公开(公告)号：US07273764B2

公开(公告)日：2007-09-25

申请号：US11028370

申请日：2005-01-03

申请人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

发明人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC分类号： H01L21/00

CPC分类号： B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

摘要： The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

摘要翻译： 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US06936902B2

公开(公告)日：2005-08-30

申请号：US10168584

申请日：2000-12-14

申请人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

发明人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC分类号： B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  H01L29/82

CPC分类号： B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

摘要： A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

摘要翻译： 传感器具有基础晶片，其具有传感器室，与基础晶片的传感器室一体化的至少一个硅基微机械结构，在传感器室的区域中覆盖基础晶片的至少一个覆盖物，所述覆盖物包括： 第一层，其是沉积层并且可蚀刻介质和反应产物，以及作为密封层并位于第一层上方的密封第二层，作为第一层的沉积层在第一层的区域中是可渗透的 传感器室到蚀刻介质和反应产物，用于透过的沉积层具有选自蚀刻开口，多孔区域和两者的结构。

公开(公告)号：US20050230708A1

公开(公告)日：2005-10-20

申请号：US11028370

申请日：2005-01-03

申请人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

发明人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC分类号： B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  C30B1/00

CPC分类号： B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

摘要： The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

摘要翻译： 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US07834409B2

公开(公告)日：2010-11-16

申请号：US11883671

申请日：2006-01-25

申请人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Christoph Schelling ,  Tino Fuchs ,  Christina Leinenbach

发明人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Christoph Schelling ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： G01L9/0073 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  G01L9/0042 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

摘要： A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method.

摘要翻译： 一种具有导电基底的微机械元件，包括至少一个导电层的弹性可偏转隔膜，该导电层设置在基板的前侧，导电层与基板电绝缘，中空空间设置在基板 和隔膜，并且填充有介质，以及多个穿孔，其在隔膜下方穿过基底，穿孔开口提供从基底的背面进入中空空间，使得一定体积的介质 当隔膜偏转时，位于中空空间中的位置可能会改变。 还描述了相应的制造方法。

公开(公告)号：US08963777B2

公开(公告)日：2015-02-24

申请号：US14148185

申请日：2014-01-06

申请人： Frank Reichenbach ,  Pal Orten

发明人： Frank Reichenbach ,  Pal Orten

IPC分类号： G01S3/02 ,  G01S5/10 ,  G01S5/02 ,  G01S11/06 ,  G01S11/14 ,  H04B17/00

CPC分类号： G01S5/10 ,  G01S5/0226 ,  G01S5/0236 ,  G01S5/0289 ,  G01S11/06 ,  G01S11/14 ,  H04B17/26 ,  H04B17/27 ,  H04B17/318

摘要： A method for localizing a node in a wireless network, the method including: receiving location signals transmitted by beacons, the location signals including information about the locations of the respective beacons; detecting the respective received signal strengths of the received location signals; obtaining information about the different signal levels at which the beacons can transmit; studying the received location signals; determining the signal levels used by each of the beacons for the transmission of the location signals, based on the studying of the received signals; calculating a distance to each of the beacons based on the detected signal strengths and the determined signal levels; and localizing the node by means of the received location information and the calculated distances. The invention also relates to a node ant to a wireless network.

摘要翻译： 一种用于定位无线网络中的节点的方法，所述方法包括：接收由信标发送的位置信号，所述位置信号包括关于各个信标的位置的信息; 检测所接收的位置信号的各个接收信号强度; 获得关于信标可以传输的不同信号电平的信息; 研究收到的位置信号; 基于对接收到的信号的研究，确定每个信标用于发送位置信号的信号电平; 基于检测到的信号强度和确定的信号电平计算到每个信标的距离; 并通过所接收的位置信息和计算的距离来定位节点。 本发明还涉及到无线网络的节点。

公开(公告)号：US20140118193A1

公开(公告)日：2014-05-01

申请号：US14148185

申请日：2014-01-06

申请人： Frank Reichenbach ,  Pal Orten

发明人： Frank Reichenbach ,  Pal Orten

IPC分类号： G01S5/10

CPC分类号： G01S5/10 ,  G01S5/0226 ,  G01S5/0236 ,  G01S5/0289 ,  G01S11/06 ,  G01S11/14 ,  H04B17/26 ,  H04B17/27 ,  H04B17/318

摘要： A method for localizing a node in a wireless network, the method including: receiving location signals transmitted by beacons, the location signals including information about the locations of the respective beacons; detecting the respective received signal strengths of the received location signals; obtaining information about the different signal levels at which the beacons can transmit; studying the received location signals; determining the signal levels used by each of the beacons for the transmission of the location signals, based on the studying of the received signals; calculating a distance to each of the beacons based on the detected signal strengths and the determined signal levels; and localizing the node by means of the received location information and the calculated distances. The invention also relates to a node ant to a wireless network.

