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公开(公告)号：US12058933B2
公开(公告)日：2024-08-06
申请号：US18206898
申请日：2023-06-07
Inventor： Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
CPC classification number: H10K85/6572 , H10K71/12 , H10K71/231 , H10K85/654 , H10K85/655 , H10K85/6574 , H10K85/6576
Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.
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公开(公告)号：US20230103045A1
公开(公告)日：2023-03-30
申请号：US17787014
申请日：2021-01-05
Applicant: Corning Incorporated
Inventor： Gabriel Pierce Agnello , Joy Banerjee , Aize Li , Robert George Manley , Huan-Hung Sheng , Siva Venkatachalam
Abstract: Apparatus and method for treating a substrate, for example texturing a substrate. In some embodiments, a masking material is applied to a surface of the substrate in a predetermined pattern, the surface thereafter contacted with an etchant that removes the masking material. Contacting the surface with the etchant produces multiple co-located textures. In other embodiments, the masking step can be eliminated, and the etchant is applied in a predetermined pattern to produce multiple co-located textures. In still other embodiments, the substrate has a chemical composition, and the substrate is exposed to a leachant that leaches at least one constituent of the chemical composition to produce a substrate with a varying chemical composition at the substrate surface.
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公开(公告)号：US11437587B2
公开(公告)日：2022-09-06
申请号：US16695371
申请日：2019-11-26
Applicant: Corning Incorporated , NATIONAL CHIAO TUNG UNIVERSITY
Inventor： Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.
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公开(公告)号：US11158504B2
公开(公告)日：2021-10-26
申请号：US16635056
申请日：2018-07-30
Applicant: Corning Incorporated
Inventor： Karl D Hirschman , Robert George Manley , Tarun Mudgal
IPC: H01L21/02
Abstract: A method of making polycrystalline silicon (p-Si), including: depositing amorphous silicon to produce an amorphous silicon super-mesa; dehydrogenating the amorphous silicon; patterning the super-mesa to produce a patterned substrate; depositing a capping oxide layer on the amorphous silicon on the patterned substrate; heating the capped, patterned substrate to the crystallization temperature of the a-Si; and flash lamp annealing the patterned substrate with a xenon lamp to produce p-Si having at least one super-mesa, and the super-mesa having supersized grains. Also disclosed are p-Si articles and devices incorporating the articles, and an apparatus for making the p-Si articles.
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公开(公告)号：US20170222025A1
公开(公告)日：2017-08-03
申请号：US15502535
申请日：2015-08-07
Applicant: Corning Incorporated
Inventor： James Patrick Hamilton , Robert George Manley , Jonathan Michael Mis , Wanda Janina Walczak
CPC classification number: H01L27/0251 , C03C17/28 , C03C17/30 , C03C2218/111 , C03C2218/365 , H01L21/02118 , H01L23/60 , H01L27/0248 , H01L27/1218
Abstract: Glass substrates comprising an A-side upon which silicon thin film transistor devices can be fabricated and a B-side having a substantially homogeneous organic film thereon are described. The organic film includes a moiety that reduces voltage generation by contact electrification or triboelectrification. Methods of manufacturing the glass substrates and example devices incorporating the glass substrates are also described.
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Patent Agency Ranking
公开(公告)号：US20170207403A1
公开(公告)日：2017-07-20
申请号：US15404714
申请日：2017-01-12
Applicant: Corning Incorporated
Inventor： Darwin Gene Enicks , Mingqian He , Robert George Manley
IPC: H01L51/05 , H01L29/49 , H03K17/041 , H01L29/16
CPC classification number: H01L51/052 , H01L29/1606 , H01L29/4908 , H01L51/0036 , H01L51/004 , H01L51/0043 , H01L51/0047 , H01L51/0554 , H01L51/0558 , H03K17/04106
Abstract: An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.
