摘要:
A structure for resistors and the method for tuning the same. The resistor comprises an electrically conducting region coupled to a liner region. Both the electrically conducting region and the liner region are electrically coupled to first and second contact regions. A voltage difference is applied between the first and second contact regions. As a result, a current flows between the first and second contact regions in the electrically conducting region. The voltage difference and the materials of the electrically conducting region and the liner region are such that electromigration occurs only in the electrically conducting region. As a result, a void region within the electrically conducting region expands in the direction of the flow of the charged particles constituting the current. Because the resistor loses a conducting portion of the electrically conducting region to the void region, the resistance of the resistor is increased (i.e., tuned).
摘要:
The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present invention, the inventive structure includes a semiconductor substrate containing at least a well region; and a buried resistor located in a region of the semiconductor substrate that is beneath said well region. The present invention also provides a method of fabricating such a structure in which a deep ion implantation process is used to form the buried resistor and a shallower ion implantation process is used in forming the well region.
摘要:
Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal pads subtractively or by a damascene process.
摘要:
A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.
摘要:
A structure for resistors and the method for tuning the same. The resistor comprises an electrically conducting region coupled to a liner region. Both the electrically conducting region and the liner region are electrically coupled to first and second contact regions. A voltage difference is applied between the first and second contact regions. As a result, a current flows between the first and second contact regions in the electrically conducting region. The voltage difference and the materials of the electrically conducting region and the liner region are such that electromigration occurs only in the electrically conducting region. As a result, a void region within the electrically conducting region expands in the direction of the flow of the charged particles constituting the current. Because the resistor loses a conducting portion of the electrically conducting region to the void region, the resistance of the resistor is increased (i.e., tuned).
摘要:
Method of fabricating a MIM capacitor and MIM capacitor. The method includes providing a substrate including a dielectric layer formed on a first conductive layer and a second conductive layer formed over the dielectric layer, and patterning a mask on the second conductive layer. Exposed portions of the second conductive layer are removed to form an upper plate of a MIM capacitor having edges substantially aligned with respective edges of the mask. The upper plate is undercut so that edges of the upper plate are located under the mask. Exposed portions of the dielectric layer and the first conductive layer are removed using the mask to form a capacitor dielectric layer and a lower plate of the MIM capacitor having edges substantially aligned with respective edges of the mask.
摘要:
A Metal Insulator-Metal (MIM) capacitor is formed on a semiconductor substrate with a base comprising a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. An ancillary MIM capacitor plate is selected either a lower electrode formed on the STI region in the semiconductor substrate or a doped well formed in the top surface of the semiconductor substrate. A capacitor HiK dielectric layer is formed on or above the MIM capacitor lower plate. A second MIM capacitor plate is formed on the HiK dielectric layer above the MIM capacitor lower plate.
摘要:
Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal pads subtractively or by a damascene process.
摘要:
A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.
摘要:
A BEOL thin-film resistor adapted for flexible integration rests on a first layer of ILD. The thickness of the first layer of ILD and the resistor thickness combine to match the nominal design thickness of vias in the layer of concern. A second layer of ILD matches the resistor thickness and is planarized to the top surface of the resistor. A third layer of ILD has a thickness equal to the nominal value of the interconnections on this layer. Dual damascene interconnection apertures and apertures for making contact with the resistor are formed simultaneously, with the etch stop upper cap layer in the resistor protecting the resistive layer while the vias in the dual damascene apertures are formed.