摘要翻译： 一种用于定位无线网络中的节点的方法，所述方法包括：接收由信标发送的位置信号，所述位置信号包括关于各个信标的位置的信息; 检测所接收的位置信号的各个接收信号强度; 获得关于信标可以传输的不同信号电平的信息; 研究收到的位置信号; 基于对接收到的信号的研究，确定每个信标用于发送位置信号的信号电平; 基于检测到的信号强度和确定的信号电平计算到每个信标的距离; 并通过所接收的位置信息和计算的距离来定位节点。 本发明还涉及到无线网络的节点。

公开(公告)号：US20120091545A1

公开(公告)日：2012-04-19

申请号：US13262905

申请日：2010-04-06

申请人： Frank Reichenbach ,  Arnim Hoechst ,  Thomas Buck

发明人： Frank Reichenbach ,  Arnim Hoechst ,  Thomas Buck

IPC分类号： H01L29/84

CPC分类号： B81B3/0008 ,  B81B2201/0257 ,  H04R19/005 ,  H04R19/016

摘要： A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the deflectable electrode and the counter electrode of the microphone capacitor. In order to not impair the functionality of this semiconductor component, even during overload situations in which contact occurs between the diaphragm and the counter electrode, the deflectable electrode and the counter electrode of the microphone capacitor are counter-doped, at least in places, so that they form a diode in the event of contact. In addition, the polarity of the charging voltage between the deflectable electrode and the counter electrode is such that the diode is switched in the blocking direction.

摘要翻译： 实现具有微机械麦克风结构的半导体部件的简单和成本有效的形式，包括作为麦克风电容器的可偏转电极的声学活动光圈，作为麦克风电容器的对电极的静止的，声学可渗透的反射器，以及用于 在麦克风电容器的可偏转电极和对电极之间施加充电电压。 为了不损害该半导体元件的功能，即使在隔膜和对电极之间发生接触的过载情况下，麦克风电容器的可偏转电极和对电极至少在某些地方相互掺杂 它们在接触的情况下形成二极管。 此外，可偏转电极和对电极之间的充电电压的极性使得二极管在阻挡方向上被切换。

公开(公告)号：US07564033B2

公开(公告)日：2009-07-21

申请号：US10563993

申请日：2005-01-14

申请人： Frank Reichenbach ,  Holger Hoefer

发明人： Frank Reichenbach ,  Holger Hoefer

IPC分类号： G01N21/00 ,  G01J5/04 ,  G01P15/00

CPC分类号： G01N21/3504 ,  G01J1/0204 ,  G01J1/04 ,  G01J5/12 ,  G01N2021/3177 ,  G01P1/023 ,  G01P15/18 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  Y10T29/49002 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The invention relates to a microstructured sensor, having at least one measurement chip in which there is formed a first measurement area having a first measurement structure and a second measurement area having a second measurement structure, the measurement areas being offset to one another in a lateral direction, one cap chip that is fastened in vacuum-tight fashion to the measurement chip in a connecting area, one intermediate space, formed between the measurement chip and the cap chip, that is sealed outwardly by the connecting area and in which the measurement areas are situated, and at least one contact area, formed on the measurement chip, and left exposed by the cap chip, for the contacting of the measurement chip. The sensor can be in particular a gas sensor for measuring a gas concentration, or an acceleration sensor.

摘要翻译： 本发明涉及一种微结构传感器，其具有至少一个测量芯片，其中形成具有第一测量结构的第一测量区域和具有第二测量结构的第二测量区域，测量区域在侧向相互偏移 方向，一个在与测量芯片和盖芯片之间形成的连接区域中的测量芯片以真空密封方式固定的一个盖芯片，其由连接区域向外密封，并且测量区域 并且至少一个接触区域形成在测量芯片上，并且被盖芯片暴露以使测量芯片接触。 传感器可以特别地用于测量气体浓度的气体传感器或加速度传感器。

公开(公告)号：US20080093690A1

公开(公告)日：2008-04-24

申请号：US11974011

申请日：2007-10-10

申请人： Frank Reichenbach ,  Franz Laermer ,  Kersten Kehr ,  Axel Franke ,  Andreas Scheurle

发明人： Frank Reichenbach ,  Franz Laermer ,  Kersten Kehr ,  Axel Franke ,  Andreas Scheurle

IPC分类号： H01L29/84 ,  H01L21/302

CPC分类号： B81C1/00246 ,  B81B2201/0235 ,  B81C2203/0778

摘要： A micromechanical component and a method for manufacturing such a component, the component having a micromechanical structure and an integrated circuit, the micromechanical structure being monolithically integrated into the circuit, the circuit being provided in a circuit area of the substrate, and the micromechanical structure being provided in a sensor area of the substrate, the material of the substrate being provided in the area of a sacrificial layer as well as in the area of a function layer without a transition.

摘要翻译： 一种微机械部件和制造这种部件的方法，所述部件具有微机械结构和集成电路，所述微机械结构单片集成到所述电路中，所述电路设置在所述基板的电路区域中，所述微机械结构为 设置在衬底的传感器区域中，衬底的材料设置在牺牲层的区域中以及在没有转变的功能层的区域中。

公开(公告)号：US08329555B2

公开(公告)日：2012-12-11

申请号：US12734994

申请日：2008-10-20

申请人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Andreas Scheurle

发明人： Frank Reichenbach ,  Franz Laermer ,  Silvia Kronmueller ,  Andreas Scheurle

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： B81C1/00301 ,  B81B2207/095 ,  H01L21/76879 ,  H01L21/76898 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/13025 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.

摘要翻译： 一种用于制造具有至少一个盖的传感器的封盖晶片的方法包括：产生通过晶片延伸的接触通孔，并且在其后随后通过导电材料填充接触通孔。