Abstract:
There is provided a pattern forming method through self-organization of a block copolymer, containing an annealing step after application of a self-organizing composition for forming pattern that contains a block copolymer containing a block having a repeating unit represented by the specific general formula, and contains an organic solvent, to a substrate, and wherein after a microphase-separated structure is formed in the annealing step, one domain thereof is selectively removed to form a pattern.
Abstract:
An organic treatment liquid for patterning a resist film, in which a metal element concentration of each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn is 3 ppm or less and which can reduce generation of particles, in a negative tone pattern forming method for forming a miniaturized (for example, 30 nm node or less) pattern by particularly using an organic developer, a method of producing the organic treatment liquid for patterning a resist film, a storage container of the organic treatment liquid for patterning a resist film, a pattern forming method using the same, and a method of producing an electronic device can be provided.
Abstract:
According to an exemplary embodiment of the present invention, there are provided an organic treatment solution for patterning chemically amplified resist films, an organic treatment solution containing 1 ppm or less of an alkyl olefin having a carbon number of 22 or less and having a metal element concentration of 5 ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn, a pattern formation method, an electronic device manufacturing method, and an electronic device use the same.
Abstract:
The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern.
Abstract:
In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.
Abstract:
A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.
Abstract:
A pattern formation method which includes a process of forming an actinic ray sensitive or radiation sensitive film by coating a substrate with an actinic ray sensitive or radiation sensitive resin composition which contains a resin where the degree of solubility with respect to a developer which includes one or more types of organic solvents decreases due to an effect of an acid, a compound which generates an acid by irradiation with actinic rays or radiation, and a solvent, a process of exposing the actinic ray sensitive or radiation sensitive film via an immersion liquid, a process of heating the actinic ray sensitive or radiation sensitive film, and a process of developing the actinic ray sensitive or radiation sensitive film using the developer which includes an organic solvent in this order, in which a process of cleaning the actinic ray sensitive or radiation sensitive film is included after the film forming process and before the exposing process and/or after the exposing process and before the heating process.
Abstract:
There is disclosed a method for manufacturing an organic processing fluid for patterning of a chemical amplification type resist film, comprising a step of causing a fluid containing an organic solvent to pass through a filtration device having a fluid input portion, a fluid output portion, and a filtration filter film provided in a flow path that connects the fluid input portion and the fluid output portion with each other, wherein an absolute value (|TI−To|) of a difference between a temperature (TI) of the fluid in the fluid input portion and a temperature (To) of the fluid in the fluid output portion is 3° C. or lower, a filtration speed of the fluid in the filtration device is 0.5 L/min/m2 or greater, and a filtration pressure by the fluid in the filtration device is 0.10 MPa or lower.
Abstract translation:公开了一种制造用于图案化化学放大型抗蚀剂膜的有机处理流体的方法,包括使含有有机溶剂的流体通过具有流体输入部分的过滤装置,流体输出部分和 设置在将流体输入部和流体输出部彼此连接的流路中的过滤膜,其中流体中的流体的温度(TI)之间的差的绝对值(| TI-To |) 流体输出部的流体的输入部和温度(To)为3℃以下,过滤装置的流体的过滤速度为0.5L / min / m 2以上,过滤压力 过滤装置中的流体为0.10MPa以下。
Abstract:
A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.
Abstract:
The present invention has an object to provide a pattern peeling method which is excellent in peelability and causes less damage to a substrate, a method for manufacturing an electronic device, including the pattern peeling method, and an electronic device manufactured by the method for manufacturing an electronic device. The present invention includes a resist film forming step of applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film; an exposing step of exposing the resist film; a developing step of developing the exposed resist film using a developing liquid containing an organic solvent to form a negative-type pattern; and a peeling step of peeling the negative-type pattern using the following liquid A or B: A: a liquid containing a sulfoxide compound and/or an amide compound; or B: a liquid containing sulfuric acid and hydrogen peroxide.