Angular velocity sensor with built-in limit stops
    2.
    发明授权
    Angular velocity sensor with built-in limit stops 失效
    角速度传感器,内置限位件

    公开(公告)号:US5721377A

    公开(公告)日:1998-02-24

    申请号:US681243

    申请日:1996-07-22

    IPC分类号: G01C19/56 G01P9/04

    CPC分类号: G01C19/5712 G01P2015/0814

    摘要: In an angular velocity sensor, an acceleration sensor is arranged on a resonator formed of a multilayer substrate and attached to a resonating bar. The multilayer substrate includes a top silicon layer, an insulating sacrificial layer arranged below the top silicon layer, and a bottom silicon layer arranged below the insulating sacrificial layer. An excitor causes the resonator to vibrate while a limit stop, configured out of the multilayer substrate, limits the movement of the resonator.

    摘要翻译: 在角速度传感器中,加速度传感器布置在由多层基板形成并且附接到谐振杆的谐振器上。 多层基板包括顶部硅层,布置在顶部硅层下方的绝缘牺牲层和布置在绝缘牺牲层下方的底部硅层。 激励器使谐振器振动,而由多层基板构成的极限停止限制了谐振器的移动。

    Device made of single-crystal silicon
    6.
    发明授权
    Device made of single-crystal silicon 有权
    单晶硅器件

    公开(公告)号:US07834452B2

    公开(公告)日:2010-11-16

    申请号:US12215655

    申请日:2008-06-27

    IPC分类号: H01L21/00

    摘要: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

    摘要翻译: 由单晶硅制成的器件,其具有第一侧,与第一侧相对的第二侧,以及从第一侧延伸到第二侧的第三侧,第一侧和第二侧各自延伸 单晶硅的100平面,第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外,描述了用于制造由单晶硅制成的器件的制造方法。

    Method for manufacturing semiconductor components having micromechanical structures
    7.
    发明授权
    Method for manufacturing semiconductor components having micromechanical structures 失效
    制造具有微机械结构的半导体部件的方法

    公开(公告)号:US06204086B1

    公开(公告)日:2001-03-20

    申请号:US09038777

    申请日:1998-03-11

    IPC分类号: H01L2100

    摘要: A method for manufacturing semiconductor components having micromechanical structures, micromechanical structures being patterned in a wafer for detecting a physical quantity acting on micromechanical structures, and semiconductor components for converting the physical quantity into an electrical signal proportional to the physical quantity being produced. The semiconductor components and the micromechanical structures are defined in a self-aligning manner by process steps acting on one side of the wafer to produce semiconductor components.

    摘要翻译: 一种用于制造具有微机械结构的半导体部件的方法,在用于检测作用在微机械结构上的物理量的晶片中图案化的微机械结构以及用于将物理量转换成与正在产生的物理量成比例的电信号的半导体部件。 半导体部件和微机械结构通过作用于晶片一侧的工艺步骤以自对准的方式限定,以制造半导体部件。

    Semiconductor sensor having a protective layer
    8.
    发明授权
    Semiconductor sensor having a protective layer 失效
    具有保护层的半导体传感器

    公开(公告)号:US5629538A

    公开(公告)日:1997-05-13

    申请号:US433576

    申请日:1995-05-03

    摘要: A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.

    摘要翻译: 优选地设计为压力传感器的半导体芯片在其后侧具有一个或多个凹陷,其中通过相应设计的隔膜耦合压敏电阻来测量压力。 凹部的表面和可选地,半导体芯片的后侧涂覆有保护层,其保护半导体免受侵蚀性介质的侵害。 因此,保护​​层使得可以将传感器普遍用于酸,碱液或热气体中。

    Device made of single-crystal silicon
    10.
    发明授权
    Device made of single-crystal silicon 有权
    单晶硅器件

    公开(公告)号:US08298962B2

    公开(公告)日:2012-10-30

    申请号:US12892008

    申请日:2010-09-28

    摘要: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

    摘要翻译: 由单晶硅制成的器件,其具有第一侧,与第一侧相对的第二侧,以及从第一侧延伸到第二侧的第三侧,第一侧和第二侧各自延伸 单晶硅的100平面,第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外,描述了用于制造由单晶硅制成的器件的制造方法。