公开(公告)号：US20070093067A1

公开(公告)日：2007-04-26

申请号：US11256711

申请日：2005-10-24

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  H01L21/6708

Abstract: A method of processing a semiconductor wafer can be used prior to an immersion lithography process. The method includes providing a layer of organic photoresist onto a surface of the semiconductor wafer and removing a portion of the photoresist from an outer edge of the wafer using an edge-bead removal process. The outer edge of the wafer is then cleaned using one or more processes, including a mechanical scrubber/cleaner, mega-sonic power, de-ionized water and/or chemical solution.

Abstract translation: 在浸没光刻工艺之前可以使用半导体晶片的处理方法。 该方法包括在半导体晶片的表面上提供一层有机光致抗蚀剂，并使用边缘珠去除工艺从晶片的外边缘去除一部分光致抗蚀剂。 然后使用一个或多个工艺（包括机械洗涤器/清洁器，超声功率，去离子水和/或化学溶液）清洁晶片的外边缘。

公开(公告)号：US20060141399A1

公开(公告)日：2006-06-29

申请号：US11025538

申请日：2004-12-29

Applicant: Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

Inventor： Ching-Yu Chang ,  Burn Lin ,  Chi-Wen Liu

IPC: G03F7/00

CPC classification number: G03F7/322

Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

公开(公告)号：US20060172520A1

公开(公告)日：2006-08-03

申请号：US11050312

申请日：2005-02-03

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

IPC: H01L21/4763 ,  H01L21/3205

CPC classification number: H01L21/76802 ,  H01L21/31144

Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

公开(公告)号：US20070085034A1

公开(公告)日：2007-04-19

申请号：US11251330

申请日：2005-10-14

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin ,  David Lu

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

公开(公告)号：US20070004182A1

公开(公告)日：2007-01-04

申请号：US11280162

申请日：2005-11-16

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/20 ,  H01L21/36

CPC classification number: G03F7/70925 ,  G03F7/70341 ,  G03F7/70916

Abstract: An immersion lithography system includes an immersion fluid holder for containing an immersion fluid. The system further includes a stage for positioning a resist-coated semiconductor wafer in the immersion fluid holder and a lens proximate to the immersion fluid holder and positionable for projecting an image through the immersion fluid and onto the resist-coated semiconductor wafer. The immersion fluid holder includes a coating configured to reduce contaminate adhesion from contaminates in the immersion fluid.

Abstract translation: 浸没式光刻系统包括用于容纳浸液的浸液流体保持器。 该系统还包括用于将浸渍液体保持器中的抗蚀剂涂覆的半导体晶片定位的台和靠近浸没流体保持器的透镜，并且可定位用于将图像投影通过浸没流体并且涂覆到抗蚀剂涂覆的半导体晶片上。 浸没流体保持器包括被配置为减少污染物从浸渍流体中的污染物粘附的涂层。

公开(公告)号：US09213234B2

公开(公告)日：2015-12-15

申请号：US13486697

申请日：2012-06-01

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/11

CPC classification number: G03F7/16 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11

Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

Abstract translation: 感光材料和形成图案的方法，其包括提供可操作以漂浮到由感光材料形成的层的顶部区域的感光材料的组分的组合物。 在一个实例中，感光层包括具有氟原子的第一组分（例如，氟烷基）。 在形成感光层之后，第一部件漂浮到感光层的顶表面。 此后，对感光层进行图案化。

公开(公告)号：US08908181B2

公开(公告)日：2014-12-09

申请号：US13536855

申请日：2012-06-28

Applicant: Chen-Yu Chen ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chen-Yu Chen ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: G01B11/00

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L21/302 ,  H01L29/0649 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device having an overlay mark over a substrate and a method of adjusting multi-layer overlay alignment using the overlay mark for accuracy are disclosed. The overlay mark includes a first feature in a first layer, having a plurality of first alignment segments substantially parallel to each other extending only along an X direction; a second feature in a second layer over the first layer, having a plurality of second alignment segments substantially parallel to each other extending along a Y direction different from the X direction; and a third feature in a third layer over the second layer, having a plurality of third alignment segments substantially parallel to each other extending along the X direction and a plurality of fourth alignment segments substantially parallel to each other extending along the Y direction.

Abstract translation: 公开了一种在衬底上具有覆盖标记的器件以及使用覆盖标记来精确调整多层覆盖对准的方法。 覆盖标记包括第一层中的第一特征，具有基本上彼此平行的多个第一对准段，其仅沿着X方向延伸; 在第一层上的第二层中的第二特征，具有沿着与X方向不同的Y方向彼此平行的多个第二对准段; 以及在第二层上的第三层中的第三特征，具有沿着X方向彼此基本平行的多个第三对准段和沿Y方向延伸的彼此大致平行的多个第四对准段。

公开(公告)号：US08795540B2

公开(公告)日：2014-08-05

申请号：US13335618

申请日：2011-12-22

Applicant: Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Ming-Feng Shieh ,  Ching-Yu Chang

IPC: C03C15/00 ,  H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/0273

Abstract: A method includes forming a photo resist pattern, and performing a light-exposure on a first portion of the photo resist pattern, wherein a second portion of the photo resist pattern is not exposed to light. A photo-acid reactive material is coated on the first portion and the second portion of the photo resist pattern. The photo-acid reactive material reacts with the photo resist pattern to form a film. Portions of the photo-acid reactive material that do not react with the photo resist pattern are then removed, and the film is left on the photo resist pattern.

Abstract translation: 一种方法包括形成光致抗蚀剂图案，并对光致抗蚀剂图案的第一部分进行曝光，其中光致抗蚀剂图案的第二部分不暴露于光。 在光致抗蚀剂图案的第一部分和第二部分上涂覆光酸反应性材料。 光酸反应性材料与光致抗蚀剂图案反应形成膜。 然后除去与光致抗蚀剂图案不反应的光酸反应性材料的部分，并且将膜留在光致抗蚀剂图案上。

公开(公告)号：US08609325B2

公开(公告)日：2013-12-17

申请号：US12915270

申请日：2010-10-29

Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/2002 ,  G03F7/11 ,  G03F7/16 ,  G03F7/167 ,  G03F7/20

Abstract: A lithography method of manufacturing integrated circuits is disclosed. A photoalignment layer is formed on a substrate. A treatment is performed to reorganize and align the photoalignment molecules. A photoresist layer may be formed on the photoalignment layer in a bi-layer separate coating or with the photoalignment layer in a bound-bind structure.

Abstract translation: 公开了一种制造集成电路的光刻方法。 在基板上形成光取向层。 进行处理以重新组织和对准光对准分子。 光致抗蚀剂层可以形成在双层分离涂层中的光取向层上，或者在结合结合结构中形成在光取向层中。

公开(公告)号：US20130260311A1

公开(公告)日：2013-10-03

申请号：US13437674

申请日：2012-04-02

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/0397 ,  G03F7/2041 ,  G03F7/26 ,  G03F7/325

Abstract: Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.

Abstract translation: 描述了涉及感光材料在负色调显影剂中的溶解度的方法和材料。 感光材料可以包括大于50％的酸不稳定基团作为聚合物链的分支。 在另一个实施方案中，在曝光或照射之后对感光材料进行处理。 示例性的处理包括将基底施加到感光材料上。