公开(公告)号：US20180269275A1

公开(公告)日：2018-09-20

申请号：US15463465

申请日：2017-03-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Atsushi Ogino ,  Vikrant Chauhan ,  Kong Boon Yeap ,  Ahmed Hassan

IPC: H01L49/02

CPC classification number: H01L28/88

Abstract: Structures for an on-chip capacitor and methods of forming an on-chip capacitor. A metal terminal is formed that has a side edge. Metal fingers are formed that have a parallel arrangement. Floating islands comprised of a metal are formed and are electrically isolated from the metal fingers. Each of the metal fingers has an end and extends from the side edge of the metal terminal toward the end. Each of the floating islands is arranged in a spaced relationship with the end of a respective one of the metal fingers.

公开(公告)号：US09812324B1

公开(公告)日：2017-11-07

申请号：US15405789

申请日：2017-01-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Zhuang ,  Lars Liebmann ,  Stuart A. Sieg ,  Fee Li Lie ,  Mahender Kumar ,  Shreesh Narasimha ,  Ahmed Hassan ,  Guillaume Bouche ,  Xintuo Dai

IPC: H01L21/02 ,  H01L21/76 ,  H01L21/30 ,  H01L21/027 ,  H01L29/66 ,  H01L27/02 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/308 ,  H01L21/28 ,  H01L21/3065

CPC classification number: H01L27/0207 ,  H01L21/28123 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/76224 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method includes providing a semiconductor structure having a substrate including a longitudinally extending plurality of fins formed thereon. A target layout pattern is determined, which overlays active areas devices disposed on the fins. The target layout pattern includes a first group of sections overlaying devices having more fins than adjacent devices and a second group of sections overlaying devices having less fins than adjacent devices. A first extended exposure pattern is patterned into the structure, and includes extensions that extend sections of the first group toward adjacent sections of the first group. A second extended exposure pattern is patterned into the structure, and includes extensions that extend sections of the second group toward adjacent sections of the second group. Portions of the first and second extended exposure patterns are combined to form a final pattern overlaying the same active areas as the target pattern.

公开(公告)号：US09465907B2

公开(公告)日：2016-10-11

申请号：US14341092

申请日：2014-07-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ahmed Hassan ,  Nader Magdy Hindawy ,  Vikrant Chauhan ,  Jason Eugene Stephens ,  David Pritchard ,  Abbas Guvenilir ,  David E. Brown ,  Terry J. Bordelon, Jr.

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G06F17/5068 ,  G06F17/5072

Abstract: One illustrative method disclosed herein involves, among other things, decomposing an initial circuit layout into first and second mask patterns, for the first mask pattern, identifying a first four-polygon pattern in the first mask pattern that violates a multi-polygon constraint rule, wherein the first four-polygon pattern comprises four polygons positioned side-by-side in the first mask pattern, and recoloring one or two of the polygons in the first four-polygon pattern in the first mask pattern to the second mask pattern to eliminate the first four-polygon pattern from the first mask pattern without introducing any design rule violations in the initial circuit layout.

Abstract translation: 本文公开的一种说明性方法涉及对于第一掩模图案将初始电路布局分解为第一和第二掩模图案，识别违反多边形约束规则的第一掩模图案中的第一四边形图案， 其中所述第一四面体图案包括在所述第一掩模图案中并排定位的四个多边形，以及将所述第一掩模图案中的所述第一四面体图案中的一个或两个多边形重新染色到所述第二掩模图案以消除 在第一掩模图案中的第一四面多边形图案，而不会在初始电路布局中引入任何设计规则违规。

公开(公告)号：US20160026748A1

公开(公告)日：2016-01-28

申请号：US14341092

申请日：2014-07-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ahmed Hassan ,  Nader Magdy Hindawy ,  Vikrant Chauhan ,  Jason Eugene Stephens ,  David Pritchard ,  Abbas Guvenilir ,  David E. Brown ,  Terry J. Bordelon, Jr.

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G06F17/5068 ,  G06F17/5072

Abstract: One illustrative method disclosed herein involves, among other things, decomposing an initial circuit layout into first and second mask patterns, for the first mask pattern, identifying a first four-polygon pattern in the first mask pattern that violates a multi-polygon constraint rule, wherein the first four-polygon pattern comprises four polygons positioned side-by-side in the first mask pattern, and recoloring one or two of the polygons in the first four-polygon pattern in the first mask pattern to the second mask pattern to eliminate the first four-polygon pattern from the first mask pattern without introducing any design rule violations in the initial circuit layout.

Abstract translation: 本文公开的一种说明性方法涉及对于第一掩模图案，将初始电路布局分解为第一和第二掩模图案，识别违反多边形约束规则的第一掩模图案中的第一四边形图案， 其中所述第一四面体图案包括在所述第一掩模图案中并排定位的四个多边形，以及将所述第一掩模图案中的所述第一四面体图案中的一个或两个多边形重新染色到所述第二掩模图案以消除 在第一掩模图案中的第一四面多边形图案，而不会在初始电路布局中引入任何设计规则违规。

公开(公告)号：US20200227350A1

公开(公告)日：2020-07-16

申请号：US16248317

申请日：2019-01-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jaladhi Mehta ,  Brian Greene ,  Daniel J. Dechene ,  Ahmed Hassan

IPC: H01L23/522 ,  H01L49/02 ,  H01L21/76

Abstract: Structures that include a passive device, such as a metal-based resistor, and methods of forming a structure that includes a passive device. The structure includes a semiconductor substrate, an interconnect structure including a passive device, and a dummy fill region arranged between the passive device and the semiconductor substrate. The dummy fill region includes a plurality of shallow trench isolation regions in the semiconductor substrate, a plurality of semiconductor fins, a plurality of source/drain regions in the plurality of semiconductor fins, and a plurality of contacts arranged over the plurality of shallow trench isolation regions.

公开(公告)号：US10217633B2

公开(公告)日：2019-02-26

申请号：US15456757

申请日：2017-03-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Heng Yang ,  Ahmed Hassan ,  Daniel Dechene

IPC: H01L21/76 ,  H01L21/033 ,  H01L21/768

Abstract: A single critical mask process flow and associated structure eliminate the formation of narrow polysilicon defects at the ends of polysilicon gate arrays, and obviate the need to implement complicated ground rules and post-design fill methods to avoid generation of the defects.

公开(公告)号：US10147783B2

公开(公告)日：2018-12-04

申请号：US15463465

申请日：2017-03-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Atsushi Ogino ,  Vikrant Chauhan ,  Kong Boon Yeap ,  Ahmed Hassan

IPC: H01L49/02

Abstract: Structures for an on-chip capacitor and methods of forming an on-chip capacitor. A metal terminal is formed that has a side edge. Metal fingers are formed that have a parallel arrangement. Floating islands comprised of a metal are formed and are electrically isolated from the metal fingers. Each of the metal fingers has an end and extends from the side edge of the metal terminal toward the end. Each of the floating islands is arranged in a spaced relationship with the end of a respective one of the metal fingers.