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公开(公告)号：US20170182744A1
公开(公告)日：2017-06-29
申请号：US15302098
申请日：2015-04-07
Applicant: Corning Incorporated
Inventor： Robert Alan Bellman , Prantik Mazumder , Robert George Manley , Kaveh Adib
CPC classification number: B32B17/06 , B32B3/266 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B17/00 , B32B27/06 , B32B38/0008 , B32B2250/02 , B32B2255/00 , B32B2307/308 , B32B2307/50 , B32B2307/546 , B32B2307/702 , B32B2307/732 , B32B2307/748 , B32B2307/75 , B32B2309/02 , B32B2309/04 , B32B2309/105 , B32B2315/08 , B32B2457/00 , C03C15/00 , H01L21/02043 , H01L21/02079
Abstract: A method of making a device substrate article having a device modified substrate supported on a glass carrier substrate, including: treating at least a portion of the first surface of a device substrate, at least a portion of a first surface of a glass carrier, or a combination thereof, wherein the treating produces a surface having: silicon; oxygen; carbon; and fluorine amounts; and a metal to fluorine ratio as defined herein; contacting the treated surface with an untreated or like-treated counterpart device substrate or glass carrier substrate to form a laminate comprised of the device substrate bonded to the glass carrier substrate; modifying at least a portion of the non-bonded second surface of the device substrate of the laminate with at least one device surface modification treatment; and separating the device substrate having the device modified second surface from the glass carrier substrate.
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公开(公告)号：US20150329415A1
公开(公告)日：2015-11-19
申请号：US14651728
申请日：2013-12-13
Applicant: Robert Alan BELLMAN , Dana Craig BOOKBINDER , Robert George MANLEY , Prantik MAZUMDER , CORNING INCORPORATED
Inventor： Robert Alan Bellman , Dana Craig Bookbinder , Robert George Manley , Prantik Mazumder
CPC classification number: C03C17/30 , B32B7/06 , B32B7/12 , B32B17/06 , B32B37/18 , B32B2255/26 , B32B2307/538 , B32B2307/546 , B32B2315/08 , B32B2551/00 , C03C17/32 , C03C27/10 , C03C2218/328 , Y10T428/24355 , Y10T428/269 , Y10T428/31544 , Y10T428/31612
Abstract: Surface modification layers (30) and associated heat treatments, that may be provided on a sheet (20), a carrier (10), or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract translation: 可以提供在片材（20），载体（10）或两者上的表面改性层（30）和相关的热处理以控制室温范德华力（和/或氢）键合和高温 在薄片和载体之间共价键合。 例如，在真空处理，湿法处理和/或超声波清洗处理中，室温粘合被控制为足以将薄片和载体保持在一起。 同时控制高温共价键，以防止在高温加工过程中薄片和载体之间的永久性结合，并且保持足够的粘结以防止在高温加工过程中的分层。
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9.发明申请METAL-FREE CVD COATING OF GRAPHENE ON GLASS AND OTHER DIELECTRIC SUBSTRATES 有权玻璃和其他介电基板上的金属无金属CVD涂层公开(公告)号：US20150232343A1
公开(公告)日：2015-08-20
申请号：US14182819
申请日：2014-02-18
Applicant: CORNING INCORPORATED
Inventor： Xinyuan Liu , Robert George Manley , Robert Michael Morena , Zhen Song
IPC: C01B31/04
CPC classification number: C23C16/26 , C01B32/182 , C01B32/186 , C03C17/22 , C03C2217/28 , C03C2218/152 , C04B41/85 , C23C16/0227 , C23C16/44 , Y10T428/24975 , Y10T428/25 , Y10T428/265 , Y10T428/30
Abstract: A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
Abstract translation: 一种用于形成石墨烯的无催化剂CVD方法。 该方法包括将衬底放置在反应室内，将衬底加热至600℃至1100℃之间的温度，并将碳前体引入室中以在衬底的表面上形成石墨烯层。 该方法不使用等离子体或金属催化剂来形成石墨烯。
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公开(公告)号：US12275666B2
公开(公告)日：2025-04-15
申请号：US17787014
申请日：2021-01-05
Applicant: Corning Incorporated
Inventor： Gabriel Pierce Agnello , Joy Banerjee , Aize Li , Robert George Manley , Huan-Hung Sheng , Siva Venkatachalam
Abstract: Apparatus and method for treating a substrate, for example texturing a substrate. In some embodiments, a masking material is applied to a surface of the substrate in a predetermined pattern, the surface thereafter contacted with an etchant that removes the masking material. Contacting the surface with the etchant produces multiple co-located textures. In other embodiments, the masking step can be eliminated, and the etchant is applied in a predetermined pattern to produce multiple co-located textures. In still other embodiments, the substrate has a chemical composition, and the substrate is exposed to a leachant that leaches at least one constituent of the chemical composition to produce a substrate with a varying chemical composition at the substrate surface.
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