摘要:
In a method for dicing multi-layer composite wafers, proceeding from an upper side of the wafer, cuts are introduced into an upper layer of the wafer and, proceeding from a lower side of the wafer, cuts are introduced into a lower layer of the wafer.
摘要:
In an angular velocity sensor, an acceleration sensor is arranged on a resonator formed of a multilayer substrate and attached to a resonating bar. The multilayer substrate includes a top silicon layer, an insulating sacrificial layer arranged below the top silicon layer, and a bottom silicon layer arranged below the insulating sacrificial layer. An excitor causes the resonator to vibrate while a limit stop, configured out of the multilayer substrate, limits the movement of the resonator.
摘要:
A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.
摘要:
A housing for an electronic component has a bottom part, a wall part, a cover part which together are adapted to cover the electronic component, a contact spring provided on the cover part for producing an electrical connection with a terminal of the component, the cover part and the contact spring being formed as a one-piece integral element.
摘要:
A wafer stack with sensor elements hermetically sealed in caverns and a method of fabricating the sensors permitting a reduction in the size of the sensors formed after cutting the wafer stack and also yielding considerable savings in chip area in the manufacture of the wafer stack. The wafer stack includes bonding strips arranged between the individual sensor elements. The wafer stack is diced to form individual sensors by sawing in the middle through the bonding strips.
摘要:
A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要:
A method for manufacturing semiconductor components having micromechanical structures, micromechanical structures being patterned in a wafer for detecting a physical quantity acting on micromechanical structures, and semiconductor components for converting the physical quantity into an electrical signal proportional to the physical quantity being produced. The semiconductor components and the micromechanical structures are defined in a self-aligning manner by process steps acting on one side of the wafer to produce semiconductor components.
摘要:
A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.
摘要:
A sintering furnace for sintering magnetic-ceramic articles is in the form of a quick-firing carriage furnace having a cooling system for indirect cooling in a cooling zone, having a sluice chamber at its outlet-end and being gastight at its base.
摘要:
A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.