公开(公告)号：US20250015128A1

公开(公告)日：2025-01-09

申请号：US18894485

申请日：2024-09-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor JAIN ,  Anthony K. STAMPER ,  John J. ELLIS-MONAGHAN ,  Steven M. SHANK ,  Rajendran KRISHNASAMY

IPC: H01L29/06 ,  H01L21/763 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a trap rich isolation region embedded within the bulk substrate; and a heterojunction bipolar transistor above the trap rich isolation region, with its sub-collector region separated by the trap rich isolation region by a layer of the bulk substrate.

公开(公告)号：US20240162345A1

公开(公告)日：2024-05-16

申请号：US17984736

申请日：2022-11-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh M. PANDEY ,  Rajendran KRISHNASAMY ,  Judson R. HOLT ,  Chung Foong TAN

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7823 ,  H01L21/76224 ,  H01L29/401 ,  H01L29/407 ,  H01L29/66681

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a transistor with a metal field plate contact and methods of manufacture. The structure includes: a gate structure on a semiconductor substrate; a shallow trench isolation structure within the semiconductor substrate; and a contact extending from the gate structure and into the shallow trench isolation structure.

公开(公告)号：US20240347528A1

公开(公告)日：2024-10-17

申请号：US18300161

申请日：2023-04-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anindya NATH ,  Rajendran KRISHNASAMY ,  Souvick MITRA ,  Steven M. SHANK ,  Sagar P. KARALKAR

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to silicon control rectifiers and methods of manufacture. A structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; a plurality of shallow trench isolation structures extending into the first well and the second well; and at least one gate structure in the first well which abuts one shallow trench isolation structure of the plurality of shallow trench isolation structures.

公开(公告)号：US20240072184A1

公开(公告)日：2024-02-29

申请号：US17895599

申请日：2022-08-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey HAZBUN ,  John ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI ,  Rajendran KRISHNASAMY

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/18 ,  H01L31/028

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors and methods of manufacture. The structure includes: a trench structure in a semiconductor substrate; at least one fin structure comprising semiconductor material which extends from a bottom of the trench structure; a photodetector material within the trench structure and extends from the at least one fin structure; a first contact connected to and on a first side of the photodetector material; and a second contact connected to the semiconductor substrate on a second side of the photodetector material.

公开(公告)号：US20230420596A1

公开(公告)日：2023-12-28

申请号：US17849285

申请日：2022-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. ELLIS-MONAGHAN ,  Rajendran KRISHNASAMY ,  Siva P. ADUSUMILLI ,  Ramsey HAZBUN

IPC: H01L31/105 ,  H01L31/0288 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/0216

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodetector and methods of manufacture. The structure includes: a photodetector; and a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.

公开(公告)号：US20240282853A1

公开(公告)日：2024-08-22

申请号：US18111995

申请日：2023-02-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani PANDEY ,  Rajendran KRISHNASAMY ,  Chung Foong TAN

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7825 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/66704

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a device with workfunction metal in a drift region and methods of manufacture. The structure includes: a gate structure having at least a first workfunction metal in a channel region and a second workfunction metal, which is different from the first workfunction metal, in a trench in a drift region; and a sidewall spacer adjacent to the gate structure within the trench in the drift region.

公开(公告)号：US20240282847A1

公开(公告)日：2024-08-22

申请号：US18111959

申请日：2023-02-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani PANDEY ,  Sagar Premnath KARALKAR ,  Rajendran KRISHNASAMY ,  Chung Foong TAN

IPC: H01L29/74 ,  H01L29/66

CPC classification number: H01L29/74 ,  H01L29/66363

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high performance silicon controlled rectifier (SCR) devices and methods of manufacture. The structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; and a porous semiconductor region extending in the first well and the second well.

公开(公告)号：US20230299132A1

公开(公告)日：2023-09-21

申请号：US18324637

申请日：2023-05-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor JAIN ,  Anthony K. STAMPER ,  John J. ELLIS-MONAGHAN ,  Steven M. SHANK ,  Rajendran KRISHNASAMY

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/737 ,  H01L21/763 ,  H01L29/165

CPC classification number: H01L29/0642 ,  H01L29/0826 ,  H01L29/66242 ,  H01L29/7371 ,  H01L21/763 ,  H01L29/165

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a trap rich isolation region embedded within the bulk substrate; and a heterojunction bipolar transistor above the trap rich isolation region, with its sub-collector region separated by the trap rich isolation region by a layer of the bulk substrate.

公开(公告)号：US20230290880A1

公开(公告)日：2023-09-14

申请号：US17692218

申请日：2022-03-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anupam DUTTA ,  Vvss Satyasuresh CHOPPALLI ,  Rajendran KRISHNASAMY

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L29/0611

Abstract: According to various embodiments, there is provided a MOSFET device. The MOSFET device may include a substrate; a first doped region disposed in the substrate; a second doped region disposed in the substrate, wherein the first doped region and the second doped region are laterally adjacent to each other; a third doped region disposed in the first doped region; a fourth doped region disposed in the second doped region; a gate disposed on the substrate, over the first and second doped regions, and between the third and fourth doped regions; and at least one high resistance region embedded in at least the second doped region, wherein the first doped region has a first conductivity type, wherein the second doped region, the third doped region, and the fourth doped region have a second conductivity type, wherein the first conductivity type and the second conductivity type are different.

公开(公告)号：US20220115549A1

公开(公告)日：2022-04-14

申请号：US17065862

申请日：2020-10-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Rajendran KRISHNASAMY ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN ,  Ramsey HAZBUN

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.