发生发光。 第二金刚石层中的缺陷水平形成复合中心，以在低操作电压下实现高亮度。

公开(公告)号：US5427054A

公开(公告)日：1995-06-27

申请号：US254762

申请日：1994-06-06

申请人： Kimitsugu Saito ,  Koichi Miyata

发明人： Kimitsugu Saito ,  Koichi Miyata

IPC分类号： C23C16/27 ,  C30B25/02 ,  C30B29/04 ,  H01L21/205

CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/278 ,  C30B25/02 ,  C30B29/04

摘要： A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01.ltoreq.[C]/([C]+[O]).ltoreq.0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.

摘要翻译： 形成高品质金刚石膜的方法，其中非金刚石组分和晶体缺陷显着降低。 通过使用源气体的气相合成在金刚石基板上形成金刚石膜，其中源气体中的氧和碳[0]和[C]的原子浓度分别满足0.01≤ C] /（[C] + [O]）

公开(公告)号：US5309000A

公开(公告)日：1994-05-03

申请号：US50614

申请日：1993-04-22

申请人： Kimitsugu Saito ,  Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata

发明人： Kimitsugu Saito ,  Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata

IPC分类号： C30B29/04 ,  H01L21/04 ,  H01L21/28 ,  H01L29/16 ,  H01L29/40 ,  H01L29/45 ,  H01L23/48

CPC分类号： H01L29/1602 ,  H01L21/0415 ,  H01L24/05 ,  H01L29/45 ,  H01L29/66045 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/14

摘要： A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.

摘要翻译： A是金刚石膜上的耐热欧姆电极，包括：p型半导体金刚石膜; 设置在半导体金刚石膜上的掺硼金刚石层; 以及选择性地形成在掺杂硼的金刚石层上的由p型Si制成的电极元件; 其中硼掺杂金刚石层中的硼浓度为1.0×1019至1.8×10 23 cm -3，并且在电极元件中掺杂选自B，Al和Ga中的至少一种杂质，浓度为1.0×10 20 至5.0×1022cm-3。 金刚石膜上的欧姆电极适用于在高温下工作的电子器件。

公开(公告)号：US5442199A

公开(公告)日：1995-08-15

申请号：US62051

申请日：1993-05-14

申请人： Kimitsugu Saito ,  Koichi Miyata ,  Kalyankumar Das

发明人： Kimitsugu Saito ,  Koichi Miyata ,  Kalyankumar Das

IPC分类号： C30B25/02 ,  C30B29/04 ,  H01L21/331 ,  H01L29/04 ,  H01L29/16 ,  H01L29/165 ,  H01L29/267 ,  H01L29/73 ,  H01L29/737 ,  H01L29/161

CPC分类号： H01L29/1602 ,  H01L29/045 ,  H01L29/267

摘要： An undoped highly-oriented diamond film is formed on a single crystalline silicon substrate, a p-type highly-oriented diamond film is formed on the insulating diamond film. An ohmic electrode is formed on said p-type semiconducting diamond film and an ohmic electrode is also formed on a n-type .beta.-SiC layer. The highly-oriented diamond films are grown by chemical vapor deposition and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystals simultaneously satisfy the following relations: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline.5.degree. between adjacent crystal planes. The diamond hetero-junction rectifying element thus made has a high rectification ratio and heat resistance, and is suitable for mass production at low cost and on large scale.

摘要翻译： 在单晶硅衬底上形成未掺杂的高取向金刚石膜，在绝缘金刚石膜上形成p型高取向金刚石膜。 在所述p型半导体金刚石膜上形成欧姆电极，在n型β-SiC层上也形成欧姆电极。 通过化学气相沉积生长高度取向的金刚石膜，并且所述金刚石膜的至少80％的表面积由（100）或（111）晶面组成，并且差异{DELTAα，DELTAβ，DELTAγ 表示晶体取向的欧拉角{α，β，γ}}满足以下关系：| DELTA alpha |

公开(公告)号：US20060032520A1

公开(公告)日：2006-02-16

申请号：US11249444

申请日：2005-10-14

申请人： Yoshihiko Sakashita ,  Katsumi Watanabe ,  Hisanori Oshiba ,  Shogo Sarumaru ,  Yusuke Muraoka ,  Kimitsugu Saito ,  Ikuo Mizobata ,  Ryuji Kitakado

发明人： Yoshihiko Sakashita ,  Katsumi Watanabe ,  Hisanori Oshiba ,  Shogo Sarumaru ,  Yusuke Muraoka ,  Kimitsugu Saito ,  Ikuo Mizobata ,  Ryuji Kitakado

IPC分类号： B08B3/00

CPC分类号： H01L21/67017 ,  B08B7/0021 ,  H01L21/67126 ,  Y10S134/902

摘要： A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member. The fluid discharging means includes a fluid discharging port formed in a certain position of the communicating channel closer to the processing chamber than the sealing portion to discharge the high-pressure fluid.

摘要翻译： 高压处理装置包括：处理容器，其包括形成在其中的处理室，以对处理室中的物体执行一定的处理; 流体供给装置，其将高压流体供给到处理室中; 从处理室排出高压流体的流体排出装置; 搅拌单元，其布置在处理室中并且可操作以通过相对于处理容器的旋转将高压流体流过物体; 形成在所述处理容器中以在所述处理室内部和外部连通的连通通道; 旋转驱动构件，其经由设置在所述连通通道中的轴部联接到所述搅拌单元; 以及密封部，其设置在所述轴部和所述处理容器之间，以将所述处理室与所述旋转驱动构件断开。 流体排出装置包括形成在与密封部分相比更靠近处理室的连通通道的特定位置中以排出高压流体的流体排放口。

公开(公告)号：US5770467A

公开(公告)日：1998-06-23

申请号：US622858

申请日：1996-03-29

申请人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

发明人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

IPC分类号： H01L21/28 ,  H01L21/04 ,  H01L23/14 ,  H01L23/373 ,  H01L21/441

CPC分类号： H01L21/0435 ,  H01L21/043 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10S148/10 ,  Y10S148/148

摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.