摘要:
A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers includes a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly, and an X-axis drive control. The top chuck assembly includes a heater and a wafer holder. The X-axis drive control drives horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. A wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is placed upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly and is carried by the X-axis carriage drive to the process zone under the top chuck assembly and the unbonded surface of the carrier wafer is placed in contact with the top chuck assembly. The X-axis drive control initiates horizontal motion of the X-axis carriage drive along the X-axis while heat is applied to the carrier wafer via the heater and while the carrier wafer is held by the top chuck assembly via the wafer holder and thereby causes the device wafer to separate and slide away from the carrier wafer.
摘要:
A device for centering circular wafers includes a support chuck for supporting a circular wafer to be centered upon its top surface, left, right and middle centering linkage rods and a cam plate synchronizing the rectilinear motion of the left, right and middle centering linkage rods. The left centering linkage rod includes a first rotating arm at a first end and rectilinear motion of the left centering linkage rod translates into rotational motion of the first rotating arm. The right centering linkage rod comprises a second rotating arm at a first end, and rectilinear motion of the right centering linkage rod translates into rotational motion of the second rotating arm. The first and second rotating arms are rotatable around an axis perpendicular to the top surface of the support chuck and comprise a curved edge surface configured to roll against the curved edge of the circular wafer. The middle centering linkage rod includes a third alignment arm at a first end. The third alignment arm is placed in contact with the curved edge of the circular wafer and linear motion of the middle centering linkage rod in the Y-direction pushes the third alignment arm and the circular wafer toward or away from the center of the support chuck. The cam plate includes first and second linear cam profiles. The first cam profile provides rectilinear motion for the middle centering linkage rod and the second linear cam profile provides rectilinear motion for the left and right centering linkage rods.
摘要:
A device for locating and engaging a notch on the perimeter of a circular wafer includes a notch locating component and a first plate. The notch locating component is configured to move linearly along a first axis and includes a front elongated component extending along a second axis perpendicular to the first axis and having a front surface, a back surface opposite to the front surface and a first protrusion extending from the front surface of the elongated component. The first protrusion has a shape complementing the shape of a notch formed on the perimeter of a circular wafer. As the notch locating component is driven toward the perimeter of the circular wafer along the first axis, a distance between the back surface of the elongated component and a front surface of the first plate is measured and the value of the measured distance is used to determine engagement of the first protrusion with the notch.
摘要:
A debonder apparatus for debonding two via an adhesive layer combined with a release layer temporary bonded wafers includes a chuck assembly, a flex plate assembly and a contact roller. The chuck assembly includes a chuck and a first wafer holder configured to hold wafers in contact with the top surface of the chuck. The flex plate assembly includes a flex plate and a second wafer holder configured to hold wafers in contact with a first surface of the flex plate. The flex plate comprises a first edge connected to a hinge and a second edge diametrically opposite to the first edge, and the flex plate's first edge is arranged adjacent to a first edge of the chuck and the flex plate is configured to swing around the hinge and to be placed above the top surface of the chuck. The contact roller is arranged adjacent to a second edge of the chuck, which is diametrically opposite to its first edge. A debond drive motor is configured to move the contact roller vertical to the plane of the chuck top surface. In operation, a wafer pair, comprising a carrier wafer stacked upon and being bonded to a device wafer via an adhesive layer and a release layer, is placed upon the chuck so that the ubonded surface of the device wafer is in contact with the chuck top surface. Next, the flex plate swings around the hinge and is placed above the bottom chuck so that its first surface is in contact with the unbonded surface of the carrier wafer. Next, the contact roller is driven upward until it contacts and pushes the second edge of the flex plate up while the carrier wafer is held by the flex plate and the device wafer is held by the chuck via the second and first wafer holders, respectively. The contact roller push flexes the second edge of the flex plate and causes delamination of the wafer pair along the release layer.
摘要:
A system for mechanically holding a substrate during processing includes a closeable processing chamber and an upper block assembly located inside the processing chamber and configured to hold a wafer via three mechanical holding assemblies. The three mechanical holding assemblies protrude above a cover of the wafer processing chamber and are configured to hold the wafer at an edge of the wafer and to be adjusted from outside of the processing chamber. Two of the mechanical holding assemblies are lockable in position relative to the wafer edge and one of the mechanical holding assemblies is configured to maintain a hold preload on the wafer edge via a preload mechanism.
摘要:
A method for debonding two temporary bonded wafers, includes providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. Next, loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly. Next, driving the X-axis carriage drive and the bottom chuck assembly to the process zone under the top chuck assembly. Next, placing the unbonded surface of the carrier wafer in contact with the top chuck assembly and holding the carrier wafer by the top chuck assembly. Next, initiating horizontal motion of the X-axis carriage drive while heat is applied to the carrier wafer and while the carrier wafer is held by the top chuck assembly.
摘要:
A wafer bonder apparatus, includes a lower chuck, an upper chuck, a process chamber and three adjustment mechanisms. The three adjustment mechanisms are arranged around a top lid spaced apart from each other and are located outside of the process chamber. Each adjustment mechanism includes a component for sensing contact to the upper chuck, a component for adjusting the pre-load force of the upper chuck, and a component for leveling the upper chuck.
摘要:
An improved apparatus for positioning and aligning a patterned surface of a semiconductor structure directly opposite to solder filled patterned mold cavities of a mold structure includes a pattern based alignment too including means for identifying a mold training pattern image and a semiconductor training pattern image on a training mold structure and a training semiconductor structure, respectively, means for training the alignment tool with the training pattern images, means for storing the alignment tool trained position, means for identifying a mold pattern image and a semiconductor pattern image on the mold structure and the semiconductor structure matching the mold training pattern image and the semiconductor training pattern image, respectively, and means for aligning the identified mold pattern image with the semiconductor pattern image
摘要:
An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination of an adhesive layer with a release layer bonding and a combination of a UV-light curable adhesive layer with a laser absorbing release layer bonding. The debonder cluster includes a thermal slide debonder, a mechanical debonder and a radiation debonder.
摘要:
An improved apparatus for bonding semiconductor structures includes equipment for treating a first surface of a first semiconductor structure and a first surface of a second semiconductor structure with formic acid, equipment for positioning the first surface of the first semiconductor structure directly opposite and in contact with the first surface of the second semiconductor structure and equipment for forming a bond interface between the treated first surfaces of the first and second semiconductor structures by pressing the first and second semiconductor structures together. The equipment for treating the surfaces of the first and second semiconductor structures with formic acid includes a sealed tank filled partially with liquid formic acid and partially with formic acid vapor. Opening an inlet valve connects the tank to a nitrogen gas source and allows nitrogen gas to flow through the tank. Opening an outlet valve allows a mixture of formic acid vapor with nitrogen gas to flow out of the tank. The mixture is used for treating the surfaces of the first and second semiconductor structures.