公开(公告)号：US10566462B2

公开(公告)日：2020-02-18

申请号：US12512285

申请日：2009-07-30

申请人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/861

摘要： A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.

公开(公告)号：US08809971B2

公开(公告)日：2014-08-19

申请号：US12861153

申请日：2010-08-23

申请人： Hans-Joachim Schulze ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/51 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component comprising a semiconductor body, a channel zone in the semiconductor body, a channel control electrode adjacent to the channel zone, and a dielectric layer between the channel zone and the channel control electrode, wherein the dielectric layer has a relative dielectric constant ∈r with a negative temperature coefficient.

摘要翻译： 一种半导体元件，包括半导体本体，半导体主体中的沟道区，与沟道区相邻的沟道控制电极，以及沟道区和沟道控制电极之间的介电层，其中介电层具有相对介电常数ε r具有负温度系数。

公开(公告)号：US20130341673A1

公开(公告)日：2013-12-26

申请号：US13529166

申请日：2012-06-21

申请人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

发明人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

IPC分类号： H01L29/739

CPC分类号： H03K17/127 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397 ,  H03K3/01 ,  H03K17/66

摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged between the drift region and a first electrode and are each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source region and the body region. A floating parasitic region of the first conductivity type is disposed outside the cell region.

摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一导电类型互补的第二导电类型的第二发射极区域和布置在半导体本体中的第二导电类型的漂移区域。 第一和第二发射极区域布置在漂移区域和第一电极之间并且各自连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区域和身体区域。 第一导电类型的浮置寄生区域设置在单元区域的外部。

公开(公告)号：US08482062B2

公开(公告)日：2013-07-09

申请号：US13610240

申请日：2012-09-11

申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

公开(公告)号：US08461648B2

公开(公告)日：2013-06-11

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/732

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

公开(公告)号：US08334564B2

公开(公告)日：2012-12-18

申请号：US12984253

申请日：2011-01-04

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US20110215858A1

公开(公告)日：2011-09-08

申请号：US12718381

申请日：2010-03-05

申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H03K17/0412 ,  H01L29/739

CPC分类号： H01L29/739 ,  H03K17/0412

摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.

摘要翻译： 公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。

公开(公告)号：US07696600B2

公开(公告)日：2010-04-13

申请号：US11713226

申请日：2007-03-02

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

IPC分类号： H01L29/10 ,  H01L29/72

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。

公开(公告)号：US07541260B2

公开(公告)日：2009-06-02

申请号：US11677430

申请日：2007-02-21

申请人： Frank Pfirsch ,  Walter Rieger

发明人： Frank Pfirsch ,  Walter Rieger

IPC分类号： H01L21/76

CPC分类号： H01L29/0634 ,  H01L29/66727

摘要： A semiconductor structure is formed comprising a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The trenches are filled with semiconductor material. Other embodiments may be described and claimed.

摘要翻译： 形成包括掺杂有交替掺杂剂的多个列的半导体结构。 这些列由沟槽分开，并且掺杂剂在掺杂柱中扩散。 沟槽填充有半导体材料。 可以描述和要求保护其他实施例。

公开(公告)号：US20090130806A1

公开(公告)日：2009-05-21

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/336

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。