公开(公告)号：US20220208553A1

公开(公告)日：2022-06-30

申请号：US17559906

申请日：2021-12-22

Applicant: ENTEGRIS, INC.

Inventor： SeungHyun Chae ,  SeongJin Hong ,  Eric Hong ,  Juhee Yeo ,  WonLae Kim ,  JeongYeol Yang

IPC: H01L21/3105 ,  C23F1/30 ,  C23F1/44 ,  C23F11/04

Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

公开(公告)号：US11697767B2

公开(公告)日：2023-07-11

申请号：US17341138

申请日：2021-06-07

Applicant: ENTEGRIS, INC.

Inventor： Steven Michael Bilodeau ,  SeongJin Hong ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Emanuel I. Cooper

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/04 ,  C09K13/00 ,  H01L21/3213 ,  C09K13/08 ,  H01L21/306 ,  C23F1/14

CPC classification number: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C23F1/14 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US20190074188A1

公开(公告)日：2019-03-07

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US20250019590A1

公开(公告)日：2025-01-16

申请号：US18806681

申请日：2024-08-15

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

公开(公告)号：US12152187B2

公开(公告)日：2024-11-26

申请号：US17402126

申请日：2021-08-13

Applicant: ENTEGRIS, INC.

Inventor： Eric Hong ,  SeongJin Hong ,  WonLae Kim ,  JeongYeol Yang ,  SeungHyun Chae ,  JuHee Yeo

IPC: C09K13/08 ,  H01L21/306

Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

公开(公告)号：US20240309272A1

公开(公告)日：2024-09-19

申请号：US18607272

申请日：2024-03-15

Applicant: ENTEGRIS, INC.

Inventor： Juhee Yeo ,  SeongJin Hong ,  WonLae Kim ,  Younghun Park ,  Yeonhui Kang ,  Jinwook Jeong

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: Compositions and methods for selectively etching silicon nitride relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device.

公开(公告)号：US11441229B2

公开(公告)日：2022-09-13

申请号：US16444262

申请日：2019-06-18

Applicant: ENTEGRIS, INC.

Inventor： SeongJin Hong

IPC: C23F1/30 ,  H01L21/4757 ,  H01L21/306 ,  H01L21/3213

Abstract: A method of selectively removing NiPt material from a microelectronic substrate, the method comprising contacting the NiPt material with an aqueous etching composition comprising: an oxidising agent; a strong acid; and a source of chloride.

公开(公告)号：US10651045B2

公开(公告)日：2020-05-12

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  C30B33/10

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US20230383185A1

公开(公告)日：2023-11-30

申请号：US18202007

申请日：2023-05-25

Applicant: ENTEGRIS, INC.

Inventor： JeongYeol Yang ,  Hyungpyo Hong ,  Juhee Yeo ,  SeongJin Hong ,  WonLae Kim

IPC: C09K13/08 ,  C09K15/20

CPC classification number: C09K13/08 ,  C09K15/20

Abstract: Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a high etching rate, and can provide uniform recess top and bottom layers in patterns.

公开(公告)号：US20230030323A1

公开(公告)日：2023-02-02

申请号：US17949956

申请日：2022-09-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.