INTEGRATED COOLING MODULES OF POWER SEMICONDUCTOR DEVICE
    9.
    发明申请
    INTEGRATED COOLING MODULES OF POWER SEMICONDUCTOR DEVICE 审中-公开
    功率半导体器件的集成冷却模块

    公开(公告)号:US20140291832A1

    公开(公告)日:2014-10-02

    申请号:US13852141

    申请日:2013-03-28

    Abstract: A semiconductor module is disclosed having at least one power semiconductor device, wherein the at least one power semiconductor device has first and second planar sides; a first thermally conductive substrate in thermal contact with the first planar side of the power semiconductor device; a first cooling module defining a first cavity, the first cavity in thermal contact with the first thermally conductive substrate, and the first cooling module in mechanical connection with the first thermally conductive substrate; a first inlet provided in the first cavity for receiving a coolant; a first outlet provided in the first cavity for discharging said coolant; wherein the power semiconductor device is in coolant-proof isolation from the cavity.

    Abstract translation: 公开了具有至少一个功率半导体器件的半导体模块,其中所述至少一个功率半导体器件具有第一和第二平面侧; 与功率半导体器件的第一平面侧热接触的第一导热衬底; 限定第一腔的第一冷却模块,与第一导热衬底热接触的第一空腔,以及与第一导热衬底机械连接的第一冷却模块; 设置在所述第一腔中的用于接收冷却剂的第一入口; 第一出口,设置在所述第一腔中,用于排出所述冷却剂; 其中所述功率半导体器件处于与所述空腔隔离的冷却剂隔离中。

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